• Title/Summary/Keyword: Postexposure bake

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Near-field Optical Lithography for High-aspect-ratio Patterning by Using Electric Field Enhanced Postexposure Baking (전기장이 적용된 노광후굽기 공정에 의한 고종횡비 근접장 광 리소그래피)

  • Kim, Seok;Jang, Jin-Hee;Kim, Yong-Woo;Jung, Ho-Won;Hahn, Jae-Won
    • Korean Journal of Optics and Photonics
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    • v.21 no.6
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    • pp.241-246
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    • 2010
  • In this paper, we propose an electric field enhanced postexposure baking (EFE-PEB) method to obtain deep and high aspect ratio pattern profile in near-field recording. To describe the photoacid distribution under an external electric field during the PEB, we derived the governing equations based on Fick's second law of diffusion. From the results of the numerical calculations, it is found that the vertical movement of photoacid increases while the lateral movement is stationary as electric field varies from 0 to $8.0{\times}10^6\;V/m$. Also, it is proven that the profile of near-field recording is improved by using the EFE-PEB method with increased depth, higher aspect ratio and larger sidewall angle.