• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.43-51
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• 2023

In this paper, we introduce the development trends of power devices which is the key component for power conversion system in electric vehicles, and discuss the characteristics of the next-generation wide-bandgap (WBG) power devices. We provide an overview of the characteristics of the present mainstream Si insulated gate bipolar transistor (IGBT) devices and technology roadmap of Si IGBT by different manufacturers. Next, recent progress and advantages of SiC metal-oxide-semiconductor field-effect transistor (MOSFET) which are the most important unipolar devices, is described compared with conventional Si IGBT. Furthermore, due to the limitations of the current GaN power device technology, the issues encountered in applying the power conversion module for electric vehicles were described.

• The Transactions of the Korean Institute of Power Electronics
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• v.5 no.1
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• pp.39-45
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• 2000

최근에 전력용 반도체 스위치의 정격이 커지면서 IGBT와 같은 소자는 그 편리성과 대용량화로 점차 많은 응용분야에 이용되고 있다. 특히 보다 높은 전압 정격을 용구하는 중·대용량 분야, 소용량이면서 고압 정격을 요구하는 분야의 저가의 전력용 반도체 고압 스위치가 요구되는 분야 등에서 높은 정격을 가지는 IGBT스위치를 구현하기 위하여 그 소자들간의 직렬로 연결하는 것이 필수적이다. 본 논문에서는 수 kV의 동작전압을 가지는 스위치를 실현하기 위하여 기존의 직렬 연결된 IGBT에 제안된 보조회로를 삽입하였다. 본 논문에서는 IGBT를 이용한 고압스위칭 동작원리와 그 기능을 검증하기 위해 4개의 IGBT를 직렬연결한 3kV/45A급 스위치를 제작하여 과도상태 및 정상상태에서의 전압 분배를 실험하였다.

• Proceedings of the KIPE Conference
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• 1997.07a
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• pp.309-313
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• 1997

The SIV(Static InVerter) of the electric coach mainly consists of GTO type inverter. But, it is the drawback that GTO type inverter must have the complicated driving circuits. Recently, appearing the IGBT of high speed switching frequency, simple driving circuits, relative large capacity, GTO type inverter is changed IGBT type inverter. In this paper, IGBT type SIV substituting for the existing GTO type SIV is designed and producted. The experimental results are presented to verify the performance of the designed IGBT type SIV.

• Proceedings of the KSR Conference
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• 2008.06a
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• pp.1853-1859
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• 2008

IGBT modules are designed for low loss, rugged for all environments and user friendly. Low on state saturation voltage with high switching speed is the primary concerns. In this paper selection of IGBT, module ratings and characteristics are discussed. The IGBT design topic of protection against over voltage and over current are covered. Emphasis on turn off switching, short circuit switching and necessary precautions are dealt. Selection of IGBT device, gate drive power, and its lay out considerations are covered in detail.

• KIPE Magazine
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• v.3 no.2
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• pp.7-9
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• 1998

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.444-446
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• 1998

Pspice을 사용하여 IGBT의 게이트 드라이브의 동작과 시스템의 단락에 의한 Fault 발생시 IGBT를 보호하기 위해서 밀러 효과에 의한 전류를 게이트 저항을 통하지 않고 이미터로 흐르게 하여 게이트 전압의 상승을 줄여주는 방법을 제안하고 게이트 전압을 낮게 클램핑하는 방법과 비교하였다.

• Journal of the Korean Society for Railway
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• v.13 no.5
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• pp.504-508
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• 2010

The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO (Gate Turnoff Thyristor) technology. The IGBT combines the advantages of a power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) and a bipolar power transistor. The change of electrical characteristics for IGBT is mainly coming from the change of characteristics of MOSFET at the input gate and the PNP transistors at the output. The change of threshold voltage, which is one of the important design parameters, is brought by charge trapping at the gate oxide under the environment that radiation exists. The energy loss will be also studied as the inductance values are changed. In this paper, the electrical characteristics are simulated by SPICE, and compared for variation of inductance and threshold voltage based on IGBT.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.7
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• pp.89-95
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• 2014

An LED lighting which adjusted brightness according to the surround ambient implemented using PWM technology and power devices. To measure the brightness of surround ambient a CdS sensor was used. A control board for the generation of the PWM signal was made using a MCU and duty ratio was controlled according to light intensity of surround ambient of the system. To drive the LED lamps which require high-voltage and high-current power devices were used for switching the DC power supply. Measurement results show that the IGBT is excellent as only lineality but the PowerBJT is more good to consider to efficiency and cost.

• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.107-108
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• 2016

Solid State Transformer(SST) has been recently regarded as a good alternative to conventional low frequency transformer. SST is consist of several high voltage power stage, so it is important to select optimal semiconductor switches for specification. This paper presents optimal IGBT switches for low switching losses using analyzing switching characteristics of several high voltage IGBT switches. Double Pulse Tester(DPT) experiment is used to verify characteristics of this IGBT switches.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.148-150
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• 1993

The IGBT(Insulated Gate Bipolar Transistor) is a power semiconductor device that has gained acceptance among power electronic circuit design engineers for motor drive and Power converter applications. The device-circuit interaction of power insulated gate bipolar transistor for a series-inductor load, both with and without a snubber are, simulated. An analytical model for the transient operation of the IGBT is used in conjunction with the load circuit state equations for the simulations.