• Title/Summary/Keyword: Polishing time

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An Experimental Study on Magnetic Assisted Polishing of Polycarbonate Plate for Recycling (폴리카보네이트 판재의 재활용을 위한 자기연마 가공)

  • Lee, Yong-Chul;Kim, Kwang-Sam;Kwak, Tae-Soo;Lee, Jong-Ryul
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.12 no.3
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    • pp.1-6
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    • 2013
  • This study has focused on transparency recovering of the polycarbonate by polishing its surface for recycling. The polycarbonate has many properties such as excellent mechanical strength, electrical insulating, superior heat resistance to other plastic material and especially good transparency. It has been used as barrier for the traffic noise at the roadside and the greenhouse for the palm house. But the polycarbonate has changed slightly as time goes by 10 years because of exposure to the strong sunlight and oxidization in the atmosphere, as result has lost its transparency. Magnetic assisted polishing has been utilized as an effective polishing method to recover the transparency of polycarbonate. The polycarbonate which has been used for 10 years was adopted as the sample. The first surface roughness of the sample was 1$1.23{\mu}mRa$, $7.5{\mu}mRz(DIN)$ respectively. In the experimental results, it showed that the surface roughness of the polished sample improved $0.013{\mu}mRa$, $0.08{\mu}mRz(DIN)$ from the first surface roughness respectively. The surface roughness get almost back again by magnetic assisted polishing. These results also showed that the magnetic assisted polishing was efficient machining method to reuse the polycarbonate material.

Machining Characteristics according to Electrochemical Polishing (ECP) Conditions of Stainless Steel Mesh (스테인리스 망의 전기화학 폴리싱(ECP) 조건에 따른 가공 특성)

  • Kim, Uk Su;Park, Jeong Woo
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.14 no.6
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    • pp.41-48
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    • 2015
  • Stainless steel mesh has been used as a filter in various fields, including domestic, medical, etc. However, the surface before machining may have an adverse effect the product quality and performance because it is not smooth. Especially, adsorbed impurities in the surface result in difficulty in cleaning. Therefore, in this paper, we propose an improved surface quality through electrochemical polishing (ECP). Two electrodes, composed of STS304 (anode) and copper (cathode) underwent machining with two conditions according to polishing time and current density. As the polishing time and current density increase, the surface of curvature decreases, and roughness and material removal rate (MRR) improves. The machined surface roughness and image were obtained through the atomic force microscope (AFM) and stereoscopic microscope. The study also analyzed hydrophilic effect through contact angles. This obtains corrosion resistance, smoothness, hydrophilic property, etc.

Path Planning and Control of an Articulated Robot for Polishing Large Aspherical Surface (대구경 비구면 연마를 위한 다관절 로봇의 경로 계획 및 제어)

  • Kim, Ji-Su;Lee, Won-Chang
    • Journal of IKEEE
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    • v.23 no.4
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    • pp.1387-1392
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    • 2019
  • Aspherical mirrors have lighter weight and better performance than spherical mirrors, but it is difficult to process their shape and measure the processing precision. Especially, large aperture aspherical mirrors mounted on satellites need high processing precision and long processing time. The computerized numerically controlled machine of gantry type has been used in polishing process, but it has difficulties in processing the complex shapes due to the lack of degrees of freedom. In order to overcome this problem we developed a polishing system using an articulated industrial robot. The system consists of tool path generating program, real-time robot monitoring, and control program. We show the performance of the developed system through the computer simulation and actual robot operation.

Surface Properties of Electrolytic-Polished 316L Stainless Steel Welding Tube for Semi-Conductor Fab. - As the Relation of Electrolysis Conditions with Surface Characteristics - (반도체 제조 설비용 전해 연마된 STS316L 용접강관의 표면 성질 - 전해 조건과 표면 성상의 관계를 중심으로 -)

  • Kim, Ki-Ho;Cho, Bo-Yeon
    • Journal of the Korean institute of surface engineering
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    • v.41 no.1
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    • pp.38-42
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    • 2008
  • 316L stainless steel welding tube was electrolytically polished and the inner surface characteristics of the tube were tested. Electro-polishing variables such as current, voltage, concentration of electrolyte and electropolishing time were changed to seek for optimum condition. These makes a optimum conditions for the electro-polishing as 4000 A, 9 V, 1.7 specific gravity of electrolyte, and 30 minute of electro-polishing time. It makes the surface roughness as Ra < $0.25{\mu}m$. XPS test resulted as the ratio of CrO/FeO equals or more to 3/1. AES test resulted as the thickness of CrO film of $38{\AA}$. DTA test resulted as the tube did not react with $N_2,\;H_2\;and\;O_2$ gas below 1073K. As summarize above results, the electro- polished 316L stainless steel welding tube satisfied the conditions to apply as a pipeline for semi- conductor production facility and clean room.

