• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.3
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• pp.331-336
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• 2013

In this paper, plasma modeling is achieved using fluid dynamics, thereby electron density is derived. The way proposes the key to overcoming the limitations of conventional researches which adopt simplified plasma model. The result is coupled with Maxwell-Boltzmann system in order to calculate scattering waves in various incident angle. The first part is dedicated to perform plasma modeling in dielectric barrier discharge(DBD) structure. Suzen-Huang model is adopted among various models due to the fact that it uses time independent variables to calculated potential and electron distribution in static system. The second part deals with finite difference time domain(FDTD) scheme which computes the scattered waves when the modulated Gaussian pulse is incident. Founded on it, radar cross section(RCS) is observed. Consequently, RCS is decreased by 1~2 dB with DBD plasma. The result is analogous to the RCS measurement in other researches.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.1
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• pp.21-25
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• 2017

In this study, we have fabricated Schottky barrier diodes (SBD) on single-crystal ${\beta}-Ga_2O_3$ semiconductor that has received much attention for use in next-generation power devices. The SBD had a Pt/Ti/Au Schottky contact on a $2{\mu}m$ Sn-doped low concentration N-type epitaxial layer. The fabricated device exhibited a breakdown voltage of > 180 V, a specific on-resistance of $1.26m{\Omega}{\cdot}cm^2$, and forward current densities of $77A/cm^2$ at 1 V and $473A/cm^2$ at 1.5 V, which proved the potential for use in power device fabrication.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.203-212
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• 2010

In this paper, we present an analytical model for the first eigen energy level ($E_0$) of the carriers in the inversion layer in present generation MOSFETs, having ultrathin gate oxides and high substrate doping concentrations. Commonly used approaches to evaluate $E_0$ make either or both of the following two assumptions: one is that the barrier height at the oxide-semiconductor interface is infinite (with the consequence that the wave function at this interface is forced to zero), while the other is the triangular potential well approximation within the semiconductor (resulting in a constant electric field throughout the semiconductor, equal to the surface electric field). Obviously, both these assumptions are wrong, however, in order to correctly account for these two effects, one needs to solve Schrodinger and Poisson equations simultaneously, with the approach turning numerical and computationally intensive. In this work, we have derived a closed-form analytical expression for $E_0$, with due considerations for both the assumptions mentioned above. In order to account for the finite barrier height at the oxide-semiconductor interface, we have used the asymptotic approximations of the Airy function integrals to find the wave functions at the oxide and the semiconductor. Then, by applying the boundary condition at the oxide-semiconductor interface, we developed the model for $E_0$. With regard to the second assumption, we proposed the inclusion of a fitting parameter in the wellknown effective electric field model. The results matched very well with those obtained from Li's model. Another unique contribution of this work is to explicitly account for the finite oxide-semiconductor barrier height, which none of the reported works considered.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.9
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• pp.2000-2006
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• 2011

In this paper, the drain induced barrier lowering(DIBL) for doping distribution in the channel has been analyzed for double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studing because of adventages to be able to reduce the short channel effects(SCEs) to occur in convensional MOSFET. DIBL is SCE known as reduction of threshold voltage due to variation of energy band by high drain voltage. This DIBL has been analyzed for structural parameter and variation of channel doping profile for DGMOSFET. For this object, The analytical model of Poisson equation has been derived from Gaussian doping distribution for DGMOSFET. To verify potential and DIBL models based on this analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and DIBL for DGMOSFET has been investigated using this models.

• Journal of Powder Materials
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• v.18 no.6
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• pp.568-574
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• 2011

As operating temperatures of engines or turbines continually increase for higher efficiency, significant amounts of researches have been focused on finding new materials, which would be alternatives to conventional yttria-stabilized zirconia (YSZ) for thermal barrier coatings (TBCs). In this study, phase evolution and thermo-physical properties of $La_2(Zr_{1-x}Hf_x)_2O_7$ pyrochlore systems are investigated for TBC applications. $La_2(Zr_{1-x}Hf_x)_2O_7$ systems are comprised by selecting $La^{3+}$ as A-site ions and $Zr^{4+}/Hf^{4+}$ as B-site ions in $A_2B_2O_7$ pyrochlore structures. For the developed phases in $La_2(Zr_{1-x}Hf_x)_2O_7$ compositions, thermo-physical properties such as thermal conductivity, thermal expansion coefficient are examined. The potential of these $La_2(Zr_{1-x}Hf_x)_2O_7$ compositions for TBC application is also discussed.

• Preventive Nutrition and Food Science
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• v.20 no.1
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• pp.15-21
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• 2015

The skin plays a key role in protecting the body from the environment and from water loss. Cornified envelope (CE) and natural moisturizing factor (NMF) are considered as the primary regulators of skin hydration and barrier function. The CE prevents loss of water from the body and is formed by cross-linking of several proteins. Among these proteins, filaggrin is an important protein because NMF is produced by the degradation of filaggrin. Proteases, including matriptase and prostasin, stimulate the generation of filaggrin from profilaggrin and caspase-14 plays a role in the degradation of filaggrin. This study elucidated the effects of an ethanol extract of Boesenbergia pandurata (Roxb.) Schltr., known as fingerroot, and its active compound panduratin A on CE formation and filaggrin processing in HaCaT, human epidermal keratinocytes. B. pandurata extract (BPE) and panduratin A significantly stimulated not only CE formation but also the expression of CE proteins, such as loricrin, involucrin, and transglutaminase, which were associated with $PPAR{\alpha}$ expression. The mRNA and protein levels of filaggrin and filaggrin-related enzymes, such as matriptase, prostasin, and caspase-14 were also up-regulated by BPE and panduratin A treatment. These results suggest that BPE and panduratin A are potential nutraceuticals which can enhance skin hydration and barrier function based on their CE formation and filaggrin processing.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.4
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• pp.659-665
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• 2017

