• 한국철도학회:학술대회논문집
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• 한국철도학회 1998년도 추계학술대회 논문집
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• pp.226-232
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• 1998

In this pager, we present IGBT VVVF inverters as a 1C1M propulsion system for electric car. This inverters are composed of high power IGBT's and controlled by compact control units. The control unit performs full digital control by using 32bit DSP and microconteroller. By using CAN-bus, high speed network is constructed within tow control units. The stack is simplified and optimized by using plate bus and IGBT driver units of hybrid-type.

• 청정기술
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• 제28권3호
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• pp.227-231
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• 2022

고전압 전력반도체의 수요는 산업의 전반에 걸쳐 증가하고 있는 추세이며, 특히 자율주행이나 전기자동차와 같은 교통 수단에 이용되는 경우 전동차의 동력 추진 제어 장치에 3.3 kV 이상의 IGBT 모듈 부품이 사용되고 있으며, 전동차의 신설과 유지 관리에 따른 부품의 조달이 매년 증가하고 있다. 게다가 기술 진입 장벽이 매우 높은 기술로서 해당 산업계에서는 고전압 IGBT부품의 최적화 연구가 절실히 요구되고 있다. 3.3 kV 이상 고전압 IGBT 소자 개발을 위해 웨이퍼의 비저항 범위 설정과 주요 단위 공정의 최적 조건이 중요한 변수이며, 높은 항복 전압을 위한 핵심 기술로 junction depth의 확보가 무엇보다 중요하다. 최적의 junction depth를 확보하기 위한 제조 공정 중에서 단위 공정 중 한 단계인 확산 공정의 최적화를 살펴보았다. 확산 공정에서는 주입되는 가스의 종류와 시간 그리고 온도가 주요 변수이다. 본 연구에서는 단위 공정의 시뮬레이션을 통하여 고전압 IGBT 소자 개발을 위한 웨이퍼 저항의 (Ω cm) 범위를 설정하고, 확산 공정의 온도에 따른 확산 공정의 WDR(Well drive in) 조건 최적화에 대하여 연구한 결과 링 패턴의 width 23.5 ~ 25.87 ㎛에 대하여 junction depth는 7.4 ~ 7.5 ㎛를 얻어 3.3 kV 고전압 전력반도체 지지에 최적화할 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 춘계학술대회 논문집 전력기술부문
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• pp.194-196
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• 2001

Light dimming is based on adjusting the voltage which gets to the lamp. Light dimming has been possible for many decades by using adjustable power resistors and adjustable transformers. The power electronics have proceeded quietly since 1960. Between 1960-1970 thyristors and triacs came to market. Using those components it was quite easy to make small and inexpensive light dimmers which have goof efficiency. This type of electronic light dimmers became available after 1970 and are nowadays used in very many locations like homes, restaurants, conference rooms and in stage lighting. But the problem of thyristor dimmer have been that it has poor efficiency and voltage drop. Recently IGBT(Insulated Gate Bipolar Transistor) control is a new way to do light dimming for improving this problems. IGBT dimmer has many other advantages over traditional thyristor dimmer there are no huge current spikes and EMI caused by turn on Using IGBT it is possible to make the turn-off rate relatively slot to achieve quite operations in terms of EMI and acoustical or incandescent lamp filament noise. For the development of IGBT dimmer. This paper shows the effects of IGBT dimmer compared with thyristor dimmer through a simulation using EMTDC.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 전력전자학술대회 논문집
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• pp.520-524
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• 2001

Recently, the demand of large capacity SMPS for industrial area is increasing. Full-bridge dc-dc converter with IGBT is most widely used for large capacity SMPS because IGBT has a low-conduction loss and large current capacity, But most large capacity Full-bridge do-dc converter using IGBT has low operating frequency because of switching loss at IGBT especially at turn-off by current tail and it's cause of relatively big converter size. MOSFET has low switching losses has been widely used for high frequency SMPS but it has a problem to apply to large capacity SMPS because it has large conduction resistance causing large on-time losses. In this paper, for reduction losses at switching device, MOSFET is applied at parallel with IGBT in full-bridge dc/dc converter.

• 전력전자학회논문지
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• 제4권4호
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• pp.332-341
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• 1999

철도용 전동기는 작은 크기와 중량에 비해 큰 추진력(토크)을 필요로 하지만, 전철의 입력전원 시스템의 특유한 성질로 입력전압이 주기적으로 부족하다. 따라서 전압이용률을 최대화할 수 있는 과변조 PWM이 필요하다. 또 철도용 IGBT 인버터의 스위칭 주파수는 기존의 GTO인버터보다 2배 이상 크므로 철도용 IGBT 인버터 전용의 새로운 동기화 전략이 필요하다. 본 논문은 'Min/Max PWM'을 과변조 영역으로 선형 확장하는 과변조 PWM기법과 최적 동기화법을 혼합한 철도용 IGBT 인버터를 위한 최적 PWM 전략을 제안한다. 전동기-관성부하 모델을 대상으로 시뮬레이션한 결과와 축소모델 실험 결과는 본 전략이 타당함을 보여준다.

• Journal of Electrical Engineering and Technology
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• 제7권4호
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• pp.601-605
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• 2012

Insulated Gate Bipolar Transistors(IGBTs) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the onstate voltage drop should be lowered and the switching time should be shortened. However, there is trade-off between the breakdown voltage and the on-state voltage drop. The FLoatingIsland(FLI) structure can lower the on-state voltage drop without reducing breakdown voltage. In this paper, The FLI IGBT shows an on-state voltage drop that is 22.5% lower than the conventional IGBT, even though the breakdown voltages of each IGBT are almost identical.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 A
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• pp.562-564
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• 1994

IGBT devices have the best features of both power MOSFETs and power bipolar transistors, i. e., efficient voltage gate drive requirements and high current density capability. The interaction of the IGBT with the load circuit can be described using the device model and the state equation of the load circuit. The protection circuit requirements are unique for the IGBT and can be examined using the model.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.563-564
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) for power switching device based on Non Punch Through(NPT) IGBT structure. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The proposed device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure.

• 한국전기전자재료학회논문지
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• 제28권8호
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• pp.490-495
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• 2015

This paper was proposed the theoretical research and optimal design 3,000 V IGBT for using electrical automotive, high speed train and first power conversion. To obtaining 3,000 V breakdown voltage, the design parameters was showed $160{\Omega}{\cdot}cm$ resistivity and $430{\mu}m$ drift length. And to maintain 5 V threshold voltage, we obtained $6.5{\times}10^{13}cm^{-2}$ p-base dose. We confirmed $24{\mu}m$ cell pitch for maintain optimal on state voltage drop and thermal characteristics. This 3,000 V IGBT was replaced to thyristor devices using first power conversion and high speed train, presently.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2009년도 춘계학술대회 논문집
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• pp.1943-1950
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• 2009

The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO (Gate Turnoff Thyristor) technology. The IGBT combines the advantages of a power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) and a bipolar power transistor. The change of electrical characteristics for IGBT is mainly coming from the change of characteristics of MOSFET at the input gate and the PNP transistors at the output. The gate oxide structure gives the main influence on the changes in the electrical characteristics affected by environments such as radiation and temperature, etc.. The change of threshold voltage, which is one of the important design parameters, is brought by charge trapping at the gate oxide. In this paper, the electrical characteristics are simulated by SPICE simulation, and the parameters are found to design optimized circuits.