• Journal of Sensor Science and Technology
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• v.18 no.3
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• pp.222-225
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• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C-SiC thin films grown on Si substrates with thermal oxide layer using APCVD. Pd/poly 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about 400 $^{\circ}$. The characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate, and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature $H_2$ sensor applications.

• Journal of Sensor Science and Technology
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• v.17 no.6
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• pp.414-417
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• 2008

This paper describes the fabrication of a Pd/poly 3C-SiC Schottky diode and its characteristics, in which the poly 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Bulletin of the Korean Chemical Society
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• v.18 no.11
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• pp.1175-1179
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• 1997

The adsorption of oxygen on ZnO was monitored by measuring the capacitance of two contacting crystals which have depletion layers originated from the interaction between oxygen and ZnO at 298 K-473 K. An admission of oxygen to the sample induced an irreversible increase in the depth and the amount of adsorbed oxygen was less than 0.001 monolayer in the experimental condition. The relation between pressure of oxygen and variation of the depth was tested from the view point of Langmuir or Freundlich isotherm. Using Hall effect measurement and kinetic experiment, a model equation on the adsorption process was proposed. From the results, it was suggested that oxygen adsorption depended on the rate of electron transfer from ZnO to oxygen while the amount of adsorbed oxygen was kinetically restricted by the height of surface potential barrier.

• Journal of the Korean Ceramic Society
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• v.56 no.1
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• pp.84-90
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• 2019

The varistor properties and stability against dc-accelerated stress of $V_2O_5-Mn_3O_4-Co_3O_4-Dy_2O_3-Nb_2O_5-Bi_2O_3$ (VMCDNB)-doped zinc oxide ceramics sintered at $850-925^{\circ}C$ were investigated. Increasing the sintering temperature increased the average grain size from 4.6 to 8.7 mm and decreased the density of the sintered pellet density from 5.54 to $5.42g/cm^3$. The breakdown field decreased from 5919 to 1465 V/cm because of the increase in the average grain size. Zinc oxide ceramics sintered at $875^{\circ}C$ showed the highest nonlinear coefficient (43.6) and the highest potential barrier height (0.96 eV). Zinc oxide ceramics sintered at $850^{\circ}C$ showed the highest stability: the variation rate of the breakdown field was -2.0% and the variation rate of the nonlinear coefficient was -23.3%, after application of the specified stress (applied voltage/temperature/time).

• Journal of Electrical Engineering and Technology
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• v.1 no.3
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• pp.396-405
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• 2006

The visual analysis of buried channel (Be) devices such as buried channel MOSFETs and CCDs (Charge Coupled Devices) is investigated to give better understanding and insight for their electrical behaviours using a 3-dimensional (3-D) numerical simulation. This paper clearly demonstrates the capability of the numerical simulation of 'EVEREST' for characterising the analysis of a depletion mode MOSFET and BC CCD, which is a simulation software package of the semiconductor device. The inverse threshold and punch-through voltages obtained from the simulations showed an excellent agreement with those from the measurement involving errors of within approximately 1.8% and 6%, respectively, leading to the channel implanted doping profile of only approximately $4{\sim}5%$ error. For simulation of a buried channel CCD an advanced adaptive discretising technique was used to provide more accurate analysis for the potential barrier height between two channels and depletion depth of a deep depletion CCD, thereby reducing the CPU running time and computer storage requirements. The simulated result for the depletion depth also showed good agreement with the measurement. Thus, the results obtained from this simulation can be employed as the input data of a circuit simulator.

