• 제목/요약/키워드: Polymer microstructures

검색결과 78건 처리시간 0.027초

폴리머 적층 시스템을 이용한 다양한 3 차원 미세 구조물 제작에 관한 연구 (A Study on the Fabrication of Various 3D Microstructures using Polymer Deposition System)

  • 김종영
    • 한국정밀공학회지
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    • 제29권6호
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    • pp.686-692
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    • 2012
  • Solid free-form fabrication (SFF) technology was developed to fabricate three-dimensional (3D) scaffolds for tissue engineering (TE) applications. In this study, we developed a polymer deposition system (PDS) and created 3D microstructures using a bioresorbable polycaprolactone (PCL) polymer. Fabrication of 3D scaffolds by PDS requires a combination of several devices, including a heating system, dispenser, and motion controller. The system can process a polymer with extremely high precision by using a 200 ${\mu}m$ nozzle. Based on scanning electron microscope (SEM) images, both the line width and the piled line height were fine and uniform. Several 3D micro-structures, including the ANU pattern (a pattern named after Andong National University), $45^{\circ}$ pattern square, frame, cylindrical, triangular, cross-shaped, and hexagon, have been fabricated using the polymer deposition system.

초음파진동에너지를 이용한 고분자 마이크로구조물의 성형 (Polymer Replication Using Ultrasonic Vibration)

  • 유현우;이치훈;고종수;신보성;노치현
    • 대한기계학회논문집A
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    • 제32권5호
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    • pp.419-423
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    • 2008
  • A new polymer replication technology using ultrasonic vibration is proposed and demonstrated. A commercial ultrasonic welder has been used in this experiment. Two different types of nickel molds have been fabricated: pillar type and pore type microstructures. Polymethyl methacrlylate (PMMA) has been used as the replication material and the optimal molding time was 2 sec and 2.5 sec for pillar-type and pore-type micromolds, respectively. Compared with the conventional polymer micromolding techniques, the proposed ultrasonic micromolding technique has the shortest processing time. In addition, only contact area between micromold and polymer substrate is melted so that the thermal shrinkage can be minimized. The fabricated PMMA microstructures have been very accurately replicated without vacuum. The proposed ultrasonic molding technique is a good alternative for high volume production.

광중합에 의한 초고온 MEMS용 SiCN 미세구조물 제작과 그 특성 (Fabrication of SiCN microstructures for super-high temperature MEMS using photopolymerization and its characteristics)

  • 정귀상
    • 센서학회지
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    • 제15권2호
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    • pp.148-152
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    • 2006
  • This paper describes the fabrication of SiCN microstructures for super-high temperature MEMS using photopolymerization of pre-ceramic polymer. In this work, polysilazane liquide as a precursor was deposited on Si wafers by spin coating, microstructured and solidificated by UV lithography, and removed from the substrate. The resulting solid polymer microstructures were cross-linked under HIP process and pyrolyzed to form a ceramic of withstanding over $1400^{\circ}C$. Finally, the fabricated SiCN microstructures were annealed at $1400^{\circ}C$ in a nitrogen atmosphere. Mechanical characteristics of the SiCN microstructure with different fabrication process conditions were evaluated. The elastic modules, hardness and tensile strength of the SiC microstructure implemented under optimum process condtions are 94.5 GPa, 10.5 GPa and 11.7 N/min, respectively. Consequently, the SiCN microstructure proposed in this work is very suitable for super-high temperature MEMS application due to very simple fabrication process and the potential possiblity of sophisticated mulitlayer or 3D microstructures as well as its good mechanical properties.

