• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.11
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• pp.1311-1316
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• 2014

To be used in a transmitter of a satellite transponder of this paper, X band 25W power amplifier module, a part constituting of high-power amplifier is transmitted to the equipment for transmitting to geostationary communications satellites(36,000Km distance). PAM consisted a total of four power amplifier module has a high output characteristic of the high-output amplifier is used in the ground station. Used in conjunction with the structured type power amplifier module is composed of Serial Combining Structure. This PAM(Power Amplifier Module) configured by combining the circuit with the power amplifier, 10 MMIC chips and the Al2O3 thin film substrate using a Hybrid Technique of power amplifier module, was implemented at X band PAM(Power Amplifier Module) of 25W grade.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.12
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• pp.1331-1336
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• 2014

In this study, we have implemented a PAM(Power Amplifier Module) with 25W output power using by cooperate divider/Combiner circuit in X-band to minimize combine loss on a Al2O3 substrate. The PAM(Power Amplifier Module) is consisted of MMIC and 10way traveling wave divider/Combiner with proposed structure what have showed that 45.2dBm output power, 16dB gain, PAE 26 % and 17dBc@44dBm IMD3 characteristics. This combine/divider structure can be used when multistage passive divider and combiner needs. especially, power amplifier with very compact size.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.4
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• pp.61-69
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• 2003

Cellular network을 이용하는 휴대 단말기의 경우 TDMA(GSM, IS-136), CDMA(IS-95) 그리고 WCD-MA 등을 포함해서 년간 약 4억대 정도 생산되고 있고, PAM(Power Amplifier Module)은 단말기 한 대당 1~2개 정도 사용되며, 단말기의 battery 사용시간과 밀접한 관련이 있다. 또한 antenna front-end에 장착되기 때문에, 신호의 왜곡에 의한 인접채널 누설 전력과 harmonic 등 전기적인 규격의 적합성과 ESD, 습기 등 품질 신뢰성 문제에 직접적인 영향을 주는 중요한 부품 중의 하나이다. 이로 인하여 PAM의 핵심 기능을 담당하는 PA IC의 공정 기술과 설계 기술, PAM제조 기술 등의 향상에 대한 많은 연구와 개발이 이루어졌다. 본 고에서는 PAM의 최근 기술 동향과 기능적으로 PAM이 주변 수동 및 능동 부품과 집적화 되고 있는 복합 모듈의 동향에 대해서 기술한다.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.1
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• pp.50-54
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• 2011

In this article, the linearity of single power amplifier is improved by suppress $2^{nd}$ and $3^{rd}$ harmonics at output port of high power amplifier and by cancelling of $3^{rd}$ IMD. The matching network in order to suppress harmonics consists of metamaterial like the CRLH. The $2^{nd}$ and $3^{rd}$ harmonics are suppressed over 27 dBc, respectively. A phase of generated $3^{rd}$ IMD at output of DPA (drive power amplifier) has changed in order to offset the $3^{rd}$ IMD of HPA (high power amplifier). The harmonics of the proposed PAM suppress over 6 dB than single HPA. The PAM has a 36.98 dBm of the output power, 21.6 dB of the power gain and 29.4 % of the PAE. The harmonics is a -53 dBc about PAM. This result indicate that a harmonic level is lower 20 dB than reference power amplifier.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.13-18
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• 2000

Low temperature co-fired ceramics on metal (LTCC-M) is efficient for embedding passive components with good tolerance in a module due to the dimensional stability in x and y directions by the constraint of metal core during the firing. In addition, the radiation noise can be reduced by metal core. In this paper, embedded passive components were introduced and a power amplifier module (PAM) fabricated by using the passive components was explained. The embedded passive components in test patters showed the tolerance of 10~20% and the good repeatability in tolerance of embedded passives was maintained in module fabrication. The shortened traces in multi chip modules (MCMs) make the signal delay time decreased and the embedded passives simplify the packaging processes owing to the less solder points, which enhance the electrical performance and increase the reliability of the modules. The LTCC-M technology is one of the promising candidates for RF application and is expected to expand its applications to power and high performance devices.

