• 공업화학
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• 제4권3호
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• pp.544-548
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• 1993

Poly(phenylene sulfide sulfone)[PPSS]를 시간과 온도를 변화시키면서 열처리를 하였을 때 이들의 유리전이 온도($T_g$)를 DSC로서 조사하였다. 그 결과 PPSS의 $T_g$는 열처리온도가 $230^{\circ}C$까지는 열처리 시간이 길어질수록 증가하다가 평형에 도달하였다. 열처리 온도가 $245^{\circ}C$ 이상에서는 열처리 시간이 길어질수록 $T_g$가 증가하다가 어느 정도 시간이 되면 감소한 뒤 다시 증가하는 것으로 나타났다. 이 현상을 경화가 진행됨에 따른 chain extension반응과 oxidative crosslinking 및 thermal crosslinking으로 설명하였다.

• 한국염색가공학회지
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• 제25권1호
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• pp.75-81
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• 2013

Colorimetric and wash fastness data after repeated wash cycles of Poly Lactic Acid(PLA) fiber were examined with C. I. Vat Blue 1, also other comparing 2 dyes (C. I. Vat Blue 35, C. I. Vat Blue 5), in this study. The fastness of three vat dyes on PLA fiber to repeated washing according to KS K 0430 A-2 regulation increased with dyeing temperatures. The $L^*$ values of the dyed material gradually increased with increasing numbers of wash. Also the f(k) values were decreased reversely. During repeated washing, the vagrant dyes were deposited especially on nylon, polyester, cotton of the adjacent multifiber. C. I. Vat Blue 5 displayed lowest color change to repeated washing of the three dyes used.

• 한국재료학회지
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• 제5권6호
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• pp.690-698
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• 1995

Oxidized Si wafer 위에 반응가스로 Si $H_4$과 Ge $H_4$을 사용하여 RTCVD(rapid thermal chemical vapor deposition)법으로 증착온도 450~5$50^{\circ}C$에서 다결정 S $i_{1-x}$G $e_{x}$ 박막을 증착하였다. 증착된 S $i_{1-x}$, G $e_{x}$ 박막은 증착온도와 Ge $H_4$Si $H_4$입력비 변화에 따른 Ge몰분율 변화와 증착속도에 대해 고찰하였으며, XRD와 AFM(atomic force microscopy)등을 이용하여 결정상과 표면거칠기 등을 조사하였다. 실험결과, 다결정 S $i_{1-x}$G $e_{x}$ 박막은 32~37 Kcal/mole의 활성화에너지 값을 가졌으며 증착속도는 증착온도와 입력비 중가에 따라 증가하였다. 또한 조성분석으로부터 입력비 감소와 증착온도 증가에 따라 Ge몰분율이 감소함을 알 수 있었다. 증착된 S $i_{1-x}$G $e_{x}$ 박막은 450, 475$^{\circ}C$에서 임력비가 0.05일때 비정질 형태로 존재하였으며 그 이외의 실험영역에서는 다결정 형태로 존재하였다. 기존의 다결정 Si 중착온도($600^{\circ}C$이상)와 비교하여 Ge $H_4$을 첨가함으로써 비교적 낮은온도(5$50^{\circ}C$이하) 영역에서 다결정 S $i_{1-x}$G $e_{x}$ 박막을 얻을 수 있었다. 또한 증착층의 표면거칠기를 측정한 결과, 증착온도와 입력비가 증가함에 따라 표면 거칠기( $R_{i}$ )가 증가함을 알 수 있었다.을 알 수 있었다.

