• Macromolecular Research
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• 제10권2호
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• pp.67-74
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• 2002

New immunoprotecting membranes were prepared by spin coating the amphiphilic random multiblock copolymers of poly(ethylene glycol) (PEG) and poly(tetramethylene ether glycol) (PTMEG) or poly(dimethyl siloxane) (PDMS) on porous Durapore(R) membrane. The copolymer coating was intended to make a biocompatible, immunoprotecting diffusional barrier and the supporting porous substrate was for mechanical stability and processability. By filling Durapore(R) membrane pores with water, the penetration of coating solution into the pores was minimized during the spin coating process. A single coating process produced a completely covered thin surface layer (~1 ${\mu}{\textrm}{m}$ in thickness) on the porous substrate membrane. The permselectivity of the coated layer was influenced by PEG block length, polymer composition, and thickness of the coating layer. A composite membrane with the coating layer prepared with PEG 2 K/PTMEG 2 K block copolymer showed that its molecular weight cut-of fat any 40 based on dextran was close to the molecular size of IgG (Mw = 150 kDa). However, IgG permeation was detected from protein permeation test, while glucose oxidase (Mw = 186 kDa) was not permeable through the coated membrane.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.69-72
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• 2002

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^{2}$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.310-310
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• 2012

ZnO thin films were grown on porous silicon (PS) by plasma-assisted molecular beam epitaxy (PA-MBE). The optical properties of the ZnO thin films grown on PS were studied using room-temperature, low-temperature, and temperature-dependent photoluminescence (PL). The full width at half maximum (FWHM) of the near-band-edge emission (NBE) from the ZnO thin films was 98 meV, which was much smaller than that of ZnO thin films grown on a Si substrate. This value was even smaller than that of ZnO thin films grown on a sapphire substrate. The Huang-Rhys factor S associated with the free exciton (FX) emission from the ZnO thin films was found to be 0.124. The Eg(0) value obtained from the fitting was 3.37 eV, with ${\alpha}=3.3{\times}10^{-2}eV/K$ and ${\beta}=8.6{\times}10^3K$. The low- and high-temperature activation energies were 9 and 28 meV, respectively. The exciton radiative lifetime of the ZnO thin films showed a non-linear behavior, which was established using a quadratic equation.

• 한국세라믹학회지
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• 제35권5호
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• pp.486-492
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• 1998

Silicon carbide (SiC) thin films were deposited on the porous silicon substrates by chemical vapour de-position(CVD) using MTS as a source material. The deposited films were ${\beta}$-SiC with poor crystallity con-firmed by XRD measurement. It was considered that the films showed the mixed characteistics of cry-stalline and amorphous SiC where amorphous SiC where amorphous SiC played a role of buffer layer in interface between as-dep films and Si substrate. The buffer layer reduced lattice mismatch to some extent the generally occurs when SiC films are deposited on Si. The low temperature (10K) PL (phtoluminescence) studies showed two broad bands with peaks at 600 and 720 for the films deposited at 1100$^{\circ}C$ The maximum PL peak of the crystalline SiC was observed at 600 nm and the amrophous SiC of 720 nm was also confirmed. PL peak due the amorphous SiC was smaller than that of the crystalline SiC, PL of porous Si might be disapperared due to densification during heat treatment.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 E
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• pp.2453-2455
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• 1999

We propose that we use a porous-Si for a new spatial walk-off polarizing material with a large split angle. The beam-split an91e f is determined by the filling factor g(or porosity p) of the columnar dielectric substance and the slant angle $\theta$. Theoretically, by the assuming that $n_2$=3.5, and $n_1$=1 one can predict that a large split angle, up to $27^{\circ}$, is possible if one can construct such films with $Si.^{[3]}$ To accomplish this, we use porous-Si. As a result of theoretical simulation, the best structural parameters for attaining the maximum split angle $\phi$=$27.5^{\circ}$ are $\theta$=$58.7^{\circ}$ and p=57.6%.

• 통합자연과학논문집
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• 제2권2호
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• pp.82-85
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• 2009

Distributed Bragg reflector (DBR) porous silicon (PSi) was generated by an electrochemical etching a bragg structure into a silicon wafer through electrode current in aqueous ethanolic HF solution. DBR PSi exhibiting unique reflectivity was successfully obtained by an electrochemical etching of silicon wafer using square current waveform. The multilayered photonic crystals of DBR PSi exhibited the reflection of a specific wavelength with high reflectivity in the optical reflectivity spectrum. In this work, we have developed a method to create refractive index in Si substrate through intensity of an electric current. The electrochemical process allows for precise control of the structural properties of DBR PSi such as thickness of the porous layer, porosity, and average pore diameter. The number of reflection peak of DBR PSi and its pore size increased as the intensity of electric current increased. This might be a demonstration for the fabrication of specific reflectors or filters.

• 한국전기전자재료학회논문지
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• 제11권8호
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• pp.620-627
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• 1998

For chemical microsensors such as humidity and gas sensors, it is essential to obtain a single pore with a large inner surface and straight structure. In this paper, cylindrical macroporous silicon layers have been formed of p-silicon substrate by anodization in HF-ethanol-water solution with an applied current. The pores grew normal to the (100) surface and were uniformly distributed. The pore diameter was approximately $1.5~2{\mu}m$ with a depth of $20~30{\mu}m$ and the pores were not interconnected, which are in sharp contrast to the porous silicon reported previouly for similarly doped p-Si. Porous silicon diaphragms 18 to $200{\mu}m$ thick were formed by anistropic etching in TMAH solution and then anodization. The fabrication of macroporous silicon and free-standing diaphragms is expected to offer applications for microsensors, micromachining, and separators.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.475-476
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• 2006

Using microwave synthesized HAp nano powder and polymethyl methacrylate (PMMA) as a pore-forming agent, the porous biphasic calcium phosphate (BCP) ceramics were fabricated depending on the sintering temperature. The synthesized HAp powders was about 70-90 nm in diameter. In the porous sintered bodies, the pores having $150-180\;{\mu}m$ were homogeneously dispersed in the BCP matrix. Some amounts of pores interconnected due the necking of PMMA powders which will increase the osteoconductivity and ingrowth of bone-tissues while using as a bone substrate. As the sintering temperature increased, the relative density increased and showed the maximum value of 79.6%. From the SBF experiment, the maximum resorption of $Ca^{2+}$ ion was observed in the sample sintered at $1000^{\circ}C$.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.92-97
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• 2002

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900 ^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^2$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

• 한국재료학회지
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• 제16권11호
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• pp.715-718
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• 2006

Porous hydroxyapatite (HAp) scaffolds have been prepared by using the slurry including HAp and magnesia based on the replication of polymer sponge substrate. The influence of MgO content in slurry on the pore morphology and size, density, porosity, and mechanical strength of porous HAp scaffolds was investigated. The obtained scaffolds with average pore sizes ranging 150 to 300 mm had open, relatively uniform, and interconnected porous structure regardless of MgO content. As the MgO content increased, the pore network frame of scaffolds became to be relatively stronger, even though the pore size was not much changed. The compressive strength of the scaffolds increased rapidly with the increase of MgO content because of increasing the pore wall thickness and density of the scaffolds. As a result, the porosity, density, and compressive strength of the porous HAp scaffolds prepared by the sponge method were significantly affected by the addition of MgO.