• Journal of Applied Reliability
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• v.9 no.3
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• pp.233-248
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• 2009

PAM(Power Amplifier Module) is the important part of a mobile phone transmitter. It amplifies the strength of signal transmitting from a mobile phone to base stations enough to resist noise or interference. In this paper reliability assessment criteria for the PAM are established in terms of quality certification test and lifetime test. The former quality certification test comprises general performance test and environmental test. Items which pass the test undergo lifetime test which guarantees the extent of mean lifetime with certain confidence.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.357-358
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• 2005

Compact power amplifier modules (PAM) for WCDMA/KPCS and GSM/WCDMA dual-band applications based on multilayer low temperature co-fired ceramic (LTCC) substrates are presented in this paper. The proposed modules are composed of an InGaP/GaAs HBT PAs on top of the LTCC substrates and passive components such as RF chokes and capacitors which are embedded in the substrates. The overall size of the modules is less than 6mm $\times$ 6mm $\times$ 0.8mm. The measured result shows that the PAM delivers a power of 28 dBm with a power added efficiency (PAE) of more than 30 % at KPCS band. The adjacent-channel power ratio (ACPR) at 1.25-MHz and 2.25-MHz offset is -44dBc/30kHz and -60dBc/30kHz, respectively, at 28-dBm output power. Also, the PAM for WCDMA band exhibits an output power of 27 dBm and 32-dB gain at 1.95 GHz with a 3.4-V supply. The adjacent-channel leakage ratio (ACLR) at 5-MHz and 10-MHz offset is -37.5dBc/3.84MHz and -48dBc/3.84MHz, respectively. The measured result of the GSM PAM shows an output power of 33.4 dBm and a power gain of 30.4 dB at 900MHz with a 3.5V supply. The corresponding power added efficiency (PAE) is more than 52.6 %.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.8
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• pp.744-751
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• 2004

This paper presents the implementation of the low cost and high speed RF ATE(Automatic Test Equipment) system, which can be a reasonable solution for reducing the test cost of RF devices. This paper suggests high speed and precise measurement capabilities which are realized by the 16 independent RF ports with high speed switching time and high accuracy digitizer using the industry standard Versus module eXtensions for Instrument(VXI) General Purpose Interface Bus(GPIB) interfaces. Also, the system has the capabilities of quad-site test which can dramatically increase the device throughput. This paper concludes with the demonstration of the implemented ATE system through the setup of RF Power Amplifier Module(PAM), which is under the most competitive market situation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.9 s.112
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• pp.883-889
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• 2006

In this paper, parasitic resonance modes generated in a conductor backed coplanar wave guide(CBCPW) and stripline band pass filter(BPF) and the oscillation phenomena of a 40 GHz power amplifier module(PAM) are analyzed and several methods to suppress them are presented for low-temperature co-fired ceramic(LTCC) based millimeter-wave RF System-in-Package(SiP) applications. Parasitic rectangular wave guide(RWG) modes of the CBCPW structure are completely suppressed in the operation frequency band by decreasing the distance between its vias and by increasing the mode frequency. In the stripline structure, RWG resonance modes are clearly eliminated by removing some vias facing each other and by placing them diagonally. In the case of the 40 GHz PAM, in order to reduce a cross talk due to radiation that is generated from interconnection discontinuities, high isolation structures such as embedded DC bas lines and CPW signal lines are used and then the oscillated PAM is improved.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.178-182
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• 2003

This paper presents the embedded inductors in PCB (Printed Circuit Board) for PAM(Power Amplifier Module) of mobile terminations. The inductors are designed, simulated, and compared to conventional chip inductors. The Quality factor(Q) and self-resonance frequency(SRF) of the inductors are evaluated. The quality factors of the inductors are two times higher than those of the chip inductors, and the self-resonance frequency is 1.3 times higher than those of chip inductors at the inductance of 2.7 nH and 3.3 nH respectively.