• Title/Summary/Keyword: Power Devices and ICs

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Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor

  • Park, Sung-Hoon;Lee, Jae-Gil;Cho, Chun-Hyung;Choi, Yearn-Ik;Kim, Hyungtak;Cha, Ho-Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.2
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    • pp.215-220
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    • 2016
  • Monolithically integrated devices are strongly desired in next generation power ICs to reduce the chip size and improve the efficiency and frequency response. Three examples of the embedment of different functional diode(s) into AlGaN/GaN heterojunction field-effect transistors are presented, which can minimize the parasitic effects caused by interconnection between devices.

Technology Trend of SiC CMOS Device/Process and Integrated Circuit for Extreme High-Temperature Applications (고온 동작용 SiC CMOS 소자/공정 및 집적회로 기술동향)

  • Won, J.I.;Jung, D.Y.;Cho, D.H.;Jang, H.G.;Park, K.S.;Kim, S.G.;Park, J.M.
    • Electronics and Telecommunications Trends
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    • v.33 no.6
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    • pp.1-11
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    • 2018
  • Several industrial applications such as space exploration, aerospace, automotive, the downhole oil and gas industry, and geothermal power plants require specific electronic systems under extremely high temperatures. For the majority of such applications, silicon-based technologies (bulk silicon, silicon-on-insulator) are limited by their maximum operating temperature. Silicon carbide (SiC) has been recognized as one of the prime candidates for providing the desired semiconductor in extremely high-temperature applications. In addition, it has become particularly interesting owing to a Si-compatible process technology for dedicated devices and integrated circuits. This paper briefly introduces a variety of SiC-based integrated circuits for use under extremely high temperatures and covers the technology trend of SiC CMOS devices and processes including the useful implementation of SiC ICs.

Electrical Characteristics of Power Switching Sensor IC fabricated in Bipolar-CMOS-DMOS Process (BCD 프로세스를 이용한 파워 스위칭 센서 IC의 제작과 특성 연구)

  • Kim, Sunjung
    • Journal of IKEEE
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    • v.20 no.4
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    • pp.428-431
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    • 2016
  • Power semiconductor devices had been producted with bipolar only processes, but Bipolar-CMOS-DMOS(BCD) processes have been adapted recently to fabricate these devices since most foundry companies have provided BCD processes instead of Bipolar only processes. In this study, Regulator and OP Amp are used as most popular design IPs and BCD processes for the designing are converted from bipolar only processes. Power Switching Sensor(PSS) ICs are designed specifically and fabricated on a silicon chip. The operation results of the packaged chip show the good matching with test results of the simulation.

Advanced Mobile Display System Architecture

  • Kim, Chang-Sun;Kwon, Oh-Kyong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.850-853
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    • 2005
  • This paper presents issues of display hardware architecture, relating to memory, display driver IC architecture, and chip-to-chip interface. To achieve a low power and low cost mobile phone, not only the display architecture must be carefully selected, but also the driver-ICs optimized to accommodate the different modes of operation found in typical handheld devices. The technique of forming a photo sensor in each pixel using TFT and display module architecture are developed to add multi functions in display such as fingerprint recognition, image scanning, and integrated touch screen. Detailed architectures of IC partitioning, high-speed serial interface, D/A converter, and multi functions such as fingerprint recognition and image scanning using photo sensors are important to a power optimized system.

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The Electrical Characteristics of 1200V Trench Gate MOSFET Based on SiC (1200V급 SiC 기반 트렌치 게이트 MOSFET의 전기적 특성에 관한 연구)

  • Yu Rim Kim;Dong Hyeon Lee;Min Seo Kim;Jin Woo Choi;Ey Goo Kang
    • Journal of IKEEE
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    • v.27 no.1
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    • pp.103-108
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    • 2023
  • This research was carried out experiments with changing processes and design parameters to optimally design a SiC-based 1200V power MOSFET, and then, essential electrical characteristics were derived. In order to secure the excellence of the trench gate type SiC power MOSFET device to be designed, electrical characteristics were derived by designing it under conditions such as planner gate SiC power MOSFET, and it was compared with the trench gate type SiC power MOSFET device. As a result of the comparative analysis, the on-resistance while maintaining the yield voltage was 1,840mΩ, for planner gate power MOSFET and to 40mΩ for trench gate power MOSFET, respectively, indicating characteristics more than 40 times better. It was judged that excellent results were derived because the temperature resistance directly affects energy efficiency. It is predicted that the devices optimized through this experiment can sufficiently replace the IGBT devices generally used in 1200V class, and that since the SiC devices are wide band gap devices, they will be widely used to apply semiconductors for vehicles using devices with excellent thermal characteristics.

