• Title/Summary/Keyword: Power Added Efficiency

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Design of High Efficiency CMOS Class E Power Amplifier for Bluetooth Applications

  • Chae Seung Hwan;Choi Young Shig;Choi Hyuk Hwan;Kim Sung Woo;Kwon Tae Ha
    • Proceedings of the IEEK Conference
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    • 2004.08c
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    • pp.499-502
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    • 2004
  • A two-stage Class E power amplifier operated at 2.44GHz is designed in 0.25-$\mu$m CMOS process for Class-l Bluetooth application. The power amplifier employs c1ass-E topology to exploit its soft-switching property for high efficiency. A preamplifter with common-mode configuration is used to drive the output-stage of Class-E type. The amplifier delivers 20-dBm output power with 70$\%$ PAE (power -added-efficiency) at 2-V supply voltage.

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4H-SiC MESFET Large Signal Modeling using Modified Materka Model (Modified Materka Model를 이용한 4H-SiC MESFET 대신호 모델링)

  • 이수웅;송남진;범진욱
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.6
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    • pp.890-898
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    • 2001
  • 4H-SiC(silicon carbide) MESFET large signal model was studied using modified Materka-Kacprzak large signal MESFET model. 4H-SiC MESFET device simulation have been conducted by Silvaco\`s 2D device simulator, ATLAS. The result is modeled using modified Materka large signal model. simulation and modeling results are -8 V pinch off voltage, under V$\_$GS/=0 V, V$\_$DS/=25 V conditions, I$\_$DSS/=270 mA/mm, G$\_$m/=52.8 ms/mm were obtained. Through the power simulation 2 GHz, at the bias of V$\_$GS/-4 V md V$\_$DS/=25 V, 10 dB Gain, 34 dBm (1dB compression point)output porter, 7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.d.

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Efficiency Improvement of Power Amplifier Using a Digitally-Controlled Dynamic Bias Switching for LTE Base Station (Digitally-Controlled Dynamic Bias Switching을 이용한 LTE 기지국용 전력증폭기의 효율 개선)

  • Seo, Mincheol;Lee, Sung Jun;Park, Bonghyuk;Yang, Youngoo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.8
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    • pp.795-801
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    • 2014
  • This paper presents an efficiency enhancement for the high power amplifier using DDBS(Digitally-controlled Dynamic Bias Switching) method which dynamically provides the power amplifier with two bias voltage levels according to the input envelope signal. It is quite easy to adjust the control signal by using a digital processing. The fabricated DDBS PA was evaluated using an 64 QAM FDD LTE signal, which has a center frequency of 2.6 GHz, a bandwidth of 10 MHz and a PAPR of 9.5 dB. The DDBS increases the power amplifier's PAE(Power-Added Efficiency) from 40.9 % to 48 %, at an average output power level of 43 dBm.

Development of a 2.14-GHz High Efficiency Class-F Power Amplifier (2.14-GHz 대역 고효율 Class-F 전력 증폭기 개발)

  • Kim, Jung-Joon;Moon, Jung-Hwan;Kim, Jang-Heon;Kim, Il-Du;Jun, Myoung-Su;Kim, Bum-Man
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.8
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    • pp.873-879
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    • 2007
  • We have implemented a highly efficient 2.14-GHz class-F amplifier using Freescale 4-W peak envelope power(PEP) RF Si lateral diffusion metal-oxide-semiconductor field effect transistor(LDMOSFET). Because the control of the all harmonic contents is very difficult, we have managed only the $2^{nd}\;and\;3^{rd}$ harmonics to obtain the high efficiency with simple harmonic control circuit. In order to design the harmonic control circuit accurately, we extracted the bonding wire inductance and drain-source capacitance which are dominant parasitic and package effect components of the device. And then, we have fabricated the class-F amplifier. The measured drain and power-added efficiency are 65.1 % and 60,3 %, respectively.

13.56 MHz High Efficiency Class E Power Amplifier with Low Drain Voltage (낮은 드레인 전압을 가지는 13.56 MHz 고효율 Class E 전력증폭기)

  • Yi, Yearin;Jeong, Jinho
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.6
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    • pp.593-596
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    • 2015
  • In this paper, we design a high efficiency class E power amplifier operating at low drain bias voltage for wireless power transfers. A 13.56 MHz power amplifier is designed at drain bias voltage of 12.5 V using Si MOSFET with the breakdown voltage of 40 V. High quality-factor solenoidal inductor is designed and fabricated for use in output matching circuit to improve output power and efficiency. Input matching circuit simply consists of resistor and inductor to reduce the circuit area and improve the stability. The fabricated power amplifier shows the measured output power of 38.6 dBm with the gain of 16.6 dB and power added efficiency of 89.3 % at 13.56 MHz.