Power semiconductor devices required the low on-resistance and high breakdown voltage. Wide band-gap materials opened a new technology of the power devices which promised a thin drift layer at an identical breakdown voltage. The diamond had the wide band-gap of 5.5 eV which induced the low power loss, high breakdown capability, low intrinsic carrier generation, and high operation temperature. We investigated the p-type pseudo-vertical diamond Schottky barrier diodes using a numerical simulation. The impact ionization rate was material to calculating the breakdown voltage. We revised the impact ionization rate of the diamond for adjusting the parallel-plane breakdown field at 10 MV/cm. Effects of the field plate on the breakdown voltage was also analyzed. A conventional diamond Schottky barrier diode without field plate exhibited the high forward current of 0.52 A/mm and low on-resistance of $1.71{\Omega}-mm$ at the forward voltage of 2 V. The simulated breakdown field of the conventional device was 13.3 MV/cm. The breakdown voltage of the conventional device and proposed devices with the $SiO_2$ passivation layer, anode field plate (AFP), and cathode field plate (CFP) was 680, 810, 810, and 1020 V, respectively. The AFP cannot alleviate the concentration of the electric field at the cathode edge. The CFP increased the breakdown voltage with evidences of the electric field and potential. However, we should consider the dielectric breakdown because the ideal breakdown field of the diamond is higher than that of the $SiO_2$, which is widely used as the passivation layer. The real breakdown voltage of the device with CFP decreased from 1020 to 565 V due to the dielectric breakdown.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.260-260
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• 2014

Dermatophytes can invade in keratinized tissues and cause dermatophytosis [1] that rank among the most widespread and common infectious diseases world-wide. Although several systemically and topically administered drugs with activities against these fungi are available, still complete eradication of some of these infections, is difficult and relapses and remissions are often observed [2,3]. In addition, some people are allergic to many of the available drugs which add complications even more. Therefore, the search for novel, selective and more effective therapy is always required and it may help the clinicians to choose the correct treatment for their patients. Non-thermal plasmas primarily generate reactive species and recently have emerged as an efficient tool for medical applications including sterilization. In this study, we evaluated the ability of non-thermal dielectric barrier discharge (DBD) plasma for the inactivation of clinical isolates of Trichophyton genera, Trichophyton mentagrophytes (T. mentagrophytes) and Trichophyton rubrum (T. rubrum), which cause infections of nails and skin and, are two of the most frequently isolated dermatophytes [4]. Our results showed that DBD plasma has considerable time dependent inactivation potential on both T. mentagrophytes and T. rubrum in-vitro. Furthermore, the mechanisms for plasma based T. mentagrophytes and T. rubrum inactivation and planning for in-vivo future studies will be discussed.

• Biomolecules & Therapeutics
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• v.16 no.1
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• pp.14-20
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• 2008

In the present study, we examined how the transport of choline is regulated at the blood-brain barrier (BBB) under the central nervous system (CNS) cellular damages by oxidative stress using a conditionally immortalized rat brain capillary endothelial cells (TR-BBB), in vitro the BBB model. It was also tested whether the choline uptake is influenced by membrane potential, extracellular pH, protonophore (FCCP) and amiloride in TR-BBB cells. In result, $[^3H]choline$ uptake was inhibited by FCCP and dependent on extracellular pH. The treatment of TR-BBB cells with 20 ng/mL tumor necrosis $factor-{\alpha}$ $(TNF-{\alpha})$, 10 ng/mL lipopolysaccharide (LPS), 100 ${\mu}M$ diethyl maleate (DEM) and 100 ${\mu}M$ glutamate resulted in 3.0-fold, 2.6-fold, 1.8-fold and 2.0-fold increases of $[^3H]choline$ uptake at the respective peak time, respectively. In contrast, hydrogen peroxide and raffinose did not show any significant effects on choline uptake. In addition, choline efflux was significantly inhibited by $TNF-{\alpha}$, LPS and DEM producing cell damage states. In conclusion, the influx and efflux transport system for choline existed in TR-BBB cell line and this process was affected by several oxidative stress inducing agents.

• Fire Science and Engineering
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• v.28 no.6
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• pp.108-113
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• 2014

The combined process of Sliding Arc Plasma and corona dielectric barrier discharge process (CDBD) was used to efficiently improve harmful substance, which convert into OH radicals which have strong oxidation potential, and so have deodorization and sterilizing effects, by generating specific radicals and anion and then reacting with the moisture contained in harmful substance. As a result of experiment, even if the size of SAP reactor is reduced from 80 A to 50 A, there is no much change and therefore it is judged the size of reactor may be minimized. And it was confirmed that after the anion and ozone generated from CDBD rector react with harmful substance, a anion was reduced from 510,000 ppb to 470 ppb and ozone from 98 ppb to 22 ppb. It was also judged the stability and durability of plasma producer are excellent. Accordingly, it is considered the harmful substances which exist in indoor air quality will be efficiently improved and removed by using further plasma combined process through this study.