• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.509-512
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• 1999

The main problem in porcelain as a high voltage insulator is that the water film is felled on the insulator surface due to rain, flog, and dew. In the presence of contamination. leakage current increases which may lead to flashover that could be followed by an outage of the power system. These days, high voltage polymer outdoer insulators have been studied and widely used, because they have excellent electrical and mechanical properties, superior performance of flashover for contamination. light weight, easy installation or handling. no maintenance during service, competitive price, and so on. First of a1l the excellent performance of the silicone rubber in polluted and wet conditions is attributed to the ability of the material to maintain the hydrophobicity of the surface in the presence of severe contaminants and wet conditions. This is due to a low surface energy of the silicone rubber. But the leakage current and some surface discharge occurs on the surface of insulator when the insulator is used for a long time. So the leakage current and the surface discharge current are important lo estimate the condition of the silicone rubber surface. In this paper, the average leakage current the surface discharge current the surface rubber surface with the salt fog condition for the first stage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.227-230
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• 2003

Silicone rubber has very excellent chemical stability and hydrophobicity. A hydrophobic surface can prevent the formation of continuous water films on the surface in wet and heavily contaminated conditions. This phenomenon contributes to the suppression of leakage current and partial discharges on insulator surfaces. Silicone rubber has been used much for housing materials of polymer insulators. ATH is added to the silicone rubber for improvement of its resistance against surface discharge. In this paper, ATH with different particle size and content was added to the silicone rubber during compounding. Silicone rubber was deteriorated by a corona treatment. Hydrophobicity recovery rate after corona treatment and arc resistance of silicone rubber were investigated. Hydrophobicity recovery rate of silicone rubber was evaluated by the measurement of contact angle. Arc resistance was evaluated by measuring weight loss of silicone rubber after arc resistance test. It was observed that the hydrophobicity recovery rate and arc resistance of silicone rubber were different when different particle size and content of ATH were added.

• Elastomers and Composites
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• v.34 no.3
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• pp.199-211
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• 1999

In this work, the effects of the addition of epoxy on the properties of PVC-sol sealants were investigated. PVC-sol was plasticized with dioctyl phthalates(DOP). Two kinds of epoxy resins having different epoxy equivalent weight (E.E.W.) were used. It was found that the properties of the PVC-sol sealants were significantly affected by the contents and types of the added epoxy resins. The viscosity behaviors of the epoxy-modified sealants, in the case of epoxy A addition, the viscosity was decreased with increasing the epoxy contents, but In the case of $CaCO_3$ addition, the viscosity was increased with increasing the $CaCO_3$ contents. The viscosity of epoxy modified sealants aged at $45^{\circ}C$ waterbath was decreased with increasing epoxy contents, since the epoxy acted on the sealants as a stabilizer. The thermal stability of the PVC-sol sealants was slightly improved by adding epoxy. The tensile strength and elongation of sealants modified with epoxy A(two functionalities of epoxy) were increased with increasing the epoxy contents up to a certain epoxy contents but was decreased with further increasing the epoxy contents. In the case of $CaCO_3$ addition, the tensile strength of sealants were decreased with increasing the $CaCO_3$ contents. In view of the electrical properties, such as tan ${\delta}$($0.1{\pm}0.04$) and ${\epsilon}_r$($0.5{\pm}0.04$), it was found that the epoxy modified sealants were as good as insulators.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.135-140
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• 2020

An experimental study was conducted using the tracking wheel test (IEC 62217) method for evaluating the performance of insulator materials, in particular ethylene propylene diene monomer (EPDM) and silicone rubber. In addition, we studied the tracking characteristics resulting from applying the same method for the shape of the insulator housing, that is, the performance of regular and alternating sheds. The evaluation parameters were leakage current, surface characteristics, SEM, EDX, hydrophobicity, and temperature distribution; likewise, we applied the commercial frequency dry (and wet) flashover voltage test. We found that the regular shed had a greater leakage current than the alternating shed and that the recovery of the hydrophobicity in terms of rest time was greater than that of the EPDM in terms of leakage current. All of the regular-shed insulators of silicone rubber had tracking traces and choking on the sheath parting line, while the alternating shed showed only choking at the interface but no tracking traces. Therefore, it can be concluded that the commercial frequency wet flashover voltage of the silicone rubber with regular shed before and after the tracking wheel test is higher than that of the alternating shed.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1345-1346
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• 2007

다양한 게이트 절연막의 펜타신 박막 트랜지스터의 전기적 특성을 atomic force microscope (AFM), X-선 회절을 사용하여 분석하였다. 펜타신 박막 트랜지스터는 thermal evaporator 방법을 사용하여 여러 폴리며 기판위에 제작하였다. Hexamethylsilasane (HMDS), polyvinyl acetate (PVA), polymethyl methacrylate (PMMA)등의 폴리머 기판을 사용하여 다양한 온도에서 증착시켰다. 이 때 PMMA위에 증착시킨 펜타신의 경우가 가장 큰 그레인 크기를 보였고, 가장 적은 트랩 농도를 보였다. 그리고 상부 전극 구조를 가진 박막 트랜지스터를 HMDS 처리를 한 $SiO_2$와 PMMA 절연막을 사용하여 제작하고 비교하였다. 이때 PMMA기판 위에 제작한 트랜지스터는 전계효과 이동도가 ${\mu}_{FET}=0.03cm^{2}/Vs$ 이고, 문턱이전 기울기 0.55V/dec, 문턱전압 $V_{th}=-6V$, on/off 전류비 $>10^5$의 전기적 특성을 보였고, $SiO_2$ 기판위에 제작한 트랜지스터는 전계효과 이동도 ${\mu}_{FET}=0.004cm^{2}/Vs$, 문턱이전 기울기 0.518 V/dec, 문턱전압 $V_{th}=5V$, on/off 전류비 $>10^4$의 전기적 특성을 보였다.