• 한국전기전자재료학회논문지
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• 제30권5호
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• pp.276-283
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• 2017

A polysilicon-based metal-semiconductor-metal (MSM) photodetector was fabricated by means of our new methods. Its photoresponse characteristics were analyzed to see if it could be applied to a sensor system. The processes on which this study focused were an alloy-annealing process to form metal-polysilicon contacts, a post-annealing process for better light absorption of as-deposited polysilicon, and a passivation process for lowering defect density in polysilicon. When the alloy annealing was achieved at about $400^{\circ}C$, metal-polysilicon Schottky contacts sustained a stable potential barrier, decreasing the dark current. For better surface morphology of polysilicon, rapid thermal annealing (RTA) or furnace annealing at around $900^{\circ}C$ was suitable as a post-annealing process, because it supplied polysilicon layers with a smoother surface and a proper grain size for photon absorption. For the passivation of defects in polysilicon, hydrogen-ion implantation was chosen, because it is easy to implant hydrogen into the polysilicon. MSM photodetectors based on the suggested processes showed a higher sensitivity for photocurrent detection and a stable Schottky contact barrier to lower the dark current and are therefore applicable to sensor systems.

• 전자공학회논문지A
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• 제30A권7호
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• pp.47-59
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• 1993

16M DRAM 용 Al/Si contact 의 열적안정성을 개선하기 위하여 "stuffed" TiN/Ti diffusion barrier를 사용하였다. Diffusion barrier 로서의 특성을 개선하기 위한 Al 증착전 TiN/Ti barrier metal의 열처리 과정중 barrier metal의 두께, 열처리온도, 분위기 등을 변화시켰다. 질소분위기하에서 450도에서 TiN(900A)/Ti(300A) 박막을 열처리 하여 "stuffed" barrier metal을 형성 시켰을 경우 Al 원자의 TiN층으로의 확산의 600도에서 후속열처리한 경우 일어났으나, 700도까지도 Al-spike를 관찰할 수 없었다. 그러나 "stuffed" barrier metal을 550도에서 형성한 경우에는 600도의 후속열처리온도에서 Al이 Si 기판으로 침투했음을 관찰하였다. 박막의 두께를 얇게한 경우, 600도의 후속 열처리에서 Al-spike가 형성되었음을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.169-169
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• 2010

As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates. $InGaZnO_4$(IGZO) has gathered much attention as a post-transition metal oxide used in active layer in thin-film transistor. Due to its high mobility fabricated at low temperature fabrication process, which is proper for application to display backplanes and use in flexible and/or transparent electronics. Electrical performance of amorphous oxide semiconductors depends on the resistance of the interface between source/drain metal contact and active layer. It is also affected by sheet resistance on IGZO thin film. Controlling contact/sheet resistance has been a hot issue for improving electrical properties of AOS(Amorphous oxide semiconductor). To overcome this problem, post-annealing has been introduced. In other words, through post-annealing process, saturation mobility, on/off ratio, drain current of the device all increase. In this research, we studied on the relation between device's resistance and post-annealing temperature. So far as many post-annealing effects have been reported, this research especially analyzed the change of electrical properties by increasing post-annealing temperature. We fabricated 6 main samples. After a-IGZO deposition, Samples were post-annealed in 5 different temperatures; as-deposited, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. Metal deposition was done on these samples by using Mo through E-beam evaporation. For analysis, three analysis methods were used; IV-characteristics by probe station, surface roughness by AFM, metal oxidation by FE-SEM. Experimental results say that contact resistance increased because of the metal oxidation on metal contact and rough surface of a-IGZO layer. we can suggest some of the possible solutions to overcome resistance effect for the improvement of TFT electrical performances.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.274-277
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• 2000

Thin Film Transistor(TFTs) were fabricated from poly-Si crystallized by a two-step annealing process on glass substrates. The combination of low-temperature(500$^{\circ}C$) Metal-Induced Lateral Crystallization(MILC) furnace annealing and high -temperature (700$^{\circ}C$) rapid thermal annealing leads to the improvement of the material quality The TFTs measured with this two-step annealing material exhibit better characteristics than those obtained by using conventional MILC furnace annealing.

