• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.122-122
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• 1999

Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• Journal of the Korea Society for Simulation
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• v.17 no.4
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• pp.199-208
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• 2008

Lately, since Complementary Metal Oxide Semiconductor(CMOS) image sensor system has low power, low cost and been miniaturized, hardware and applied software studies using these strengths are being carrying on actively. However, the products equipped with CMOS image sensor based polling method yet has several problems in degree of completeness of applied software and firmware, compared with hardware’s. CMOS image sensor system has an ineffective synchronous problem due to superfluous message exchange. Also when a sending of data is delayed continually, overhead of re-sending is large. So because of these, it has a problem in structural stability according to Polling Method. In this study, polling cycle was subdivided in high-speed synchronization method of firmware -based through MCU and synchronization method of Stepwise was proposed. Also, re-connection and data sending were advanced more efficiently by using interrupt way. In conclusion, the proposed method showed more than 20 times better performance in synchronization time and error connection. Also, a board was created by using C328R board of CMOS image sensor-based and ATmega128L which has low power, MCU and camera modules of proposed firmware were compared with provided software and analyzed in synchronization time and error connection.

• Journal of the Korean Society for Railway
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• v.19 no.5
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• pp.617-628
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• 2016

This paper proposes the structure of a smart transformer to improve the performance of the 60Hz main power transformer for rolling stock. The proposed smart transformer is a kind of solid state transformer that consists of semiconductor switching devices and high frequency transformers. This smart transformer would have smaller size than the conventional 60Hz main transformer for rolling stock, making it possible to operate AC electrified track efficiently by power factor control. The proposed structure employs a cascade H-Bridge converter to interface with the high voltage AC single phase grid as the rectifier part. Each H-Bridge converter in the rectifier part is connected by a Dual-Active-Bridge (DAB) converter to generate an isolated low voltage DC output source of the system. Because the AC voltage in the train system is a kind of medium voltage, the number of the modules would be several tens. To control the entire smart transformer, the inner DC voltage of the modules, the AC input current, and the output DC voltage must be controlled instantaneously. In this paper, a control algorithm to operate the proposed structure is suggested and confirmed through computer simulation.

• Journal of Oral Medicine and Pain
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• v.19 no.1
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• pp.73-91
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• 1994

The author used rabbits in order to examine the effect of Ga-As low power generating semiconductor laser on artificially produced injuries of experimental animals. Artificially produced injuries include surgical wound of 3mm length, 2mm depth in size on ventral skin surface of rabbit and buccal mucosa, and electrical injury formed on opposite side of skin and buccal mucosa by electrical cauterization of same length and depth, and chemical injury formed by FC(Formocresol) solution applied on the anterior dorsal part of tongue. And then, on the experimental group, Ga-As laser was irradiated beginning on the day after the wound formation and continued to irradiate every each other day for five minutes. After1, 3, 6, 9, 13th day, certain number of animals of control and experimental group were sacrified, and wound site tissue was excised to make samples and was observed under light microscope. The following is the conclusions after comparing the healing procedure of experimental and control group. The following results were obtained : 1. Inflammation was decreased more rapidly in the experimental group than the control group. 2. In the surgical, the electrical and the chemical injuries in the oral mucosa, re-epithelialization was completed more rapidly in the experimental group than the control group. In the electrical injury on the skin, re-epithelialization was completed about 6 days after wound formation on both groups. 3. In the electrical and the surgical injuries on the oral mucosa, granulation tissue formation started at 3 days after injury on both groups, but in the chemical injury, it was completed about 3 days faster in the control group than the experimental group. In the surgical wound on the skin, it was completed about 9 days after injury, but faster in the experimental group. In the electrical injury on the skin, it was faster in the control group than the experimental group. 4. In the electrical and the surgical injuries on the oral mucosa, fibrosis was started at 6~9 days after injury on both groups, but regeneration of connective tissue in the experimental group was observed much more than the control group. 5. When comparing the effect of wound healing on skin and oral mucosa of control and experimental group, granulation tissue formation and re-epithelialization in the oral mucosa was more vigorous. In conclusion, the difference of timing and the sequence of wound healing process(inflammation, re-epithelialization, granulation tissue formation, fibrosis) following Laser irradiation between control and experimental group was not observed, but the healing tissue was observed much more in the Laser irradiated group.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.7
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• pp.1777-1783
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• 2014

