• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.211-215
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• 2013

Partial discharge diagnosis techniques using ultra high frequencies do not affect load movement, because there is no interruption of power. Consequently, these techniques are popular among the prevention diagnosis methods. For the first time, this measurement technique has been applied to the GIS, and has been tested by applying an extra high voltage switchboard. This particular technique makes it easy to measure in the live state, and is not affected by the noise generated by analyzing the causes of faults ? thereby making risk analysis possible. It is reported that the analysis data and the evaluation of the risk level are improved, especially for poor location, and that the measurement of Ultra high frequency (UHF) partial discharge of the real live wire in industrial switchgear is spectacular. Partial discharge diagnosis techniques by using the Ultra High Frequency sensor have been recently highlighted, and it is verified by applying them to the GIS. This has become one of the new and various power equipment techniques. Diagnosis using a UHF sensor is easy to measure, and waveform analysis is already standardized, due to numerous past case experiments. This technique is currently active in research and development, and commercialization is becoming a reality. Another aspect of this technique is that it can determine the occurrences and types of partial discharge, by the application diagnosis for live wire of ultra high voltage switchgear. Measured data by using the UHF partial discharge techniques for ultra high voltage switchgear was obtained from 200 places in Gumi, Yeosu, Taiwan and China's semiconductor plants, and also the partial discharge signals at 15 other places were found. It was confirmed that the partial discharge signal was destroyed by improving the work of junction bolt tightening check, and the cable head reinforcement insulation at 8 places with a possibility for preventing the interruption of service. Also, it was confirmed that the UHF partial discharge measurement techniques are also a prevention diagnosis method in actual industrial sites. The measured field data and the usage of the research for risk assessment techniques of the live wire status of power equipment make a valuable database for future improvements.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.11 no.5
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• pp.44-52
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• 1997

Electronic circuits with semiconductor and IC are very weak against the surge voltage and currents. The surge protective devices for electronic circuit and AC power lines are becoming more widely used. It is possible to give rise to the malfunction of the earth leakage circuit breaker(ELB) due to the operation of surge protective devices, and the interruption of AC power lines on account of the malfunction of the ELB brings about several disadvantages such as low operation efficiency and reliability of electronic and informational systems, economical loss, and etc. The aim of the present work is to investigate the dead operation characteristics of the ELB against the surge voltages. The impulse generator of 10[kV) in an 1.2/ 50[~) voltage waveform was fabricated. The dead operation characteristics of the ELB applied by surge voltages were measured under the conditions of KS C 4613 and the test circuit with a varistor. As a consequence, the peak value of the zero-phase sequence circuit of the ELB is increased as the surge voltage and stray capacitance increase. All of the ELBs used in this work were satisfied with the lightning impulse dead operation test condition defined in KS C 4613. However one specimen only did not bring about dead operation in the condition of the test circuit with a varistor. There is high possibility that a large portion of the ELB installed at the AC power lines with the surge protective devices bring about the dead operation.

• Journal of the Korean Society for Nondestructive Testing
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• v.26 no.2
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• pp.77-83
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• 2006

Ultrasonic nonlinearity has been considered as a solution for the detection of microcracks or interfacial delamination in a layered structure. The distinguished phenomenon in nonlinear ultrasonics is the generation of higher-order harmonic waves during the propagation. Therefore, in order to quantify the nonlinearity, the conventional method measures a parameter defined as the amplitude ratio of a second-order harmonic component and a fundamental frequency component included in the propagated ultrasonic wave signal. However, its application In field inspection is not easy at the present stage because no standard methodology has yet been made to accurately estimate this parameter. Thus, the aim of this paper is to propose an advanced signal processing technique for the precise estimation of a nonlinear ultrasonic parameter, which is based on power spectral and bispectral analysis. The method of estimating power spectrum and bispectrum of the pulse-like ultrasonic wave signal used in the commercial SAM (scanning acoustic microscopy) equipment is especially considered in this study The usefulness of the proposed method Is confirmed by experiments for a Newton ring with a continuous air gap between two glasses and a real semiconductor sample with local delaminations. The results show that the nonlinear parameter obtained tv the proposed method had a good correlation with the delamination.

• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.469-474
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• 2004

We have fabricated and designed wavelength-tunable sampled grating distributed Bragg reflector laser diodes(SGDBR-LD) by using, for the first time, planar buried heterostructures(PBH). The diodes have low threshold current values and high-performance of laser operation. Growth condition using metal organic chemical vapor deposition(MOCVD) was optimized for the formation of a good butt-coupling at the interface. A maximum output power of the fabricated device was 20 mW under 200 mA continuous wave(CW) operation at $25^{\circ}C$. Average threshold current and voltage were 12 mA and 0.8 V, approximately. This output power is higher than those of ridge waveguide(RWG) and buried ridge stripe(BRS) structures by amounts of 9 mW and 13 mW, respectively. We obtained a tuning range of 44.4nm which is well matched with the target value of our design. The side mode suppression ratio of more than 35 dB was obtained for the whole tuning range. Optical output power variation was less than 5 dB, which is 4 dB smaller than that of RWG structures.

• Polymer(Korea)
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• v.33 no.3
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• pp.191-197
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• 2009

We have investigated the effect of strong p-type organic semiconductor $F_4$-TCNQ-doped CuPc hole transport layer on the performance of p-i-n type bulk heterojunction photovoltaic device with ITO/PEDOT:PSS/CuPc: $F_4$-TCNQ(5 wt%)/CuPc:C60(blending ratio l:l)/C60/BCP/LiF/Al, architecture fabricated via vacuum deposition process, and have evaluated the J-V characteristics, short-circuit current ($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and power conversion efficiency(${\eta}_e$) of the device. By doping $F_4$-TCNQ into CuPc hole transport layer, increased absorption intensity in absorption spectra, uniform dispersion of organic molecules in the layer, surface uniformity of the layer, and enhanced injection currents improved the current photovoltaic device with power conversion efficiency(${\eta}_e$) of 0.16%, which is still low value compared to silicone solar cell indicating that many efforts should be made to improve organic photovoltaic devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.210-219
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• 2005

We report on a low-cost V-band wireless transceiver with no use of any local oscillator in the receiver block using a self-heterodyne architecture. V-band millimeter-wave monolithic IC (MMIC) modules were developed to demonstrate the wireless transceiver using coplanar waveguide (CPW) and GaAs PHEMT technologies. The MMIC modules such as the MMIC low noise amplifier (LNA), medium power amplifier (MPA) and the up/down-mixer were installed in the transceiver system. To interface the MMIC chips with the component modules for the transceiver system, CPW-to-waveguide fin-line transition modules of WR-15 type were designed and fabricated. The fabricated LNA modules showed a $S_{21}$ gain of 8.4 dB and a noise figure of 5.6 dB at 58 GHz. The MPA modules exhibited a gain of 6.9 dB and a $P_{1dB}$ of 5.4 dBm at 58 GHz. The conversion losses of the up-mixer and the down-mixer module were 14.3 dB at a LO power of 15 dBm, and 19.7 dB at a LO power of 0 dBm, respectively. From the measurement of V-band wireless transceiver, a conversion gain of 0.2 dB and a $P_{1dB}$ of 5.2 dBm were obtained in the transmitter block. The receiver block showed a conversion gain of 2.1 dB and a $P_{1dB}$ of -18.6 dBm. The wireless transceiver system demonstrated a successful data transfer within a distance of 5 meters.

• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.6
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• pp.560-568
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• 2005

The proposed Multi-level PDP sustain Driver is composed of the semiconductor devices with low voltage rating compared to those used in the prior circuit proposed by L. Wether, and it has two resonant periods during the charging (rising period) and discharging (falling period) the PDP in the sustaining voltage waveforms. In accordance with the change of timing phase$(T_{r1},\;T_{i1},\;T_{r2})$, the performance characteristics of a commercial PDP module has been carried out and compared the characteristic with the 42V6, made of LG Electronics co., Experimental results show that the performance characteristics of PDP module are greatly influenced by the variation of $T_{i1}\;and\;T_{r2}$. The variation of $T_{r1}$ do not influence much on the performances of PDP. With the conditions that $T_{r1}=60ns,\;T_{i1}=120ns,\;and\;T_{r2}=350ns$, we could get the performances listed as the luminance is increased $14.6\%$, the power consumptions is decreased $5.9\%$, the panel efficiency is increased $24.2\%$, module efficiency is increased $21.2\%$, compared to those shown in the commercial PDP module (42V6). Therefore, the proposed multi-level PDP sustain driver expected to be suitable to actual PDP module application.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.221-221
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• 2013