초고온 MEMS용 SiCN 미세구조물 제작과 그 특성 (Fabrication of SiCN Microstructures for Super-High Temperature MEMS and Its Characteristics)

  • 이규철;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.392-393
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    • 2006
  • This paper describes the fabrication of SiCN microstructures for super-high temperature MEMS using photopolymerization of pre-ceramic polymer. In this work. polysilazane liquide as a precursor was deposited on Si wafers by spin coating. microstructured and solidificated by UV lithography. and removed from the substrate. The resulting solid polymer microstructures were cross-linked under HIP process and pyrolyzed to form a ceramic of withstanding over $1400^{\circ}C$. Finally, the fabricated SiCN microstructures were annealed at $1400^{\circ}C$ in a nitrogen atmosphere. Mechanical characteristics of the SiCN microstructure with different fabrication process conditions were evaluated. The elastic modules. hardness and tensile strength of the SiC microstructure implemented under optimum process conditions are 94.5 GPa, 10.5 GPa and 11.7 N/min, respectively. Consequently, the SiCN microstructure proposed in this work is very suitable for super-high temperature MEMS application due to very simple fabrication process and the potential possiblity of sophisticated multlayer or 3D microstructures as well as its good mechanical properties.

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Single cell gap polymer-stabilized blue-phase transflective LCDs using internal nanowire grid polarizer

  • Cui, Hong-Qing;Ye, Zhi-Cheng;Hu, Wei;Lin, Xiao Wen;Chung, T.C.;Jen, Tean-Sen;Lu, Yan-Qing
    • Journal of Information Display
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    • 제12권3호
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    • pp.115-119
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    • 2011
  • Optically isotropic liquid crystal (LC) mixture such as blue-phase LC and nanostructured LC composites exhibit the advantages of fast response time, high contrast ratio and wide-viewing angle due to the induced birefringence along the horizontal electric field. Utilizing this mixture, a novel single cell gap in-plane switching-type polymer-stabilized blue-phase transflective liquid crystal display by embedding the nanowire grid polarizer as a polarization-dependent reflective polarizer in the R region is proposed. This device can be used as a normal black mode without any quarter-wave plate or patterned in-cell phase retarder. Moreover, the transmittance is identical to the reflectance so that it will be suitable for single gamma driving. Detailed electro-optic performances, such as voltage-dependent light efficiency and viewing angle of the proposed device configuration, are investigated.

Gel-Casting으로 제조한 알루미나 성형체의 건조와 미세구조 (Microstructures and Drying of the Alumina Green Body by the Gel-Casting Method)

  • 오창준;이홍림
    • 한국세라믹학회지
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    • 제31권12호
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    • pp.1467-1474
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    • 1994
  • The effects of the dispersion, drying, and binder burning-out on the green-microstructures of gelcasted alumina were studied. The slip consisting of 55 vol% alumina powder and 5 wt% organic materials was well-dispersed by adding 0.28 wt% polyelectrolyte polymer. Green bodies were dried at >85% relative humidity at room temperature. Green-microstructures were observed to be depended on the heating rate during binder burnout. Constant drying rate was not observed in drying process of gelcasted alumina. Sintered body showed its relative density higher than 99% when it was sintered at 1$600^{\circ}C$ for 2 hours.

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PDMS 몰드를 이용한 초고온 MEMS용 SiCN 미세구조물 제작과 그 특성 (Fabrication of SiCN microstructures for super-high temperature MEMS using PDMS mold and its characteristics)

  • 정귀상;우형순
    • 센서학회지
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    • 제15권1호
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    • pp.53-57
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    • 2006
  • This paper describes a novel processing technique for fabrication of polymer-derived SiCN (silicone carbonitride) microstructures for super-temperature MEMS applications. PDMS (polydimethylsiloxane) mold is fabricated on SU-8 photoresist using standard UV photolithographic process. Liquid precursor is injected into the PDMS mold. Finally, solid polymer structure is cross-linked using HIP (hot isostatic pressure) at $400^{\circ}C$, 205 bar. Optimum pyrolysis and annealing conditions are determined to form a ceramic microstructure capable of withstanding over $1400^{\circ}C$. The fabricated SiCN ceramic microstructure has excellent characteristics, such as shear strength (15.2 N), insulation resistance ($2.163{\times}10^{14}{\Omega}$) and BDV (min. 1.2 kV) under optimum process condition. These fabricated SiCN ceramic microstructures have greater electric and physical characteristics than bulk Si wafer. The fabricated SiCN microstructures would be applied for supertemperature MEMS applications such as heat exchanger and combustion chamber.