Recovery of ultrafine particles from Chemical-Mechanical Polishing wastewater discharged by the semiconductor industry

  • Tu, Chia-Wei;Wen, Shaw-Bing;Dahtong Ray;Shen, Yun-Hwei
    • Proceedings of the IEEK Conference
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    • 2001.10a
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    • pp.715-718
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    • 2001
  • This study uses traditional alum coagulation and sedimentation process to treat CMP wastewater from cleaning after polishing. The primary goal is to successfully recycle both solid fines and water for semiconductor manufacturing. Results indicated that CMP wastewater may be successfully treated to recover clean water and fine particles by alum coagulation. The optimum operating conditions for coagulation are as fellowing: alum dosage of 10 ppm, pH at 5, rapid mixing speed at 800 rpm, 5 min rapid mixing time, and long slow mixing time. The treated water with low turbidity and an average residual aluminum ion concentration of 0.23 ppm may be considered for reuse. The settled sludge after alum coagulation contains mainly SiO$_2$particle with a minor content of aluminum (1.7 wt%) may be considered as raw materials for glass and ceramic industry.

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Study of Several Silica Properties Influence on Sapphire CMP

  • Wang, Haibo;Zhang, Zhongxiang;Lu, Shibin
    • Journal of Electrical Engineering and Technology
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    • v.13 no.2
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    • pp.886-891
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    • 2018
  • Colloid silica using as abrasive for polishing sapphire has been extensively studied, which mechanism has also been deeply discussed. However, by the requirement of application enlargement and cost reduction, some new problems appear such as silica service life time, particle diameter mixing, etc. In this paper, several influences of colloid silica usage on sapphire CMP are examined. Results show particle diameter and concentration, pH value, service life time, particle diameter mixing heavily influence removal rate. Further analysis discloses there are two main effect aspects which are quantity of hydroxyl group, contact area for abrasive density stacking between abrasive and sapphire. Based on the discussions, a dynamic process of sapphire polishing is proposed.

Effect of Organic wax residues and particles removal by DIO3 (ozonated DI water) after Silicon Wafer batch Polishing Process (오존수를 이용한 실리콘 웨이퍼 연마 후 지용성 왁스 및 오염입자 제거의 영향)

  • Yi, Jae-Hwan;Lee, Seung-Ho;Kim, Tae-Gon;Park, Jin-Goo;Lee, Gun-Ho;Bae, So-Ik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.558-559
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    • 2007
  • A commercially de-waxer which kinds of solvent after was used to remove a thick organic wax film after polishing process and several steps of SC-1 cleanings were followed for the removal of organic wax residues and particles which requires long process time and high cost of ownership (COO). DIO3 was used to remove organic wax residues too achieve low COO. In this study, 0103 rinsing could use instead of 01 water rinsing. The process time and chemical consumption were reduced by using DIO3.

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Growth of Graphene on Electro-polished Copper Foil by Thermal CVD

  • Jin, Xiaozhan;Kim, Sung-Jin;Seo, Eun-Kyoung;Boo, Doo-Wan;Lee, Jung-Ah;Hwang, Chan-Yong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.410-410
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    • 2012
  • The continuous monolayer graphene was synthesized on electro-polished copper foil. Electro-polishing sticks off the coating layer of copper foil, which prevents the continuous graphene growth. The quality of continuous graphene is dependent on roughness of copper foil. Copper foil roughness could be controlled by changing polishing condition. The effects of working voltage (4-6 V) and time (30-70 sec) for electro-polishing were systematically examined. The change of surface roughness was checked with AFM.

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A Study on the Characteristics of a Wafer-Polishing Process at Various Machining and Oscillation Speed (웨이퍼 폴리싱 공정의 회전속도와 진폭속도에 따른 가공특성 연구)

  • Lee, Eun-Sang;Lee, Sang-Gyun;Kim, Sung-Hyun;Won, Jong-Koo
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.11 no.1
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    • pp.1-6
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    • 2012
  • The polishing of silicon wafers has an important role in semiconductor manufacturing. Generally, getting a flat surface such as a mirror is the purpose of the process. The wafer surface roughness is affected by many variables such as the characteristics of the carrier head unit, operation, speed, the pad and slurry temperature. Optimum process conditions for experimental temperature, pH value, down-force, slurry ratio are investigated, time is used as a fixed factor. This study carried out a series of experiments at varying platen, chuck rpm and oscillation cpm taking particular note of the difference between the rpm and the affect it has on the surface roughness. In this experiment determine the optimum conditions for polishing silicone wafers.

The Selection on the Optimal Condition of Si-wafer final Polishing by Combined Taguchi Method and Respond Surface Method (실험계획법을 적용한 웨이퍼 폴리싱의 최적 조건 선정에 관한 연구)

  • Won, Jong-Koo;Lee, Jung-Hun;Lee, Jung-Taik;Lee, Eun-Sang
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.17 no.1
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    • pp.21-28
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    • 2008
  • The final polishing process is based on slurry, pad, conditioner, equipment. Therefore, the concept of wafer final polishing is also necessary for repeatability of results between polished wafers. In this study, the machining conditions have a pressure, table speed, machining time and slurry ratio. This research investigated the surface characteristics that apply variable machining conditions and response surface methodology was used to obtain more flexible and optimumal condition base on Taguchi method. On the base of estimated response surface curvature from the equation and results of Taguchi method, combined design of experiment was considered to lead to optimumal condition. Finally, polished wafer was obtained mirror like surface.