• Molecules and Cells
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• 제45권4호
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• pp.257-272
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• 2022

In addition to inducing apoptosis, caspase inhibition contributes to necroptosis and/or autophagy depending on the cell type and cellular context. In macrophages, necroptosis can be induced by co-treatment with Toll-like receptor (TLR) ligands (lipopolysaccharide [LPS] for TLR4 and polyinosinic-polycytidylic acid [poly I:C] for TLR3) and a cell-permeable pan-caspase inhibitor zVAD. Here, we elucidated the signaling pathways and molecular mechanisms of cell death. We showed that LPS/zVAD- and poly I:C/zVAD-induced cell death in bone marrow-derived macrophages (BMDMs) was inhibited by receptor-interacting protein kinase 1 (RIP1) inhibitor necrostatin-1 and autophagy inhibitor 3-methyladenine. Electron microscopic images displayed autophagosome/autolysosomes, and immunoblotting data revealed increased LC3II expression. Although zVAD did not affect LPS- or poly I:C-induced activation of IKK, JNK, and p38, it enhanced IRF3 and STAT1 activation as well as type I interferon (IFN) expression. In addition, zVAD inhibited ERK and Akt phosphorylation induced by LPS and poly I:C. Of note, zVAD-induced enhancement of the IRF3/IFN/STAT1 axis was abolished by necrostatin-1, while zVAD-induced inhibition of ERK and Akt was not. Our data further support the involvement of autocrine IFNs action in reactive oxygen species (ROS)-dependent necroptosis, LPS/zVAD-elicited ROS production was inhibited by necrostatin-1, neutralizing antibody of IFN receptor (IFNR) and JAK inhibitor AZD1480. Accordingly, both cell death and ROS production induced by TLR ligands plus zVAD were abrogated in STAT1 knockout macrophages. We conclude that enhanced TRIF-RIP1-dependent autocrine action of IFNβ, rather than inhibition of ERK or Akt, is involved in TLRs/zVAD-induced autophagic and necroptotic cell death via the JAK/STAT1/ROS pathway.

• Archives of Pharmacal Research
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• 제12권2호
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• pp.88-93
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• 1989

In order to obtain some informations about the effect of molecular weight on the release rate of drug from drug carrier, two types of poly-L-glutamic acid (PLGA)-cytarabine (ara-C) conjugates, PLGA-ara-C:I and PLGA-ara-C:II, were synthesized using two types of PLGA having different average molecular weight, 43,000 and 77,800, respectively. The PLGA-ara-C conjugates were synthesized by mixed anhydride method and found to be covalently linked. Both types of conjugates charged negatively at biological pH. The pH-dependent release rate of ara-C was observed in both cases, and the release rate was accelerated in basic, acidic conditions (the k values were 0.015 $day^{-1}$ at pH 7.0, 0.024 $day^{-1}$ at pH 5.0, and 0.059 $day^{-1}$ at pH 9.0 in the case of PLGA-ara-C:I) and in the presence of pretense. The time required for the release of 16.5% of ara-C from PLGA-ara-C:I were 8 hr and 144 hr in the presence and absence of protease, respectively. Although both types of conjugates showed similar drug substitution ratio, they showed different release rates. Between the two types of conjugates, PLGA-ara-C:II showed the faster release rate (0.030 vs 0.042 $day^{-1}$ in pH 7.4 phosphate buffer solution at $37^{\circ}C$) and the smaller activation energy for the release of drug (12.5 vs 7.7 Kcal/mol) than PLGA-ara-C:I. The characteristic effect of molecular weight on the release rates of PLGA-ara-C conjugates suggests that the drug release rate might be effectively controlled over a prolonged period of time by the combined use of the different types of PLGA-ara-C conjugates having different molecular weights.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.169-172
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• 2000

A-Si:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly-Si films were achieved by various anneal techniques ; isothermal, RTA, and excimer laser anneal. The TFT on as-grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from $200^{\circ}C$ to $1000^{\circ}C$. The TFT on poly-Si showed an improved $I_{on}/I_{off}$ ratio of $10^6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly-Si TFTs.

