• 한국광학회지
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• 제18권2호
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• pp.149-154
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• 2007

저가의 소자 개발이 가능한 나노임프린팅 공정을 도입하여 510 nm 주기의 브래그 격자 구조를 가지는 폴리머 광도파로 소자를 제작하였다. 폴리머 격자 광소자의 온도 의존성을 감소시키기 위한 방법으로 플라스틱 박막으로 이루어진 유연성 기판상에 브래그 격자를 제작하는 것이 필요하다. 임프린팅 공정을 손쉽게 수행하기 위한 광도파로 구조를 채택하였으며, 코아와 클래딩의 굴절률이 각각 1.540, 1.430인 폴리머를 이용하여 코아 두께가 $3{\mu}m$인 단일모드 광도파로 구조를 얻을 수 있었다. 유연성 기판 브래그 격자 광도파로 소자의 특성을 Si기판 브래그 격자 광도파로 소자와 비교하여 관측한 결과, 유연성 기판 도입에 따른 브래그 반사 소자의 성능 저하는 나타나지 않았다.

• 폴리머
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• 제36권4호
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• pp.461-469
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• 2012

아르곤(Ar) 플라즈마 처리된 폴리프로필렌 복합소재의 표면 개질 및 특성 변화를 X-선 광전자 분광 분석(XPS), 적외선 분광 분석(FTIR), 주사 전자 현미경 분석(SEM) 및 접촉각 측정 등을 이용하여 조사하였다. Ar 플라즈마 처리 시간의 증가는 폴리프로필렌 복합소재 표면의 젖음성, 극성 관능기를 갖는 산소 성분, 탈크 함량 및 표면조도의 증가를 초래하였다. 주사 전자 현미경 분석을 통한 자세한 관찰은 폴리프로필렌 성분으로 구성된 표면층(skin layer)이 존재함을 확인하였다. 폴리프로필렌과 고무 입자간의 점도차는 표면층의 생성을 촉진시켰다. 하지만 Ar 플라즈마 처리시간의 증가는 표면층의 두께를 감소시키는 것을 확인하였다. 사출성형 공정 동안, 표면층을 제거할 수 있는 추가적인 방법론에 대해서도 토의하였다. Ar 플라즈마 처리에 의한 표면 개질 및 모폴로지의 변화는 폴리프로필렌 복합소재 표면 상에 친수화 상태를 부여하고, 이에 따라 젖음성 향상을 유도하였다.

• 한국의류학회지
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• 제29권3_4호
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• pp.561-568
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• 2005

The irradiation of Ultra-Violet (UV) is an efficient treatment for polymer to improve hydrophilic properties. 4-Channel PET knit fabrics were treated with UVA and UVC to develop functional and environment-friendly fabric. The fabric was treated with various treatment times and distances from UV lamps having different wavelength. FT-IR and XPS investigated the chemical changes. To confirm the change of surface properties, contact angle, surface energy and SEM were examined. The study of UV as a treatment for PET knit fabric shows significant changes in chemical and surface properties, which is proved by analyses. FT-IR and XPS analyses prove the augmentation of carboxylic, Hydrophilic groups on the surfaces treated by UV. The increase of water contact angle and surface energy means more water wettable and surface energy of PET film was substantially increased by UV irradiation time. The ageing after surface treatment had little influence on the surface energy of the irradiated PET film. SEM proves the surface modification of PET such as etching, bubble and crack. The negative effects are increased in accordance with increasing treatment time.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.163.2-163.2
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• 2010

We developed a simple method to synthesis a nitrogen doped graphene, nitrogen plasma treated graphene (NPG) sheets thought nitrogen plasma etching of graphene oxide (GO). X-ray photo electron spectroscopy (XPS) study of NPG sheets treated at various plasma conditions reveal that N-doping is classified to 3 kinds of binding configurations. The nitrogen doping concentration is at least 1.5 at % and up to 3 at% with changing of ratio of nitrogen configuration in NPG. Our group demonstrate ultracapacitor with high capacity and extremely durable using a NPG sheets that are comparable to pristine graphene supercapacitor, and pseudocapacitor using polymer and metal oxide with redox reaction, capacitance that are three-times higher, and a cycle life that are extremely stable. We also realized flexible capacitor by using the paper electrode that are coated by NPG sheets. NPG paper capacitor presented almost same performance compare with NPG on a metal substrate, and durability is much more enhanced than that. To additionally explain that how different kind of atoms in graphene layers can act as the ion absorption sites, we simulated the binding energy between nitrogen in graphene layer and ions in electrolyte. Increasing the energy density and long cycle life of ultracapacitor will enable them to compete with batteries and conventional capacitors in number of applications.

• 대한기계학회논문집A
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• 제28권12호
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• pp.1871-1876
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• 2004

We demonstrate a novel fabrication technology for the microneedle array that can be used in the medical test field, which is transdermal drug delivery and blood analyte sampling. Previous researchers have used silicon-processed micromachining, a reactive ion etching, and molding techniques for the fabrication of microneedle array. However, these fabrication techniques have somewhat limitations apply to the microneedle array fabrication according to its application. Inclined LIGA process is suggested to overcome these problems. This process provides easier, sharper and longer out-of-plane microneedle array structure than conventional silicon-processed fabrication method did. Additionally, because of the advantage of the LIGA process based on mold fabrication for mass production, the polymer, PMMA(PolyMethylMethAcrylate), based microneedle array is useful as the mold base of nickel electroplating process; on the other hand, silicon-processed microneedle array is used in itself. In this research, we fabricate different types of out-of-plane microneedle array, which have different shape of tip, base and hole structure, using the inclined LIGA process. The fabricated microneedles have proper mechanical strength, height and sharpness to puncture human hand epidermis or dermis with less pain and without needle tip break during penetrating the skin.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.69-69
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• 2003