Vertical LED (VLED) has been recognized as a way to obtain the high-power LED due to their advantages [1]. However, approximately 4% of the light generated from the active region is extracted, if the light extraction from side walls and back side is neglected because of Fresnel reflection (FR) and total internal reflection (TIR) [2,3]. In this study, the optical simulation of the VLED with the various microstructures was performed. Among them, the microlens having the diameter of 3 ${\mu}m$ and the height of 1.5 ${\mu}m$ shown the best result was chosen, and then, optimized microlens was formed on a GaN template using conventional semiconductor process. Various microstructures were proposed to improve the light extraction efficiency (LEE) of the VLED for the simulation. The LEE was simulated using LightTools based on a Monte Carlo ray tracing. The microstructures with hemisphere, cone, truncated and cylinder pattern having diameter of 3 ${\mu}m$ were employed on the top layer of the VLED respectively. The improvement of the LEE by using the microstructure is 87% for the hemisphere, 77% for the cone, 53% for the truncated, 21% for the cylinder, compared with the LEE of the flat surface at the reflectance of 85%. The LEE was increased by 88% at the height of 1.5 ${\mu}m$, compared with the LEE of the flat surface. We found that the microlens on the top layer is the most suitable for increasing the LEE. In order to apply the proposed microlens on n-GaN surface, we fabricated microlens on a GaN template. A photoresist array having hexagonal-closed packed microlens was fabricated on the GaN template. Then, optimization of etching the GaN template was performed using a dry etching process with ICP-RIE. The dry etching carried out using a gas mixture of Cl2 and Ar, each having a flow rate of 16 sccm and 10 sccm, respectively with RF power of 50 W, ICP power of 900 W and chamber pressure of 2 mTorr was the optimum etching condition as shown in Fig. 2(a).

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.3
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• pp.443-450
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• 2021

After selecting a PES substrate with excellent thermal stability and optical properties among plastic substrates, a SiO₂ thin film was deposited as a buffer layer to a thickness of 20nm by plasma-enhanced chemical vapor deposition to compensate for the high moisture absorption. Then, the ITZO thin film was deposited by a RF magnetron sputtering method to investigate electrical and optical properties according to RF power. The ITZO thin film deposited at 50W showed the best electrical properties such as a resistivity of 8.02×10^-4 Ω-cm and a sheet resistance of 50.13Ω/sq.. The average transmittance of the ITZO thin film in the visible light region(400-800nm) was relatively high as 80% or more when the RF power was 40 and 50W. Figure of Merits (Φ_TC and FOM) showed the largest values of 23.90×10^-4 Ω^-1 and 5883 Ω^-1cm^-1, respectively, in the ITZO thin film deposited at 50W.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.332-336
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• 2024

High-energy bandgap material silicon carbide (SiC) is gaining attention as a next-generation power semiconductor material, and in particular, SiC-based MOSFETs are developed as representative power semiconductors to increase the breakdown voltage (BV) of conventional planar structures. However, as the size of SJ (Super Junction) MOSFET devices decreases and the depth of pillars increases, it becomes challenging to uniformly form the doping concentration of pillars. Therefore, a structure with different doping concentrations segmented within the pillar is being researched. Using Silvaco TCAD simulation, a SJ VVD (vertical variation doping profile) MOSFET with three different doping concentrations in the pillar was studied. Simulations were conducted for the width of the pillar and the doping concentration of N-epi, revealing that as the width of the pillar increases, the depletion region widens, leading to an increase in on-specific resistance (R_on,sp) and breakdown voltage (BV). Additionally, as the doping concentration of N-epi increases, the number of carriers increases, and the depletion region narrows, resulting in a decrease in R_on,sp and BV. The optimized SJ VVD MOSFET exhibits a very high figure of merit (BFOM) of 13,400 KW/cm², indicating excellent performance characteristics and suggesting its potential as a next-generation highperformance power device suitable for practical applications.