• Journal of Applied Biological Chemistry
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• 제54권4호
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• pp.279-283
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• 2011

염증의 중요한 분자학적 기전에는 cyclooxygenase-2 (COX-2)에 의한 prostaglandins (PGs) 생성과 inducible nitric oxide synthase (iNOS)에 의한 nitric oxide (NO) 생성이 있다. 많은 종류의 박테리아나 바이러스가 전사요소인 nuclear factor-${\kappa}$B(NF-${\kappa}$B)를 활성화시켜 여러 타깃 유전자의 발현을 조절해 PGs나 NO와 같은 염증물질을 유도하게 된다. 우리는 이번 실험을 통하여 phenethyl isothiocyanate (PEITC)가 toll-like receptor(TLR) agonists에 의해 유도된 NF-${\kappa}$B활성과 COX-2, iNOS 발현에 어떠한 영향을 미치는지 알아 보았다. PEITC는 lipopolysaccharide (LPS)와 polyinosinic-polycytidylic acid (poly[I:C])에 의해 유도된 NF-${\kappa}$B활성을 억제시켰다. 또한 PEITC는 LPS와 Poly[I:C]에 의해 유도된 iNOS의 발현도 억제시켰다. 하지만 PEITC는 TLR agonists들인 LPS, Poly[I:C], 2 kDa macrophage-activating lipopeptide (MALP-2), oligodeoxynucleotide 1668 (ODN1668)에 의한 COX-2 발현은 억제시키지 못하였다. 즉 PEITC가 TRIF-dependent 신호전달체계만을 조절하여 TRIF-dependent 신호전달체계에 의해 조절되는 iNOS는 억제하지만 MyD88-dependent 신호전달 체계에 의해 조절되는 COX-2는 억제하지 못한다는 것을 설명해준다. 이러한 결과는 iNOS와 COX-2가 서로 다른 메커니즘에 의해 조절된다는 것을 암시하며, PEITC가 여러 병원균들로부터 유도되는 염증반응이나 만성적인 질병들을 조절할 수 있음을 제시하는 중요한 결과이다.

• 한국재료학회지
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• 제3권2호
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• pp.158-165
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• 1993

실리콘박막의 상부에 고상반응에 의해 형성된 TiS$i_2$ 박막의 응집 거동에 미치는 기판 실리콘의 영향을 조사했다. 폴리실리콘과 어몰퍼스실리콘을 증착상태 또는 어닐링한 상태엣 TiS$i_2$를 형성시키고 90$0^{\circ}C$열처리에 따른 TiS$i_2$의 면저항값의 변화를 조사하고 XRD, SEM 및 TEM에 의한 실리콘의 조직관찰을 행했다. TiS$i_2$응집은 어몰퍼스실리콘 위의 경우가 더욱 심했다. 폴리실리콘을 어닐링하면 TiS$i_2$의 응집은 억제되며 고온에서 어닐링할수록 그 효과가 현저했다. 이는 폴리실리콘의 입도 변화보다는 증착시 존재하는 결함들이 열처리에 의해 감소된 때문이다. 폴리실리콘의 경우는 어닐링 전후에 상관없이 (110)집합조직인 주상정 조직을 갖고 있다. 어몰퍼스실리콘을 결정화시킨 경우는 (111)집합조직를 갖는 등축정 조직을 나타내었다. 실리콘의 표면에너지가 낮은 (111)면이TiS$i_2$ 막의 하부 폴리실리콘에 많이 존재할수록 응집은 촉진된다.

• 전자공학회논문지A
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• 제28A권11호
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• pp.910-914
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• 1991

This paper describes the improvement of frequency characteristic of crystal oscillator I.C using Ti-Salicide. The characteristics of transistor(drive current) using Ti-Salicide process are better than Poly-Si process, because the mobility. To know frequency characteristic of oscillator I.C, the simulation is performed using inverter buffer chain of Fan-out 10 TTL. Its result shows at once the generation of normal clock pulse in input signal and the improvement of rising and falling time.

• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.234-239
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• 2007

This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.