• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.3
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• pp.274-281
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• 2005

A new resonant pulse converter for energy harvesting is proposed. The converter transfers energy from a low-voltage AC current to a battery. The low-voltage AC current source is an equivalent of the piezoelectric generator, which converts the mechanical energy to the electric energy. The converter consists of a full-bridge rectifier having four N-type MOSFETs and a boost converter haying N-type MOSFET and P-type MOSFET instead of diode. Switching of MOSFETs utilizes the capability of the $3^{rd}$ regional operation. The operational principles and switching method for the power control of the converter are investigated with the consideration of effects of the parasitic capacitances of MOSFETs. Simulation and experiment are performed to prove the analysis of the converter operation and to show the possibility of the $\mu$W energy harvesting.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.5
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• pp.290-297
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• 2003

Analytical Expressions of temperature dependent breakdown voltage and on-resistance for silicon power MOSFETs are induced by employing the temperature dependent effective ionization coefficient extracted from temperature dependent ionization coefficients for electron and hole, and electron mobility in silicon. The analytical results for temperature dependent breakdown voltage are compared with experimental results for tile doping concentration, 4x10$^{14}$ cm$^{-3}$ , 1x10$^{15}$ cm$^{-3}$ , 6x10$^{16}$ cm$^{-3}$ respectively. The variations of temperature dependent on-resistance and breakdown voltage dependent ideal specific on-resistance are also compared with the ones reported previously. Good fits with the experimental results ate found for the breakdown voltages within 10% in error for the temperature in the range of 77~300K at each doping concentration.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.3
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• pp.263-267
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• 2014

Super junction trench gate power MOSFETs have been receiving attention in terms of the trade-off between breakdown voltage and on-resistance. The vertical structure of super junction trench gate power MOSFETs allows the on-resistance to be reduced compared with conventional Trench Gate Power MOSFETs. The heat release of devices is also decreased with the reduction of on-resistance. In this paper, Lattice Temperature of two devices, Trench Gate Power MOSFET and Super junction trench gate power MOSFET, are compared in several temperature circumstance with the same Breakdown Voltage and Cell-pitch. The devices were designed by 100V Breakdown voltage and measured from 250K Lattice Temperature. We have tried to investigate how much temperature rise in the same condition. According as temperature gap between top of devices and bottom of devices, Super junction trench gate power MOSFET has a tendency to generate lower heat release than Trench Gate Power MOSFET. This means that Super junction trench gate power MOSFET is superior for wide-temperature range operation. When trench etching process is applied for making P-pillar region, trench angle factor is also important component. Depending on trench angle, characteristics of Super junction device are changed. In this paper, we focus temperature characteristic as changing trench angle factor. Consequently, Trench angle factor don't have a great effect on temperature change.

• Proceedings of the KIPE Conference
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• 2017.11a
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• pp.45-46
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• 2017

The operating characteristics of power MOSFETs greatly vary depending on the junction temperature. A PSpice thermal model is implemented to simulate the temperature characteristics of the power MOSFETs in this paper. A thermal model is derived that can be applied online in PSpice simulations and PSpice parameters are reconstructed using a curve fitting from commercial data sheets. The implemented PSpice model is applied to the buck converter and the validity of the model is verified through experiments.

• Journal of Power Electronics
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• v.6 no.3
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• pp.271-278
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• 2006

A new high efficiency zero-voltage and zero-current switching (ZVZCS) bidirectional DC/DC converter is proposed in this paper. The proposed converter consists of two symmetric half-bridge cells as the input and output stages. MOSFETs of input stage are turned-on in ZVS condition, and those of output stage are turned-off in ZCS condition. In addition, MOSFETs of input and output stages have low voltage stresses clamped to input and output voltage, respectively. Therefore, the proposed converter has high efficiency and high power density. The operational principles are analyzed and the advantages of the proposed converter are described. The 300W prototype of the proposed converter is implemented for 42V hybrid electric vehicle (HEV) application in order to verify the operational principles and advantages.

