• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.894-896
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• 1999

The $\beta$-SiC+$ZrB_2$ ceramic composites were pressureless-sintered and annealed by adding 4, 8, 12wt% $Al_{2}O_{3}+Y_{2}O_{3}$(6 : 4wt%) powder as a liquid forming additives at $1800^{\circ}C$ for 4h. The relative density is over 79.3% of the theoretical density and phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H, 4H), $ZrB_2$, $Al_{5}Y_{2}O_{12}$ and $\beta$-SiC(15R). Flexural strength showed the highest of 301.33MPa for composites added with 8wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed the highest of $3.6979MPa{\cdot}m^{1/2}$ for composites added with 8wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature. The electrical resistivity was measured by the Pauw method from $25^{\circ}C$ to $700^{\circ}C$. The electrical resistivity of the composites showed the PTCR(Positive Temperature Coefficient Resistivity).

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 1999.05a
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• pp.159-164
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• 1999

PTC (Positive Temperature Coefficient of Resistivity) 소자는 티탄산 바륨 (barium titanate) 계열의 페로브스카이트 (perovskite) 구조를 가지는 물질을 반도체화시켰을 때 큐리온도 부근에서 저항이 1,000배 이상 증가하는 물질을 가리킨다. 처음에는 BaTiO$_3$를 대상으로 12$0^{\circ}C$ 부근에서 발생하는 PTC 현상을 연구하였으나, BaTiO$_3$에 SrTiO$_3$, PbTiO$_3$를 첨가하면, 큐리온도를 낮출 수도 있고, 높일 수도 있어서 PTC 소자의 사용 영역이 넓어졌다. PTC 소자의 응용분야는 1) 천연색 텔레비젼 수상기와 모니터에 사용하는 degausser와 같은 스위칭 소자, 2) 냉장고용 컴프레서등에 사용되는 모터 기동용 소자, 3) 자동차 연료조기증발용 히타와 같은 세라믹 히타 소자로 크게 구분된다.(중략)

• Korean Journal of Materials Research
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• v.26 no.6
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• pp.293-297
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• 2016

Ni-C composite films were prepared by co-deposition using a combined technique of plasma CVD and ion beam sputtering deposition. Depending on the deposition conditions, Ni-C thin films manifested three kinds of microstructure: (1) nanocrystallites of non-equilibrium carbide of nickel, (2) amorphous Ni-C film, and (3) granular Ni-C film. The electrical resistivity was also found to vary from about $10^2{\mu}{\Omega}cm$ for the carbide films to about $10^4{\mu}{\Omega}cm$ for the amorphous Ni-C films. The Ni-C films deposited at ambient temperatures showed very low TCR values compared with that of metallic nickel film, and all the films showed ohmic characterization, even those in the amorphous state with very high resistivity. The TCR value decreased slightly with increasing of the flow rate of $CH_4$. For the films deposited at $200^{\circ}C$, TCR decreased with increasing $CH_4$ flow rate; especially, it changed sign from positive to negative at a $CH_4$ flow rate of 0.35 sccm. By increasing the $CH_4$ flow rate, the amorphous component in the film increased; thus, the portion of $Ni_3C$ grains separated from each other became larger, and the contribution to electrical conductivity due to thermally activated tunneling became dominant. This also accounts for the sign change of TCR when the filme was deposited at higher flow rate of $CH_4$. The microstructures of the Ni-C films deposited in these ways range from amorphous Ni-C alloy to granular structures with $Ni_3C$ nanocrystallites. These films are characterized by high resistivity and low TCR values; the electrical properties can be adjusted over a wide range by controlling the microstructures and compositions of the films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.126-127
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• 2007

Sn-filled and Fe-doped $CoSb_3$ skutterudites were synthesized by encapsulated induction melting. Single ${\delta}$-phase was successfully obtained by subsequent annealing and confirmed by X-ray diffraction analysis. Temperature dependences of Seebeck coefficient, electrical resistivity and thermal conductivity were examined from 300 K to 700 K. The positive Seebeck coefficient confirmed the p-type conduction. Electrical resistivity increased with increasing temperature, which shows that the $Sn_zCo_3FeSb_{12}$ skutterudite is highly degenerate. Thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. Thermoelectric figure of merit was enhanced by Sn filling and its optimum filling content was considered to be z=0.3 in the $Sn_zCo_3FeSb_{12}$ system.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.92-97
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta$-SiC+39vol. %ZrB2 electroconductive ceramic composites were investigated by adding 1, 2, 3wt% Al2O3+Y2O3(6:4wt%) of the liquid forming additives. In this microstructures, no reactions were observed between $\beta-SiC$ and ZrB2. The relative density is over 90.8% of the theoretical density and the porosity decreased with increasing Al2O3+Y2O3 contents. Phase analysis of the composites by XRD revealed $\alpha-SiC(6H, 4H)$, ZrB2 and $\beta-SiC$(15R). Flexural srength showed the highest of 315.5MPa for composites added with 3wt% Al2O3+Y2O3 additives as room temperature. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed 5.5MPa.m1/2 and 5.3MPa.m1/2 for composites added with 2wt% and 3wt% Al2O3+Y2O3 additives respectively at room temperature. The area fraction of the elongated SiC grain in the etched surface of sample showed 65% and 65.1% for composite added with 2wt% and 3wt% Al2O3+Y2O3 additives respectively. The electrical resistivity at room temperature. The electrical resistivity of the composites wall all positive temperature coefficient(PTCR) against temperature up to $700^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.336-336
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• 2008

