• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.160-164
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• 2008

The Characterization of $MgB_2$ Thin Film by Slow Positron Annihilation Spectroscopy Enhance signal-to-noise ratio, slow positron coincidence Doppler Broadening method has been applied to study of characteristics of $MgB_2$ superconductor film, which were performed at 30 K and 50 K sample temperature near Tc of it. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The S-parameter values were increased then decreased while the positron implantation energies were increasing, that indicated the diffusion into the samples. The S-parameters of the anisotropic 1 ${\mu}m$ $MgB_2$ thin film which were implanted by positrons at 10 keV are 0.567 at 30 K and 0.570 at 50 K. It is believed that the positrons annihilate with normal-electrons instead of super-electrons in the $MgB_2$ superconductor.

• Journal of the Korean Vacuum Society
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• v.13 no.2
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• pp.92-98
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• 2004

DBPAS has been used to characterize atomic size defect structures in materials. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. As the samples were exposed by X-ray increasing the exposed doses from 3, 6, and 9 Gy with 6 MV and 15 MV, respectively and also irradiated by X-ray as the medical applications used for in 0, 2, 4 and 6 years. The S-parameter values were increased as increasing the exposed time and the energies, that indicated the defects generate more. The S-parameters of the samples with medical treatment is varied from 0.4932 to 0.4956.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.359-362
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• 2002

DBPAS has been used to characterize atomic level defect structures in materials. In this investigation the numerical analysis of the Doppler spectra was restricted to the determination of the shape parameter, S, defined as the ratio between the total amount of counts in a central portion of the spectrum and the total amount of counts. As samples were exposed by X-ray increasing from 3, 6, and 9 Gy with 6 MV, and 10 MV each and also by E-beam increasing the energies with 6 MeV, 9 MeV, 12 MeV, and 20 MeV. The S-parameter values were increased as increasing the exposed time and the energies. The S-parameters of the large and small size grains in $CaWO_4$ were measured. The S-parameter of the small size grains in $CaWO_4$ was resulted in larger values.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.125-126
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• 2006

We show that thermal rearrangement of glassy polymers below the thermal degradation temperature can create unexpected and large microvoids in the membranes, leading to unexpected high gas permeability with high gas selectivity. These current polymer membranes display unexpected gas permeation-separation performance. There are above the upper-bound for conventional polymer membranes for several gas pairs. In the present study, molecular simulation, BET sorption, positron annihilation lifetime spectroscopy (PALS), and gas separation experiments were performed to characterize the unusual structure-property relationship of these rigid glassy polymer membranes.

• Korean Membrane Journal
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• v.1 no.1
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• pp.8-24
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• 1999

free volume in polymers is defined as the difference of the specific volume and the volume which is not available for the particular molecular motion which is responsible or the process that is considered . Relations between free volume and viscosity free volume and diffusion coefficient are pre-sented both in the case of simple low molecular weight liquids and in the case of polymers. Molecular models and free volume models are reminded starting from the equilibrium state equation of Simha and Somcynski. The non equilibrium situations of specific volume of glass polymers below Tg are shown introducing different relaxation volume equations which involve different material's parameters and con-cept of the fictitious temperature. The diffusivity equations of Vrentas and Duda are introduced both for the glassy and rubbery states. The possibility of introducing time relaxation functions is also suggested. The importance of finding experimental evidences of the free volume is stressed. highlights of the free volume measurement methods are given in particular as to dilatometry photocromy fluorescence electron spin resonance small angle X-ray scattering positron annihilation spectroscopy.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.447-452
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• 2009

Enhance signal-to-noise ratio, Coincidence Doppler Broadening positron method has been applied to study of characteristics of BaSrFBr:Eu film sample. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The films were exposed by 0, 3, 5, and 7.5 MeV proton beams ranging from 0 to $10^{13}$ ptls. The S-parameter values were increased as increasing the exposed time and the energies, that indicated the defects generate more.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.341-347
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• 2013

The n-type and p-type silicon samples were exposed by 40.0, 3.98 MeV proton beams ranging between 0 to $20.0{\times}10^{13}protons/cm^2$. Coincidence Doppler Broadening Positron Annihilation Spectroscopy (CDBPAS) were applied to study of defect characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the gamma spectrum and the total counts of whole gamma spectrum. The S-parameter values strongly depend on the irradiated proton beam that indicated the defects generate more, rather than the energy intensity. 40 MeV irradiated proton beam in the n-type silicon at $20.0{\times}10^{13}protons/cm^2$ was larger defects than 3.98 MeV irradiated proton beam. It was analysis between the proton irradiation beams and the proton intensities of the irradiation. Because of the Bragg peak, SRIM results shows mainly in a certain depth of the sample to form the defect by the proton irradiation, rather than the defects to appear for the entire sample.