Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2000.04a
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- Pages.169-172
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- 2000
Properties of Thin Film a-Si:H and Poly-Si TFT's
- Ahn, Byeong-Jae (Department of Electrical and Computer Engineering, SungKyunKwan University) ;
- Kim, Do-Young (Department of Electrical and Computer Engineering, SungKyunKwan University) ;
- Yoo, Jin-Su (Department of Electrical and Computer Engineering, SungKyunKwan University) ;
- Yi, Jun-Sin (Department of Electrical and Computer Engineering, SungKyunKwan University)
- Published : 2000.04.22
Abstract
A-Si:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly-Si films were achieved by various anneal techniques ; isothermal, RTA, and excimer laser anneal. The TFT on as-grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from