A positive temperature coefficient of electrical resistivity (PTCR) was investigated in a ferroelectric lead-free perovskite-type compound $(Bi_{0.5}K_{0.5})TiO_3$ within $BaTiO_3$-based solid solution ceramics. The electrical properties and the microstructure of (1-x) $BaTiO_3$ - x $(Bi_{0.5}K_{0.5})TiO_3$ (BBKT) ceramics made using a conventional mixed and have been synthesized by an ordinary sintering technique. The Curie temperature was obviously increased with increasing of $(Bi_{0.5}K_{0.5})TiO_3$ content. The BKT ceramics (x=0.05) sintered at $1400^{\circ}C$ for 4h display low resistivity values of $10^1-10^2$ ohm cm at room temperature, PTCR effect(jump) of 1.05*$10^3$, and the Curie temperature of $T_c=141^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.251-251
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• 2007

A new type of a lead-free positive temperature coefficient of resistivity(PTCR) material. based on $(Bi_{1/2}Na_{1/2})TiO_3\;-\;BaTiO_3$ solid solution ceramics has been developed. The effect of $Nb_O_5$ and $Y_2O_3$ content on the electrical properties and the microstructure of (1-x) $(Bi_{1/2}Na_{1/2})TiO_3\;-\;x\;BaTiO_3$ (BNBT) ceramics made using a conventional mixed oxide process has been studied. The Curie Temperature was obviously increased with the increasing of $(B_{0.5}Na_{0.5})TiO_3$ content. The Y-doped BNBT ceramics(x=0.02) display low resistivity values of $10^2-10^3$ ohm*cm at room temperature and the Curie Temperature of $Tc=155^{\circ}C$.

• Carbon letters
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• v.7 no.2
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• pp.87-96
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• 2006

This paper describes the physical properties of filled Nylon6 composites resin with nano-sized carbon black particle and graphite nanofibers prepared by melt extrusion method. In improving adhesions between resin and fillers, the surface of the carbon filler materials were chemically modified by thermo-oxidative treatments and followed by treatments of silane coupling agent. Crystallization temperature and rate of crystallization increased with increases in filler concentration which would act as nuclei for crystallization. The silane treatments on the filler materials showed effect of reduction in crystallization temperature, possibly from enhancement in wetting property of the surface of the filler materials. Percolation transition phenomenon at which the volume resistivity was sharply decreased was observed above 9 wt% of carbon black and above 6 wt% of graphite nanofiber. The graphite nanofibers contributed to more effectively in an increase in electrical conductivity than carbon black did, on the other hand, the silane coupling agent negatively affected to the electrical conductivity due to the insulating property of the silane. Positive temperature coefficient (PTC) phenomenon, was observed as usual in other composites, that is, temperature increase results conductivity increase. The dispersity of the fillers were excellently approached by melt extrusion of co-rotational twin screw type and it could be illustrated by X-ray diffraction and SEM.

• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.76-82
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• 2000

PTC thermistors with multilayer structure were fabricated by internal electrode bonding technique in order to realize low resistance. MLPTC (Multilayer Positive Temperature Coefficient) possess various features, such as small size, low resistivity and large current. We describe the effect of additives on the PTC characteristics, voltage - current characteristics, temperature dependence of resistance and complex impedance spectra as a function of frequency range 100 Hz to 13MHz to determine grain boundary resistance. It was found that MLPTC thermistor has both highly nonlinear effects of temperature dependent resistance and voltage dependent current behaviors, which act as passive element with self-repair mechanisms. Decrease of room temperature resistance with increasing the number of layers was demonstrated to be a grain boundary effect. Switching characteristics of current were caused by heat capacity of PTC thermistor with multilayer structure. Switching times are lengthened by increasing the number of layers.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.11
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• pp.505-513
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• 2006

The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites. Phase analysis of composites by XRD revealed mostly of ${\alpha}-SiC(4H),\;ZrB_2,\;{\beta}-SiC(15R)$ and In Situ $YAG(Al_5Y_3O_{12})$. The relative density and the flexural strength showed the highest value of 86.8[%] and 203[Mpa] for $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed 3.7 and $3.6[MPa{\cdot}m^{1/2}]\;for\;SiC-ZrB_2$ composites with an addition of 8 and 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}-SiC\;into\;{\alpha}-SiC$ was correlated with In Situ YAG phase by reaction between $Al_2O_3\;and\;Y_2O_3$ additives during sintering. The electrical resistivity showed the lowest value of $6.5{\times}10^{-3}[({\Omega}{\cdot}cm]$ for the $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature. The electrical resistivity of the $SiC-ZrB_2$ composites was all positive temperature coefficient(PTCR) in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The resistance temperature coefficient showed the highest value of $3.53{\times}10^{-3}/[^{\circ}C]\;for\;SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. In this paper, it is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.