• Bulletin of the Korean Chemical Society
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• v.33 no.12
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• pp.3937-3938
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• 2012

• Journal of the Microelectronics and Packaging Society
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• v.25 no.1
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• pp.35-40
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• 2018

Nd:YAG laser was used to carbonize polyimide films to produce carbon films. This is a simple manufacturing process to fabricate low cost sensors. By applying this method, we studied characteristics of flexible and low-cost piezoresistive. Previously, many studies focused on carbonization of polyimide using $CO_2$ laser with wavelength of $10.6{\mu}m$. In this paper, carbonization (carbonization process) was performed on polyimide films using an Nd:YAG laser with a wavelength of $1.064{\mu}m$. In order to increase the resolution, we optimized the laser conditions of the power density ($W/cm^2$) and the beam scan rate. In previous studies using $CO_2$ laser, the minimum line width was $140{\sim}220{\mu}m$ but in this study, carbon line width was reduced to $35{\sim}40{\mu}m$. The initial sheet resistance of the carbon sensor was $100{\sim}300{\Omega}/{\square}$. The resistance decreased by 30% under stretched with a curvature radius of 21 R. The calculated gauge factor was 56.6. This work offers a simple, highly flexible, and low-cost process to fabricate piezoresistive sensors.

• Journal of the Korean institute of surface engineering
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• v.25 no.2
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• pp.90-96
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• 1992

Thed effects of sputter gas pressure and substrate surface micro-roughness on the microstructure and surface topography have been investigated in the Cu thin films sputter deposited onto polyimide substrates. The surface roughness of polyimide was controlled by oxygen rf plasma treatment. In the Cu film deposited at the pressure of 5 mtorr, the surface is smooth and the columnar structure is not visible regardless of polyimide surface more open boundaries. The polyimide surface roughness enhances these effects, These phenomena can be explained in therm of atomic shadowing effect.

• Journal of the Korean institute of surface engineering
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• v.27 no.5
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• pp.261-272
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• 1994

Both Cu-Cr and Cu-Ti alloy films with different composition were prepared by dc magnetron sputtering onto polyimide substrate and their adhesion and microstructure were observed. In addition, the effect of heat treatment at $400^{\circ}C$ for 2 hours on the variation of adhesion properties and on the changess of microstructure were investigated. Cu-Cr alloy films have crystalline structure of either for or bcc phase depending on the composition of the film. However, the Cu-Ti alloy film forms fcc phase at low Ti concentration while it forms an amorphous phase as the Ti concentration in the films is increased to more than 25at.%. TEM analysis reveal that the microstructure of Cu-Cr and Cu-Ti films forms an open structure with vacant spaces. The adhesion between Cu-Cr, Cu-Ti alloy films and polyimide substrate is relatively good before the heat treatment, but is noticeably reduced after the heat treatment. In particular, the adhesion strength is significantly reduced in the Cu-Ti alloy films after the heat treatment. The reduction of adhesion strength after the heat treatment is identified to relate with the formation of oxide phases at the metal/polyimide interface by AES(Auger Electron Spectroscopy).

• Proceedings of the Korean Vacuum Society Conference
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• 1997.07a
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• pp.78-78
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• 1997

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.456-461
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• 2015

In this study, the frequency properties of electrostatic capacity and dielectric loss for the samples with different types of filler has been measured in through the applied frequency range of 7 kHz ~3,000 kHz at temperature of $80^{\circ}C$, $110^{\circ}C$, $140^{\circ}C$, $170^{\circ}C$. The results of this study are as follows. When the sample is degradated at the temperature of $80^{\circ}C$, $110^{\circ}C$, $140^{\circ}C$, $170^{\circ}C$ and the frequency range of 7 kHz ~3,000 kHz is applied, It found that the electrostatic capacity of the sample with Polyimide film is larger than the sample with Grass fiber. It found that the dielectric loss for the sample with Polyimide film is larger than the sample with Grass fiber with increasing frequency and temperature in the $80^{\circ}C$, $110^{\circ}C$, $140^{\circ}C$, $170^{\circ}C$ range. Also, the dielectric loss decreased with increasing frequency. In case of the sample with Polyimide film, It found that the electrostatic capacity decreased with increasing temperature, and the dielectric loss gradually decreased with increasing frequency.