Platinum and carbon nano tube addition in carbon black counter electrode for dye-sensitized solar cells

  • Lee, Su Young;Kim, Sang Ho
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.05a
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    • pp.229-230
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    • 2012
  • Platinum (Pt) has been commonly used as a counter electrode material in dye-sensitized solar cells, because it has high catalytic activity and electric conductivity as well as chemical inertness with iodide electrolyte. However, Pt is too expensive to be commercialized. Therefore, in the present study, carbon black counter electrode with Pt and carbon nano tube (CNT) was investigated. The power conversion efficiency with Pt added carbon black electrode was lower than hat of pure Pt electrode which was 6.47 %. By adding 3 wt% Pt to the carbon black counter electrode, the power conversion efficiency was maximized at 5.88 %. On them, additional adding of 1 wt % CNT, the power conversion efficiency (${\eta}$)wasincreasedupto6.21%. The reason of power conversion efficiency improvement with a proper amount of Pt and CNT was examined by comparing the impedance properties measured using EIS.

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Class E Power Amplifiers using High-Q Inductors for Loosely Coupled Wireless Power Transfer System

  • Yang, Jong-Ryul;Kim, Jinwook;Park, Young-Jin
    • Journal of Electrical Engineering and Technology
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    • v.9 no.2
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    • pp.569-575
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    • 2014
  • A highly efficient class E power amplifier is demonstrated for application to wireless power transfer system. The amplifier is designed with an L-type matching at the output for harmonic rejection and output matching. The power loss and the effect of each component in the amplifier with the matching circuit are analyzed with the current ratio transmitted to the output load. Inductors with a quality factor of more than 120 are used in a dc feed and the matching circuit to improve transmission efficiency. The single-ended amplifier with 20 V supply voltage shows 7.7 W output power and 90.8% power added efficiency at 6.78 MHz. The wireless power transfer (WPT) system with the amplifier shows 5.4 W transmitted power and 82.3% overall efficiency. The analysis and measurements show that high-Q inductors are required for the amplifier design to realize highly efficient WPT system.

Effect of Ultrasonic Energy in the Engine using Diesel Fuel Blended Rape-seed Oil (유채혼합유를 사용하는 기관에서 초음파에너지의 영향)

  • Kwon, K.R.;Ko, K.N.
    • Journal of Power System Engineering
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    • v.9 no.4
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    • pp.5-10
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    • 2005
  • The effect of ultrasonic energy for diesel fuel and blend oil has been revealed in this paper. The experimental setup consisted of a high speed diesel engine with 4 cylinder, dynamometer and ultrasonic fuel feeding system. Ultrasonic energy was added to diesel fuel and blend oil, which is a blend of diesel fuel and rape-seed oil. As engine speed was changed, engine torque and power, brake specific fuel consumption and thermal efficiency were measured in detail. As the results, by adding ultrasonic energy to diesel fuel and blend oil, the engine performance was improved in range of the experiment. The effect of improvement on brake specific fuel consumption and thermal efficiency for blend oil is higher than that for diesel fuel. When ultrasonic energy was added to diesel fuel or blend oil, a rise in engine torque for diesel fuel was higher than that for blend oil, but the effect of ultrasonic energy was small. From these results, it may be desirable to add ultrasonic energy to blend oil for the use of blend oil to diesel engine.

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High Efficiency GaN HEMT Power Amplifier Using Harmonic Matching Technique (고조파 정합 기법을 이용한 고효율 GaN HEMT 전력 증폭기)

  • Jin, Tae-Hoon;Kwon, Tae-Yeop;Jeong, Jinho
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.1
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    • pp.53-61
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    • 2014
  • In this paper, we present the design, fabrication and measurement of high efficiency GaN HEMT power amplifier using harmonic matching technique. In order to achieve high efficiency, harmonic load-pull simulation is performed, that is, the optimum load impedances are determined at $2^{nd}$ and $3^{rd}$ harmonic frequencies as well as at the fundamental. Then, the output matching circuit is designed based on harmonic load-pull simulation. The measurement of the fabricated power amplifier shows the linear gain of 20 dB and $P_{1dB}$(1 dB gain compression point) of 33.7 dBm at 1.85 GHz. The maximum power added efficiency(PAE) of 80.9 % is achieved at the output power of 38.6 dBm, which belongs to best efficiency performance among the reported high efficiency power amplifiers. For W-CDMA input signal, the power amplifier shows a PAE of 27.8 % at the average output power of 28.4 dBm, where an ACLR (Adjacent Channel Leakage Ratio) is measured to be -38.8 dBc. Digital predistortion using polynomial fitting was implemented to linearize the power amplifiers, which allowed about 6.2 dB improvement of an ACLR performance.

1.9-GHz CMOS Power Amplifier using Adaptive Biasing Technique at AC Ground

  • Kang, Inseong;Yoo, Jinho;Park, Changkun
    • Journal of information and communication convergence engineering
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    • v.17 no.4
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    • pp.285-289
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    • 2019
  • A 1.9-GHz linear CMOS power amplifier is presented. An adaptive bias circuit (ABC) that utilizes an AC ground to detect the power level of the input signal is proposed to enhance the linearity and efficiency of the power amplifier. The ABC utilizes the second harmonic component as the input to mitigate the distortion of the fundamental signal. The input power level of the ABC was detected at the AC ground located at the VDD node of the power amplifier. The output of the ABC was fed into the inputs of the power stage. The input signal distortion was mitigated by detecting the input power level at the AC ground. The power amplifier was designed using a 180 nm RFCMOS process to evaluate the feasibility of the application of the proposed ABC in the power amplifier. The measured output power and power-added efficiency were improved by 1.7 dB and 2.9%, respectively.