초고온 MEMS용 SiCN 미세구조물 제조 (Fabrication of SiCN Microstructures for Super-Temperature MEMS applications)

  • 우형순;김규현;노상수;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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    • pp.125-128
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    • 2004
  • In this paper, a novel processing technique for fabrication of high-temperature MEMS based on polymer-derived SiCN microstructures is described. PDMS molds are fabricated on SU-8 photoresist using standard UV-photolithographic processes. Liquid precursors are injected into the PDMS mold. And then, the resulting solid polymer structures are crosslinked under isostatic pressure, and pyrolyzed to form a ceramic capable of withstanding over $1500^{\circ}C$. These fabricated SiCN structures would be applied for high-temperature applications, such as heat exchanger and combustion chamber.

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템플레이트의 국소 위치에 형성된 전도성 고분자 미세구조물의 전기화학 합성 (Electrochemical Template Synthesis of Conducting Polymer Microstructures at Addressed Positions)

  • 이승현;서수정;윤금희;손용근
    • 전기화학회지
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    • 제7권2호
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    • pp.100-107
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    • 2004
  • 다공성 멤브레인 필터를 템플레이트로 이용하여 전도성 고분자를 중합하면 템플레이트의 형태대로 나노 또는 마이크로 사이즈의 전도성 고분자 구조물을 얻을 수 있다. 본 연구에서는 전기화학 중합법을 템플레이트 합성 과정에 이용하여 전극에 고착된 전도성 고분자 미세 구조물을 얻었다. 이 전기화학 템플레이트 합성 방법에서의 관건은 플라스틱 템플레이트를 ITO 또는 금속 전극위에 부착시키는 일이다, 이 때 전극은 전기화학 특성을 보지하여야 한다 이를 위하여 PEDiTT(poly-3,4-ethylenedithiathiophene) 용액과 PVA (polyvinyl alcohol) 용액을 블랜딩히여 얻은 복합체(composite)를 접착제로 이용하여 다공성 멤브레인 필터를 전극에 부착시켜 템플레이트 전극을 제작하였다. 이 전극을 피롤농도가 0.5M인 중합용액에 넣은 후 전해반응으로 템플레이트의 기공 안으로 폴리피롤이 합성되도록 하였다. 폴리피를 형성여부를 확인하기 위하여 템플레이트의 제거 전과 후의 전극 모습을 SEM이미지로 얻어서 확인하였다 또한 순환전압전류댑으로 전류 곡선을 얻어 확인하였다. 비교적 면적이 큰 작업 전극과 매우 작은 미소전극을 상대전극으로 구성한 전해 중합계를 이용하여 큰 작업 전극의 국소 부분에만 전도성 고분자의 전해중합을 시도하였다. 이를 위하여 마이크로 크기의 전극을 상대전극(Counter Electrode)으로, 그리고 템플레이트가 부착된 전극을 작업 전극(Working Electrode)으로 하는 2전극계를 구성하여 이용하였다. 이 전해계를 이용하여 얻은 미세구조물은 템플레이트의 동공 크기와 같은 크기로 성장하였고 형태는 튜브나 막대기 형태를 보였다. 특히 상대전극의 위치를 조정하여 원하는 위치에 튜브형태의 미세구조물을 합성하였다. 최종 합성조건으로는 $250{\mu}m$ 전극은 인가전위 4V로 100초간 중합시간, 그리고 $10{\mu}m$전극의 경우는 인가 전위 6V에 시간은 30초 동안 중합할 때 고분자가 멤브레인 동공 밖으로 넘쳐나지 않는 만큼 성장함을 알았다.