• 한국진공학회지
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• 제1권1호
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• pp.139-144
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• 1992

Ionized Cluster Beam(ICB) 방법을 이용하여 Polyimide(PI) 박막을 증착시켰다. 증 착된 PI 박막의 결정성과 이미드화의 정도를 투과전자현미경(TEM)과 적외선 분광 스펙트럼 (FT-IR)을 이용하여 분석하였다. 최적의 조건에서 증착된 PI 박막은 이미드화가 최대로 증 가하였고 결정구조를 가짐을 관찰할 수 있었다. 이것은 다른 방법으로 제작된 PI 박막과 비 교할 때 훨씬 우수한 것이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.139-142
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• 1995

Polyimide(PI) thin films are fabricated by vapor deposition polymerization(VDP) from PMDA and DDE. The IR spectrum show that PAA the films are changed into PI films by curing. The activation energy of PI films is estimated to be 0.32 [eV] at the electric field of 0.133 [Mv/cm]. The resistivity is about 4.5${\times}$10$\_$16/ [$\Omega$$.$cm] at room temperature.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.204-204
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• 2006

The interfacial interaction along with microstructure and some properties of the polyimide(PI)/silica or polyimide/silsesquioxane hybrid nanocomposites will be discussed with reviewing recent publications including our own works. Poly(vinyl silsesquioxane) (PVSSQ), aminosilane (APS), and titania can effectively play vital roles to compatibilize the PI/silica hybrid composites by enhancing interfacial interaction or reducing agglomeration of large domains, which helps the formation of nanocomposites for the PI/silica hybrid system.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.202-205
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• 2004

We investigated the electro-optical(EO) performances of the super twisted nematic liquid crystal display(STN-LCD) on the polyimide(PI) surface using polymer film. The NLC pretilt angles generated are about $18^{\circ}$ by the rubbing alignment method on thin plastic substrates. However, the pretilt angle are at about $13^{\circ}$ lower on the glass substrate than on thin plastic substrate. Monodomain alignment of the plastic STN-LCD can be observed. A stable voltage-transmittance(V-T) curve of the plastic STN-LCD was observed on the polyimide(PI) surfaces using polymer film. Also, a faster response time for the plastic STN-LCD on the polyimide(PI) surfaces using polymer film can be achieved.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.1023-1026
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• 2001

The control of high pretilt angle for nematic liquid crystal (NLC) with negative dielectric anisotropy on the rubbed blending polyimide (PI) of homeotropic and homogeneous alignment surface was studied. High LC pretilt angle on the rubbing blending polyimide of homeotropic PI and SE-7492 surface was measured and the LC pretilt angle increased wish blending ratio and rubbing strength. However, the low LC pretilt angle on the rubbed blending polyimide of homeotropic PI and SE-150 surface was measured. The high pretilt angle of NLC can be achieved by using the blending PI surface.

• 한국전기전자재료학회논문지
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• 제17권10호
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• pp.1095-1099
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• 2004

We investigated the electro-optica](EO) performances of the super twisted nematic liquid crystal display(STN-LCD) on the polyimide(PI) surface using polymer film. The NLC(Nematic Liquid Crystal) pretilt angles generated are about 18$^{\circ}$by the rubbing alignment method on thin plastic substrates. However, the pretilt angle are at about 13$^{\circ}$ lower on the glass substrate than on thin plastic substrate. Monodomain alignment of the plastic STN-LCD can be observed. A stable voltage-transmittance(V-T) curve of the plastic STN-LCD was observed on the polyimide(PI) surfaces using polymer film. Also, a faster response time for the plastic STN-LCD on the polyimide(PI) surfaces using polymer film can be achieved.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.209-212
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• 2001

Polyimide(PI) films have been considered as the interlayer dielectric materials due to low dielectric constant, low water absorption, high gap-fill and planarization capability. The PI film was etched with using inductively coupled plasma (ICP). The etching characteristics such as etch rate and selectivity were evaluated to gas mixing ratio. High etch rate was 8300$\AA$/min and vertical profile was approximately acquired 90$^{\circ}$ at CF$_4$/(CF$_4$+O$_2$) of 0.2. The selectivies of polyimide to PR and SiO$_2$ were 1.2, 5.9, respectively. The etching profiles of PI films with an aluminum pattern were measured by a scanning electron microscope (SEM). The chemical states on the PI film surface were investigated by x-ray photoelectron spectroscopy (XPS). Radical densities of oxygen and fluorine in different gas mixing ratio of 07CF4 were investigated by optical emission spectrometer (OES).

• Journal of Electrochemical Science and Technology
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• 제6권1호
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• pp.26-33
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• 2015

In this study, cell performance and thermal stability of lithium-ion cells with a polyimide (PI) separator are investigated. In comparison to conventional polyethylene (PE) separator, the PI separator exhibits distinct advantage in microporous structure, leading to superior reliability of the cell. The cells with PI separator exhibit good cell performances as same as the cells with PE separator, but their reliability was superior to the cell with PE separator. Especially in the hot-box test at 150 and 180℃, PI separator showed a contraction percentage close to 0% at 150℃, while the PE separator showed a contraction percentage greater than 10% in both width and length. Therefore, the PI separator can be the promising candidate for separators of the next generation of lithium-ion battery.

• 폴리머
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• 제26권4호
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• pp.431-438
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• 2002

편광 푸리에 변환 적외선 분광법을 이용하여 액정 디스플레이의 배향막으로 널리 사용되는 폴리이미드 필름의 편광 자외선 조사에 따른 액정의 배향성과 열적 안정성을 연구하였다. 편광자외선이 조사된 폴리이미드의 경우, 조사된 편광자외선의 극성 방향에 평행한 폴리이미드 분자들의 우선적인 광분해 반응으로 인하여 편광자외선 조사 후 남아 있는 폴리이미드 분자들은 조사된 편광자외선 극성 방향과 수직 배향을 나타내었다. 하지만 러빙 처리된 폴리이미드 필름은 러빙 방향과 평행하게 폴리이미드 분자들의 재배향이 유도됨을 확인하였다. 또한 편광자외선이 조사된 폴리이미드 배향막이 편광자외선 조사를 통한 폴리이미드 분자들의 단편화 반응 때문에 러빙 처리된 폴리이미드 배향막 보다는 열적 안정성이 저하됨을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.209-212
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• 2001

Polyimide(PI) films have been considered as the interlayer dielectric materials due to low dielectric constant, low water absorption, high gap-fill and planarization capability. The PI mm Was etched with using inductively coupled plasma (ICP). The etching characteristics such as etch rate and selectivity were evaluated to gas mixing ratio. High etch rate was $8300{\AA}/min$ and vertical profile was approximately acquired $90^{\circ}$ at $CF_{4}/(CF_{4}+O_{2})$ of 0.2. The selectivies of polyimide to PR and $SiO_{2}$ were 1.2, 5.9, respectively. The etching profiles of PI films with an aluminum pattern were measured by a scanning electron microscope (SEM). The chemical states on the PI film surface were investigated by x-ray photoelectron spectroscopy (XPS). Radical densities of oxygen and fluorine in different gas mixing ratio of $O_{2}/CF_{4}$ were investigated by optical emission spectrometer (OES).