최근 trench capacitor, isolation trench, micro-electromechanical system(MEMS), micro-opto-electromechanical system(MOEMS)등의 다양한 기술에 적용될 고종횡비(HAR) 실리콘 식각기술연구가 진행되어 지고 있다. 이는 기존의 습식식각시 발생하는 결정방향에 따른 식각률의 차이에 관한 문제와 standard reactive ion etching(RIE) 에서의 낮은 종횡비와 식각률에 기인한 문제점들을 개선하기 위해 고밀도 플라즈마를 이용한 건식식각 장비를 사용하여 고종횡비(depth/width), 높은 식각률을 가지는 이방성 트랜치 구조를 얻는 것이다. 초기에는 주로 HBr chemistry를 이용한 연구가 진행되었는데 이는 식각률이 낮고 많은양의 식각부산물이 챔버와 시편에 재증착되는 문제가 발생하였다. 또한 SF6 chemistry의 사용을 통해 식각률의 향상은 가져왔지만 화학적 식각에 기인한 local bowing과 같은 이방성 식각의 문제점들로 인해 최근까지 CHF3, C2F6, C4F8, CF4등의 첨가가스를 이용하여 측벽에 Polymer layer의 식각보호막을 형성시켜 이방성 구조를 얻는 multi_step 공정이 일반화 되었다. 이에 본 연구에서는 SF6 chemistry와 소량의 02/HBr의 첨가가스를 이용한 single_step 공정을 통해 공정의 간소화 및 식각 프로파일을 개선하여 최적의 HAR 실리콘 식각공정 조건을 확보하고자 하였다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.1613-1616
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• 2007

A microgripper using thermal actuator and SU-8 polymer was designed and fabricated to manipulate cells and microparts. A chip size of a microgripper was 3 mm ${\times}$ 5 mm. The thermally actuated microgripper consisted of two couples of hot and cold arm actuators. The high thermal expansion coefficient, 52 $ppm/^{\circ}C$, of SU-8 compared to silicon and metals, allows the actuation of the microgripper. Thickness and width of SU-8 as an end-effector were 26 ${\mu}m$ and 80 ${\mu}m$, respectively. Initial gap between left jaw and right jaw was 120 ${\mu}m$. The ANSYS program as FEM tool was introduced to analyze the thermal distribution and displacement induced by thermal actuators. $XeF_2$ gas was used for isotropic silicon dry etching process to release SU-8 end-effector. Mechanical displacements of the fabricated microgripper were measured by optical microscopy in the range of input voltage from 0 V to 2.5 V. The maximum displacement between two jaws of a microgripper Type OG 1_1 was 22.4 ${\mu}m$ at 2.5 V.

• 전자공학회논문지A
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• 제28A권11호
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• pp.902-909
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• 1991

A reproducible selective dry etch process of GaAs/AlGaAs Heterostructures for High Electron Mobility Transistor(HEMT) Device fabrication is developed. Using RIE mode with $CCl_{2}F_{2}$ as the basic process gas, the observed etch selectivity of GaAs layer with respect to GaAs/$Al_{0.3}Ga_{0.7}$As is about 610:1. Severe polymer deposition problem, parialy generated from the use of $CCl_{2}F_{2}$ gas only, has been significantly reduced by adding a small amount of He gas or by $O_{2}$ plasma ashing after etch process. In order to obtain an optimized etch process for HEMT device fabrication, we com pared the properties of the wet etched Schottky contact with those of the dry etched one, and set dry etch condition to approach the characteristics of Schottky diode on wet etched surface. By applying the optimized etch process, the fabricated HEMT devices have the maximum transconductance $g_{mext}$ of 224 mS/mm, and have relatively uniform distribution across the 2inch wafer in the value of 200$\pm$20mS/mm.

• 전자공학회논문지A
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• 제30A권1호
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• pp.31-43
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• 1993

Thermal behavior and $O_{2}$ plasma effects on residue and penetrated impurities formed by reactive ion etching (RIE) in CHF$_{3}$/C$_{2}$F$_{6}$ have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) techniques. Decomposition of polymer residue film begins between 200-300.deg. C, and above 400.deg. C carbon compound as graphite mainly forms by in-situ resistive heating. It reveals that thermal decomposition of residue can be completed by rapid thermal anneal above 800.deg. C under nitrogen atmosphere and out-diffusion of penetrated impurities is observed. The residue layer has been removed with $O_{2}$ plasma exposure of etched silicon and its chemical bonding states have been changed into F-O, C-O etc.. And $O_{2}$ plasma exposure results in the decrease of penetrated impurities.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1399-1401
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• 2009

In this article, we reported the results of etching polymonochloro-para-xylylene (parylene-C) thin films using inductively coupled plasma and $CF_4/O_2$ gas mixture. The $CF_4$ gas fraction increased up to the approximately 16 %, the polymer etch rate increased in the range of 277 - 373 nm/min. It confirmed that the etch rate of the parylene-C mainly depended on the O radical density in the plasma. Using a contact angle measurement, the contact angle increased with increasing the $CF_4$ fraction. Moreover, the contact angle was highly related a $CF_x$ functional group on parylene films.