• Journal of Power Electronics
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• v.18 no.3
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• pp.892-901
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• 2018

SiC MOSFETs have been used to improve system efficiency in high frequency converters due to their extremely high switching speed. However, this can result in undesirable parasitic oscillations in practical systems. In this paper, models of the key components are introduced first. Then, theoretical formulas are derived to calculate the switching oscillation frequencies after full turn-on and turn-off in clamped inductive circuits. Analysis indicates that the turn-on oscillation frequency depends on the power loop parasitic inductance and parasitic capacitances of the freewheeling diode and load inductor. On the other hand, the turn-off oscillation frequency is found to be determined by the output parasitic capacitance of the SiC MOSFET and power loop parasitic inductance. Moreover, the shifting regularity of the turn-off maximum peak voltage with a varying switching speed is investigated on the basis of time domain simulation. The distortion of the turn-on current is theoretically analyzed. Finally, experimental results verifying the above calculations and analyses are presented.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.231-234
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• 2003

This paper presents a novel high frequency transformer linked full-bridge type soft-switching phase-shift PWM control scheme DC-DC power converter, which can be used as power conditioner fur small-scale fuel cell power generation system. Using full-bridge soft-switching DC-DC converter topology makes possible to use low voltage high performance MOSFETs to achieve high efficiency of the power conditioner. A tapped inductor filter is implemented in the proposed soft-switching converter topology to achieve soft-switching PWM constant high frequency operation for a wide load variation range. to minimize circulating and idling currents without using additional resonant circuit and auxiliary power switching devices. The practical effectiveness of the proposed soft-switching DC-DC converter is verified in laboratory level experiment with 1 kW 100kHz breadboard setup using power MOSFETs. Actual efficiency of 94-96$\%$ is obtained for the wide load range

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.563-569
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• 2015

For some low-frequency applications such as power-related circuits, NEM relays have been known to show better performance than MOSFETs. For example, in a step-down charge pump circuit, the NEM relays showed much smaller layout area and better energy efficiency than MOSFETs. However, severe process variations of NEM relays hinder them from being widely used in various low-frequency applications. To mitigate the process-variation problems of NEM relays, in this paper, a new NEM-relay charge pump circuit with the self-adjustment is proposed. By self-adjusting a pulse amplitude voltage according to process variations, the power consumption can be saved by 4.6%, compared to the conventional scheme without the self-adjustment. This power saving can also be helpful in improving the power efficiency of the proposed scheme. From the circuit simulation of NEM-relay charge pump circuit, the efficiency of the proposed scheme is improved better by 4.1% than the conventional.

• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.615-618
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• 2000

A number of studies have recently been made on hardware for a biological neuron f3r application with information processing functions of neural networks. We have been trying to produce hardware from the viewpoint that development of a new hardware neuron model is one of the important problems in the study of neural networks. In this paper, we first discuss the circuit structure of a pulse-type hardware neuron model with the enhancement-mode MOSFETs (E-MOSFETs). And we construct a pulse-type hardware neuron model using I-MOSFETs. As a result, it is shown that our proposed new model can exhibit firing phenomena even if the power supply voltage becomes less than 1.5[V]. So it is verified that our model is profitable for IC.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.439-441
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• 2005

A new LLC resonant converter with multiple outputs is proposed for high efficiency and low cost plasma display panel (PDP) power module. In the proposed converter, ZVS turn-on of the primary MOSFETs and ZCS nun-off of the secondary diodes are guaranteed in the overall input voltage and output load range. Moreover, the primary MOSFETs and the secondary diodes have low voltage stresses clamped to input and the output voltage, respectively. Therefore, the proposed converter shows the high efficiency due to the minimized switching and conduction losses. In addition, by employing the transformer, which has the two and more secondary side, the proposed converter can have multiple outputs and they show the great cross-regulation characteristics. As a result, the proposed converter can be implemented with low cost and compact size. The 500W prototype is implemented, which integrates the sustaining and addressing power supplies of PDP power module. The maximum efficiency is 96.8% and the respective output voltages are well regulated. Therefore, the proposed converter is suitable for high efficiency and low cost PDP power module.