Energy efficiency strategy for a general real-time wireless sensor platform

  • Chen, ZhiCong
    • Smart Structures and Systems
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    • v.14 no.4
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    • pp.617-641
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    • 2014
  • The energy constraint is still a common issue for the practical application of wireless sensors, since they are usually powered by batteries which limit their lifetime. In this paper, a practical compound energy efficiency strategy is proposed and realized in the implementation of a real time wireless sensor platform. The platform is intended for wireless structural monitoring applications and consists of three parts, wireless sensing unit, base station and data acquisition and configuration software running in a computer within the Matlab environment. The high energy efficiency of the wireless sensor platform is achieved by a proposed adaptive radio transmission power control algorithm, and some straightforward methods, including adopting low power ICs and high efficient power management circuits, low duty cycle radio polling and switching off radio between two adjacent data packets' transmission. The adaptive transmission power control algorithm is based on the statistical average of the path loss estimations using a moving average filter. The algorithm is implemented in the wireless node and relies on the received signal strength feedback piggybacked in the ACK packet from the base station node to estimate the path loss. Therefore, it does not need any control packet overheads. Several experiments are carried out to investigate the link quality of radio channels, validate and evaluate the proposed adaptive transmission power control algorithm, including static and dynamic experiments.

A Study on Power Dissipation of The Multicore Processor (멀티코어 프로세서의 전력 소비에 대한 연구)

  • Lee, Jongbok
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.17 no.2
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    • pp.251-256
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    • 2017
  • Recently, multicore processor system is widely adopted not only in general purpose computers but also in embedded systems and mobile devices in order to improve performance. Since the power dissipation issue of multicore processor system is very significant, it must be estimated accurately in the early design stage. In this paper, a fast power analysis tool for a high performance multicore processor based on the trace-driven simulator has been developed. To achieve it, the power dissipation of each hardware unit per core are added. Using SPEC 2000 benchmarks as input, the trace-driven simulation has been performed to estimate the average power dissipation per instruction.

3-D Hetero-Integration Technologies for Multifunctional Convergence Systems

  • Lee, Kang-Wook
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.2
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    • pp.11-19
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    • 2015
  • Since CMOS device scaling has stalled, three-dimensional (3-D) integration allows extending Moore's law to ever high density, higher functionality, higher performance, and more diversed materials and devices to be integrated with lower cost. 3-D integration has many benefits such as increased multi-functionality, increased performance, increased data bandwidth, reduced power, small form factor, reduced packaging volume, because it vertically stacks multiple materials, technologies, and functional components such as processor, memory, sensors, logic, analog, and power ICs into one stacked chip. Anticipated applications start with memory, handheld devices, and high-performance computers and especially extend to multifunctional convengence systems such as cloud networking for internet of things, exascale computing for big data server, electrical vehicle system for future automotive, radioactivity safety system, energy harvesting system and, wireless implantable medical system by flexible heterogeneous integrations involving CMOS, MEMS, sensors and photonic circuits. However, heterogeneous integration of different functional devices has many technical challenges owing to various types of size, thickness, and substrate of different functional devices, because they were fabricated by different technologies. This paper describes new 3-D heterogeneous integration technologies of chip self-assembling stacking and 3-D heterogeneous opto-electronics integration, backside TSV fabrication developed by Tohoku University for multifunctional convergence systems. The paper introduce a high speed sensing, highly parallel processing image sensor system comprising a 3-D stacked image sensor with extremely fast signal sensing and processing speed and a 3-D stacked microprocessor with a self-test and self-repair function for autonomous driving assist fabricated by 3-D heterogeneous integration technologies.

Real Time ECG Monitoring Through a Wearable Smart T-shirt

  • Mathias, Dakurah Naangmenkpeong;Kim, Sung-Il;Park, Jae-Soon;Joung, Yeun-Ho
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.1
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    • pp.16-19
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    • 2015
  • A wearable sensing ECG T-shirt for ubiquitous vital signs sensing is proposed. The sensor system consists of a signal processing board and capacitive sensing electrodes which together enable measurement of an electrocardiogram (ECG) on the human chest with minimal discomfort. The capacitive sensing method was employed to prevent direct ECG measurement on the skin and also to provide maximum convenience to the user. Also, low power integrated circuits (ICs) and passive electrodes were employed in this research to reduce the power consumption of the entire system. Small flexible electrodes were placed into cotton pockets and affixed to the interior of a worn tight NIKE Pro combat T-shirt. Appropriate signal conditioning and processing were implemented to remove motion artifacts. The entire system was portable and consumed low power compared to conventional ECG devices. The ECG signal obtained from a 24 yr. old male was comparable to that of an ECG simulator.

TSV Liquid Cooling System for 3D Integrated Circuits (3D IC 열관리를 위한 TSV Liquid Cooling System)

  • Park, Manseok;Kim, Sungdong;Kim, Sarah Eunkyung
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.3
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    • pp.1-6
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    • 2013
  • 3D integrated circuit(IC) technology with TSV(through Si via) liquid cooling system is discussed. As a device scales down, both interconnect and packaging technologies are not fast enough to follow transistor's technology. 3D IC technology is considered as one of key technologies to resolve a device scaling issue between transistor and packaging. However, despite of many advantages, 3D IC technology suffers from power delivery, thermal management, manufacturing yield, and device test. Especially for high density and high performance devices, power density increases significantly and it results in a major thermal problem in stacked ICs. In this paper, the recent studies of TSV liquid cooling system has been reviewed as one of device cooling methods for the next generation thermal management.