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.11-17
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• 2004

This research has been progressed for adhesive improvement of the Polyimide/Buffer layer/Cu at the COF(Chip On Film) which induced as the alternative plan about high concentration of a circuit or substrates according to demands of miniaturization and high efficiency of various electronic equipment. RF plasma equipment was applied to when plama pretreatment was performed for improvement of adhesive strength of PI and Cr as the buffer layer. Experimental fluents were a species of the buffer layer, depositied time and the ratio of $O_2$/Ar when performed to plasma pretreatment. The results are that Ni was superior to Cr at peel test according to a species of the buffer layer, peel strength and Cu THK were showed proportional relation to deposition structure of the same buffer layer and sample of the Cr depositied time(30 sec) and Cu depositied time(20 min) was showed good adhesion to peel test according to Cr's depositied time and Cu's depositied time. When perform PI's plasma pretreatment peel strength and $O_2$/Ar ratio were showed proportional relation. But $O_2$/Ar(2/5) was best condition since then decreased.

• Journal of the Korean Applied Science and Technology
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• v.19 no.2
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• pp.73-78
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• 2002

The polyimide(PI) Langmuir-Blodgett(LB) ultra thin films were prepared by imidizing the PAAS LB films of PMDA and benzidine system with a thermal treatment at $250^{\circ}C$ for 30min, where the PAAS LB films were formed on substrates by using LB technique. The thicknesses of one layer of PAAS and PI LB film that deposited at the surface pressure of 27mN/m were 20.9 and 4A, respectively. At low electric field, ohmic conduction($I^{\propto}$ V) was observed and the calculated electrical conductivity was about $4.23{\times}10^{-15}{\sim}9.81{\times}10^{-15}S/cm$. The dielectric constant of LB film was about 7.0.

• Journal of Radiation Industry
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• v.4 no.4
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• pp.335-339
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• 2010

In this study, the surface of polyimide (PI) films was modified using ion implantation to enhance its adhesion to a deposited copper (Cu) layer. The surfaces of the PI films were implanted with 150 keV $Xe^+$ ions at fluences varying from $1{\times}10^{14}$ to $1{\time}10^{16}ions\;cm^{-2}$. The Cu layers were then deposited on the implanted PI. The surface properties of the implanted PI film were investigated based on the contact angle measurements, Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Furthermore, the adhesive strength between the deposited Cu layer and PI film was estimated through a scratch test using a nanoindenter. As a result, the surface environment of the PI film was changed by the ion implantation, which could have a significant effect on the adhesion between the deposited Cu layer and the PI.

• Electronic Materials Letters
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• v.14 no.6
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• pp.749-754
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• 2018

Previous studies have reported on the mechanical robustness and chemical stability of flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on plastic substrates both in flat and curved states. In this study, we investigate how the polyimide (PI) substrate affects hydrogen concentration in the a-IGZO layer, which subsequently influences the device performance and stability under bias-temperature-stress. Hydrogen increases the carrier concentration in the active layer, but it also electrically deactivates intrinsic defects depending on its concentration. The influence of hydrogen varies between the TFTs fabricated on a glass substrate to those on a PI substrate. Hydrogen concentration is 5% lower in devices on a PI substrate after annealing, which increases the hysteresis characteristics from 0.22 to 0.55 V and also the threshold voltage shift under positive bias temperature stress by 2 ${\times}$ compared to the devices on a glass substrate. Hence, the analysis and control of hydrogen flux is crucial to maintaining good device performance and stability of a-IGZO TFTs.