• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1991.10a
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• pp.75-79
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• 1991

In this study, a new sinusoidal PWM inverter suitable for use with power MOSFETs is described. The output waveforms in the proposed OWM inverter are investigated both theoretically and experimentally. A modulating signal for the three-phase PWM inverter is obtained by adding 3nth harmonics to the conventional three-phase sine wave. By using the new modulating signal, the amplitude of the fundamental component is increased about 15 percent more than that of a conventional sine wave inverter and the commutation number of the inverter is decreased to two-thirds of a conventional one.

• Proceedings of the KIEE Conference
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• 2001.07b
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• pp.1023-1025
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• 2001

This paper proposes a bi-directional current switch with snubber regeneration using Power MOSFETs and this paper proposes to use a loss-less snubber with switching device to perform soft-switching. It results in not only decreasing switching loss in the device drastically, but also improving input ac current waveform distortion. The computer simulation results show that the input current waveform and show the requirements necessary for the elimination of the 3rd harmonic component. We also show the procedure to design the parameters of the converter.

• Journal of Power Electronics
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• v.11 no.1
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• pp.28-36
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• 2011

In this paper, a three phase cycloconverter type high frequency AC link inverter is discussed. The configuration consists of a high frequency full-bridge inverter and a high frequency transformer followed by a three phase cycloconverter whose switch is composed of anti-series connected MOSFETs with a common source. A simple digital control strategy based on space vector modulation (SVM) and repetitive control for the cycloconverter is proposed although its input voltage is a high frequency AC pulse. The operation principle of the proposed control strategy is analyzed and the equivalent working modes during one interval are also presented. The effectiveness of the proposed control strategy is verified through Matlab/Simulink simulations and experiments on a 1.45kW prototype.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.99-101
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• 2005

A gate driver with Boot-strap chain is proposed to drive Multi-level PDP sustain switches. The proposed gate driver uses only one boot-strap capacitor and one diode per each MOSFETs switch without floating power supply. By adoption of this gate driver circuits, the size, weight and the cost of the drivel board can be reduced.

• Proceedings of the KIEE Conference
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• 2001.10a
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• pp.212-214
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• 2001

This paper proposes a hi-directional current switch with snubber regeneration using Power MOSFETs and to use a loss-less snubber with switching device to perform soft-switching. It results in not only decreasing switching loss in the device drastically, but also improving input ac current waveform distortion. The computer simulation results show that the input current waveform and show the requirements necessary for the elimination of the 3rd harmonic component. We also show the Procedure to design the parameters of the converter.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1286-1288
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• 1993

An analytical method for the optimum design of the minimum die size in power MOSFETs is presented. The proposed methodology considers the thermal resistance of the package and gives the minimum die area for desired drain current levels. The results are compared with experimental data and it is found that the die size mar be reduced if it is designed according to the proposed design procedure.

• The Transactions of the Korean Institute of Power Electronics
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• v.4 no.2
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• pp.152-158
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• 1999

Due to high power ratings and low conduction loss, the TGBT has become more attractive in switching power supplies. However, its lower turn-on and turn-off characteristics than those of MOSFET cause severe switching loss and s switching frequency limitation. This paper proposes 2.4kW. 48V. high efficiency half-bridge DC-DC converter using p paralleled TGBT-MOSFET switch concept to use the merits of TGBTs and MOSFETs. Tn parallel switches. each of I TGBT and MOSFET plays its part during on-periods and switching instants. The switching loss is analyzed by l linearized modelling and the operation of the converter are investigated by simulation results.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.4
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• pp.312-323
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• 2017

This paper introduces the bidirectional dc-dc converter design case study, which employs silicon-carbide (SiC) MOSFETs for battery energy storage system (BESS). This converter topology is selected as bidirectional synchronous buck converter, which is composed of a half bridge converter, an inductor, and a capacitor, where the converter has less conduction loss than that of a unidirectional buck and boost converter, and to improve the converter efficiency, both the power stage design and power conversion architecture are described in detail. The conduction and switching losses are compared among three different SiC devices in this paper. In addition, the thermal analysis using Maxwell software of each switching device supports the loss analyses, in which both the 2 kW prototype analyses and experimental results show very good agreement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.4
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• pp.213-217
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• 2015

Device model parameters are very important for accurate estimation of electrical performances in devices, integrated circuits and their systems. There are a large number of methods for extraction of model parameters in power MOSFETs. For high efficiency, design is important considerations of a power MOSFET with high-voltage applications in consumer electronics. Meanwhile, it was proposed that the efficiency of a MOSFET can be enhanced by conducting JFET region double implant to reduce the On-resistance of the transistor. This paper reports the effects of JFET region double implant on the electrical properties and the decreasing On-resistance of the MOSFET. Experimental results show that the 1st JFET region implant diffuse can enhance the On-resistance by decreasing the ion concentration due to the surface and reduce the On-resistance by implanting the 2nd Phosphorus to the surface JFET region.

• Journal of Power Electronics
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• v.14 no.4
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• pp.661-670
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• 2014

A new DC/DC converter with zero voltage switching is proposed for applications with high input voltage and high load current. The proposed converter has two circuit modules that share load current and power rating. Interleaved pulse-width modulation (PWM) is adopted to generate switch control signals. Thus, ripple currents are reduced at the input and output sides. For high-voltage applications, each circuit module includes two half-bridge legs that are connected in series to reduce switch voltage rating to $V_{in}/2$. These legs are controlled with the use of asymmetric PWM. To reduce the current rating of rectifier diodes and share load current for high-load-current applications, two center-tapped rectifiers are adopted in each circuit module. The primary windings of two transformers are connected in series at the high voltage side to balance output inductor currents. Two series capacitors are adopted at the AC terminals of the two half-bridge legs to balance the two input capacitor voltages. The resonant behavior of the inductance and capacitance at the transition interval enable MOSFETs to be switched on under zero voltage switching. The circuit configuration, system characteristics, and design are discussed in detail. Experiments based on a laboratory prototype are conducted to verify the effectiveness of the proposed converter.