In this paper, we designed and fabricated a high-speed semiconductor sensor for use in power control devices and analyzed the characteristics with pulsed radiation tests. At first, radiation sensitive circular Si PIN diodes with various diameters(0.1 mm ~5.0 mm) were designed and fabricated using Si epitaxial wafer, which has a $42{\mu}m$ thick intrinsic layer. The reverse leakage current of the diode with a radius of 2 mm at a reverse bias of 30 V was about 20.4 nA. To investigate the characteristic responses of the developed diodes, the pulsed gamma-radiation tests were performed with the intensity of 4.88E8 rad(Si)/sec. From the test results showing that the output currents and the rising speeds have a linear relationship with the area of the sensors, we decided that the optimal condition took place at a 2 mm diameter. Next, for the selected 2 mm diodes, dose rate tests with a range of 2.47E8 rad(Si)/sec to 6.21E8 rad(Si)/sec were performed. From the results, which showed linear characteristics with the radiation intensity, a large amount of photocurrent over 60mA, and a high speed response under 350ns without saturation, we can conclude that the our developed PIN diode can be a good candidate for the sensor of power control devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.3
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• pp.96-102
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• 2020

In this paper, AlN epilayers on 6H-SiC (0001) substrate are grown by mixed source hydride vapor phase epitaxy (MS-HVPE). AlN epilayer of 0.5 ㎛ thickness was obtained with a growth rate of 5 nm per hour. The surface of AlN epilayer grown on 6H-SiC (0001) substrate was investigated by field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDS). Dislocation density was considered through HR-XRD and related calculations. A fine crystalline AlN epilayer with screw dislocation density of 1.4 × 10⁹ cm^-2 and edge dislocation density of 3.8 × 10⁹ cm^-2 was confirmed. The AlN epilayer on 6H-SiC (0001) substrate grown by using the mixed source HVPE method could be applied to power devices.

• Journal of Biomedical Engineering Research
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• v.20 no.1
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• pp.81-90
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• 1999

This paper describes an EEG(electroencephalogram) software for two-channel cerebral function monitoring system to detect the cerebral ischemia. In the software, two-channel bipolar analog EEG signals are digitized and from the signals various EEG parameters are extracted and displayed on a monitor in real-time. Digitized EEG signal is transformed by FFT(Fast Fourier transform) and represented as CSA(compressed spectral array) and DSA(density spectral array). Additional 5 parameters, such as alpha ratio, percent delta, spectral edge frequency, total power, and difference in total power, are estimated using the FFT spectra. All of these are effectively merged in a monitor and displayed in real-time. Through animal experiments and clinical trials on men, the software is modified and enhanced. Since the software provides raw EEG, CSA, DSA, simultaneously with additional 5 parameters in a monitor, it is possible to observe patients multilaterally. For easy comparison of patient's status, reference patterns of CSA, DSA can be captured and displayed on top of the monitor. And user can mark events of surgical operation and patient's conditions on the software, this allow him jump to the points of events directly, when reviewing the recorded EEG file afterwards. Other functions, such as forward/backward jump, gain control, file management are equipped and these are operated by simple mouse click. Clinical tests in a university hospital show that the software responds accurately according to the conditions of patients and medical doctors can use the software easily.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.49-53
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• 2017

We study on the change of electrical properties of two-dimensional (2D) $SnSe_2$ materials with respect to Cl doping as $SnSe_{1.994}Cl_{0.006}$ under a high temperature condition. (300~450 K) By the simple solid-state reaction method, non-and Cl-doped 2D $SnSe_2$ materials are successfully synthesized with negligible impurities as confirmed by X-ray diffraction. From the temperature dependence of resistivity, it is observed that the conduction mechanism is changed from hopping to degenerate conduction with Cl doping. By Hall effect measurement, an increase on electron carrier concentration from ${\sim}7{\times}10^{16}$ to ${\sim}3{\times}10^{18}cm^{-3}$ with Cl doping verifies that Cl is an effective electron donor which results in the encouraged carrier concentration. Detailed analysis for temperature dependent Hall mobility reveals that the electrical transports in high temperature regime are governed by the grain boundary-controlled mechanism for non-doped $SnSe_2$, which is effectively suppressed by Cl-doping as entering metallic transport regime.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.2
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• pp.979-984
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• 2011

Although sludge production has been increased due to the number of the wastewater treatment plants expanded, needs of the techniques for the sludge reduction and disposal has been issued importantly because the sludge dumping to ocean is prohibited from 2012 by the London Dumping Convention. Therefore, the sludge solubilization using electrolysis as an alternative techniques for the sludge disposal was carried out in this study. Iridium coated titanium based insoluble electrodes were used and 20 volt was applied to the electrolysis reactor using DC power supply. Supernatants of the treated sludge was monitored: The soluble COD, TN, TP of it was increased to 151%, 22% and 6% respectively. And the sludge floc size distribution was changed, that is, the flocs ranged from 0.1 to 1.0 ${\mu}m$ were increased. All of these results indicate that the cells were lysed and the internal matters bursted out of the cell after electrolysis. As well as the reduction of the sludge production, the soluble organic matters from the cells could be used as an external carbon sources in the advanced wastewater treatment plants.