• Bulletin of the Korean Chemical Society
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• v.30 no.12
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• pp.2973-2978
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• 2009

The decomposition reaction mechanism of $CH_3CF_2O$ radical formed from hydroflurocarbon, $CH_3CHF_2$ (HFC-152a) in the atmosphere has been investigated using ab-initio quantum mechanical methods. The geometries of the reactant, products and transition states involved in the decomposition pathways have been optimized and characterized at DFT-B3LYP and MP2 levels of theories using 6-311++G(d,p) basis set. Calculations have been carried out to observe the effect of basis sets on the optimized geometries of species involved. Single point energy calculations have been performed at QCISD(T) and CCSD(T) level of theories. Out of the two prominent decomposition channels considered viz., C-C bond scission and F-elimination, C-C bond scission is found to be the dominant path involving a barrier height of 12.3 kcal/mol whereas the F-elimination path involves that of a 28.0 kcal/mol. Using transition-state theory, rate constant for the most dominant decomposition pathway viz., C-C bond scission is calculated at 298 K and found to be 1.3 ${\times}$ 10$^4s{-1}$. Transition states are searched on the potential energy surfaces involving both decomposition channels and each of the transition states are characterized. The existence of transition states on the corresponding potential energy surface are ascertained by performing Intrinsic Reaction Coordinate (IRC) calculation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.799-804
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• 2016

To analyze the phenomenon of drain induced barrier lowering(DIBL) for top and bottom gate oxide thickness of asymmetric double gate MOSFET, the deviation of threshold voltage is investigated for drain voltage to have an effect on barrier height. The asymmetric double gate MOSFET has the characteristic to be able to fabricate differently top and bottom gate oxide thickness. DIBL is, therefore, analyzed for the change of top and bottom gate oxide thickness in this study, using the analytical potential distribution derived from Poisson equation. As a results, DIBL is greatly influenced by top and bottom gate oxide thickness. DIBL is linearly decreased in case top and bottom gate oxide thickness become smaller. The relation of channel length and DIBL is nonlinear. Top gate oxide thickness more influenced on DIBL than bottom gate oxide thickness in the case of high doping concentration in channel.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.7
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• pp.1463-1469
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• 2012

This paper has presented the influence of scaling theory on short channel effects of double gate(DG) MOSFET in subthreshold region. In the case of conventional MOSFET, to preserve constantly output characteristics,current and switching frequency have been analyzed based on scaling theory. To analyze the results of application of scaling theory for short channel effects of DGMOSFET, the changes of threshold voltage, drain induced barrier height and subthreshold swing have been observed according to scaling factor. The analytical potential distribution of Poisson equation already verified has been used. As a result, it has been observed that threshold voltage among short channel effects is grealty changed according to scaling factor. The best scaling theory for DGMOSFET has been explained as using modified scaling theory, applying weighting factor reflected the influence of two gates when scaling theory has been applied for channel length.

• Korean Journal of Materials Research
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• v.27 no.1
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• pp.48-52
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• 2017

In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/$HfO_2$/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of $HfO_2$. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/$HfO_2$/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/$HfO_2$/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.

• Earthquakes and Structures
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• v.11 no.6
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• pp.983-1000
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• 2016

To date the engineering community has seen facade systems as non-structural elements with high aesthetic value and a barrier between the outdoor and indoor environments. The role of facades in energy use in a building has also been recognized and the industry is also witnessing the emergence of many energy efficient facade systems. This paper will focus on using exterior skin of the double skin facade system as a dissipative movable element during earthquake excitation. The main aim of this study is to investigate the potential of the facade system to act as a damper system to reduce earthquake-induced vibration of the primary structure. Unlike traditional mass dampers, which are usually placed at the top level of structures, the movable/smart double skin facade systems are distributed throughout the entire height of building structures. The outer skin is moveable and can act as a multi tuned mass dampers (MTMDs) that move and dissipate energy during strong earthquake motions. In this paper, using a three dimensional 10-storey building structure as the example, it is shown that with optimal choice of materials for stiffness and damping of brackets connecting the two skins, a substantial portion of earthquake induced vibration energy can be dissipated which leads to avoiding expensive ductile seismic designs. It is shown that the engineering demand parameters (EDPs) for a low-rise building structures subjected to moderate to severe earthquakes can be substantially reduced by introduction of a smart designed double skin system.