• 한국재료학회지
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• 제28권4호
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• pp.195-200
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• 2018

This study investigated the effects of the post annealing temperatures on the electrical and interfacial properties of a metal-semiconductor-metal photodetector(MSM-PD) device. The interdigitate type MSM-PD devices had the structure Al(500 nm) / Ti(200 nm) / poly-Si(500 nm). Structural analyses of the MSM-PD devices were performed by employing X-ray diffraction(XRD), scanning electron microscopy(SEM) and transmission electron microscope(TEM). Electrical characteristics of the MSM-PD were also examined using current-voltage(I-V) measurements. The optimal post annealing condition for the Schottky contact of MSM-PD devices are $350^{\circ}C$-30minutes. However, as the annealing temperature and time are increased, electrical characteristics of MSM-PD device are degraded. Especially, for the annealing conditions of $400^{\circ}C$-180minutes and $500^{\circ}C$-30minutes, the I-V measurement itself was impossible. These results are closely related to the solid phase reactions at the interface of MSM-PD device, which result in the formation of intermetallic compounds such as $Al_3Ti$ and $Ti_7Al_5Si_{12}$.

• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.127-130
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• 2011

We investigated the effects of $O_2$ annealing (i.e., temperature and time) on the characteristics of hafnium silicate ($HfSi_xO_y$) films deposited on a Si substrate by atomic layer deposition process (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics (e.g., hysteresis window and leakage current are decreased). In addition, we observed the annealing temperature is more important than the annealing time for post deposition annealing. Based on these observations, we suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of $HfSi_xO_y$ films deposited by ALD. However, the annealing temperature has to be carefully controlled to minimize the regrowth of interfacial oxide, which degrades the value of equivalent oxide thickness.

• 전기전자학회논문지
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• 제23권2호
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• pp.704-709
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• 2019

본 논문에서는 다양한 열처리(annealing) 조건에서 tunneling field effect transistor(TFET)의 전기적 특성을 연구 하였다. TFET 샘플은 수소 혼합 가스(4 %) 및 중수소($D_2$) 혼합 가스 (4 %)를 사용하여 열처리를 진행하였으며 측정은 노이즈 차폐실에서 진행되었다. 실험 결과, 열처리 전과 비교하여 열처리 공정 후에 subthreshold slope(SS)이 33 mV / dec만큼 감소함을 확인할 수 있었다. 그리고 측정 온도 범위에서 온도가 증가할수록 $V_G=3V$ 조건에서 10 기압의 중수소 혼합 가스에 대해 평균 31.2 %의 노이즈가 개선됨을 확인할 수 있었다. $D_2$ 혼합 가스로 메탈 증착 후 열처리 공정(post metal annealing)을 실시한 결과, $I_D=100nA$ 조건에서 평균 30.7 %의 노이즈가 감소되었음을 확인할 수 있다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.273-276
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• 2001

The origin of image-slicking in metal-insulator-metal type thin-film-diode(TFD) LCDs is the asymmetric current-voltage(I-V) characteristic of TFD element. we developed that MIM-LCDs have reduced-image-sticking and perfect symmetry characteristic. One-Time Post-Annealing (OPTA) heat treatment process was introduced to reduce the asymmetry and shift of the I-V characteristics, respectively. OPTA means that the whole layers of lower metal, insulator, and uuper metal are annealed at one time. The treatment temperatures and fabricated process of TFD element were under foot. Also, this low temperature fabricated process allows the application of plastic substrates.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.846-849
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• 2009

In this study, we manufactured polymer-LED using light emitting copolymer as the active layer. After cathode layer deposition, we did post-annealing at $150^{\circ}C$ during 10 min in $N_2$ glove box. Then, we confirmed that the efficiency of the device was significantly enhanced by post annealing process. Its value was increased from 0.18(cd/A) to 1.32(cd/A), approximately 7 times. This phenomenon is a result of improved stability between polymer and metal cathode for injection of electrons as the contact density increases.

• 한국결정성장학회지
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• 제12권5호
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• pp.247-252
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• 2002

$(Pb_{1-x}La_x)TiO_3$ (x = 0.1) 박막을 초음파분무 MOCVD법으로 ITO-coated glass 기판 위에 제조하였다. PLT 박막 제조 시 후열처리 및 seeding layer가 결정화 및 미세구조, 전기적 특성에 대한 영향을 알아보았다. 후열처리에 의하여 박막의 결정성은 향상되었고 미세구조에도 영향을 주었으며, 전기적 특성은 이들 특성의 변화에 의해서 향상되었다. 그리고 seeding layer에 의한 핵 생성자리 제공에 의하여 결정성의 향상과 grain 크기의 증가에 의하여 박막의 전기적 특성 또한 향상되었다. Seeding layer를 가지고 60분 동안 후열처리를 한 박막이 가장 우수한 전기적 특성을 나타내었으며 이 박막의 1 kHz에서 유전 상수는 213을 나타내었다.