• 한국기계가공학회지
• /
• 제13권5호
• /
• pp.76-81
• /
• 2014

The Engineering ceramics have some excellent properties as materials for modern mechanical and electrical components. It is, however, not easy to polish them efficiently because they are strong and hard. This study is carried out to obtain a mirror surface on engineering ceramics by surperfinishing with high efficiency. To achieve this, we conducted a series of polishing experiments using representative engineering ceramics, such as $Al_2O_3$, SiC, $Si_3N_4$ and $ZrO_2$, using diamond abrasive film from the perspective of oscillations peed, the rotational speed of the workpiece, contact roller hardness, contact pressure and feed rate. Furthermore, the polishing efficiency and characteristics for engineering ceramics are discussed on the basis of optimal polishing time and surface roughness. Our results confirmed that efficient superfinishing conditions and polishing characteristics of engineering ceramics can be determined.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2004년도 추계학술대회 논문집
• /
• pp.609-613
• /
• 2004

On this study, electrochemical polishing is adapted to ultra-fine surface for semiconductor large radius gas-tube. The system which buffing and electrochemical polishing can be performed simultaneously was constructed in connection with developing exclusive system. Based on existing papers and the research of background, electrode gap and electrolyte flow were fixed. Current density and electrochemical precision time were chosen as variables. On this study, it is objected to find optimal precision condition and precision variables on the in-process electrochemical polishing.

• 한국기계가공학회지
• /
• 제9권2호
• /
• pp.26-32
• /
• 2010

This paper reports some experimental result in grinding and polishing of silicon cathodes used in semiconductor manufacturing process. Cup shape diamond core wheels were used in experiments and the radial and tangential grinding forces were measured with surface roughness. In polishing experiments, flat type and donut type wool polishing tools were tested. The experimental results indicate that the grinding forces are proportional to the material removal rates and the surface roughness are inversely proportional to the spindle speed. The surface roughness of polished Si decreases with polishing time and higher spindle speed.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.211-213
• /
• 1999

In this paper, we documented the controlling oxide removal amount on the pattern wafer using removal rate and removal thickness of blanket wafer. There was the strong correlation relationship for both(correlation factor:0.7109). So, we could confirm the repeatability as applying for STI CMP process from the obtained linear formular. As the result of repeatability test, the difference of calculated polishing time and actual polishing time was 3.48 seconds based on total 50 lots. If this time is converted into the thickness, it is from 104$\AA$ to 167$\AA$. It is possible to be ignored because it is under the process margin.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
• /
• pp.221-224
• /
• 2002

Recently, simulation of Chemical Mechanical Polis hing is becoming more important because Process parameters on the material removal rate are complicated. And pattern-depent effects are a key concern in CMP processes. In this paper, we have been studied the changes of pattern density vs. oxide thickness with Stine's simulation model. We also have estimated the effective density using optimal window size with density mask, and have made a study of the change of oxide thickness as a function of polishing time.

• 한국화재소방학회논문지
• /
• 제32권6호
• /
• pp.108-116
• /
• 2018

구리 용융흔(Melted bead) 미세조직(Microstructure)은 변형층(Deformed layer)과 원조직(Undeformed layer)으로 구분할 수 있다. 변형층이 존재하는 경우에는 측정오류가 발생되어 연마/미세연마(Grinding/Polishing)를 통하여 변형층을 제거하고 원조직을 관측하여야 한다. 이에 따라 본 연구에서는 구리 용융흔의 미세조직 분석을 위한 연마/미세연마 절차(Process)를 제시하였다. 변형층 제거를 위해 연마재 종류/크기, 연마시간, 연마율의 상관성을 분석하였고 변형층의 두께를 $1{\mu}m$ 이하가 되도록 하였다. 연구결과, 실리콘카바이드 연마재 $15{\mu}m$ (SiC P1200) 2 min, $10{\mu}m$ (SiC P2400) 1 min, 다이아몬드 연마재 $6{\mu}m$ 8 min, $3{\mu}m$ 6 min, $1{\mu}m$ 10 min, $.25{\mu}m$ 8 min 실시하는 새로운 연마/미세연마 절차를 제시하였다. 또한 최종 단계에서 3 min 동안 콜로이달 실리카 $.04{\mu}m$로 화학적 미세연마를 실시함으로써 미세조직의 선명성을 증대시키는 방안도 제시하였다. 연마/미세연마 시간은 총 38 min이 소요되며, 기존에 제시된 시간, 절차보다 단순화 하였다.

• Transactions on Electrical and Electronic Materials
• /
• 제8권2호
• /
• pp.53-57
• /
• 2007

In this study, a novel slurry containing ceria as the abrasive particles was analyzed in terms of its frictional, thermal and kinetic attributes for interlayer dielectric (ILD) CMP application. The novel slurry was used to polish 200-mm blanket ILD wafers on an $IC1000_{TM}$ K-groove pad with in-situ conditioning. Polishing pressures ranged from 1 to 5 PSI and the sliding velocity ranged from 0.5 to 1.5 m/s. Shear force and pad temperature were measured in real time during the polishing process. The frictional analysis indicated that boundary lubrication was the dominant tribological mechanism. The measured average pad leading edge temperature increased from 26.4 to $38.4\;^{\circ}C$ with the increase in polishing power. The ILD removal rate also increased with the polishing power, ranging from 400 to 4000 A/min. The ILD removal rate deviated from Prestonian behavior at the highest $p{\times}V$ polishing condition and exhibited a strong correlation with the measured average pad leading edge temperature. A modified two-step Langmuir-Hinshelwood kinetic model was used to simulate the ILD removal rate. In this model, transient flash heating temperature is assumed to dominate the chemical reaction temperature. The model successfully captured the variable removal rate behavior at the highest $p{\times}V$ polishing condition and indicates that the polishing process was mechanical limited in the low $p{\times}V$ polishing region and became chemically and mechanically balanced with increasing polishing power.

• International Journal of Precision Engineering and Manufacturing
• /
• 제2권1호
• /
• pp.18-25
• /
• 2001

Electrolytic polishing is the anodic dissolution process in the transpassive state. It removes non-metallic inclusion and improves mechanical and corrosion resistance of stainless steel. If there is a Bailby layer, it will be removed and the true structure of the surface will be restored. Electrolytic polishing is normally used to remove a very thin layer of material from the surface of metal object. A new electrolyte composed of phosphoric, sulfuric and distilled water has been developed in this study. Two current density, high & low current density regions, have been applied in this study. In this study, In the region of high current density, there is no plateau region but excellent electrolytic polishing effect can be accomplished in short machining time because material removel process and leveling process occur simultaneously. In the low current density region, there can be found plateau region. The material removal process and leveling process occur successively. The aim of this work is to determine electrolytic polishing for stainless steel in terms of high & low current density and workpiece surface roughness.

• 한국공작기계학회논문집
• /
• 제16권5호
• /
• pp.90-95
• /
• 2007

Single side final polishing is a very important role to stabilize a wafer finally before the device process on the wafer is executed. In this study, the machining variables, such as pressure, machining time, and the velocity of pad table were adopted. These parameters have the major influence on the characteristics of wafer polishing. We investigated the surface roughness changing these variables to find the optimal polishing condition. Pad, slurry, slurry quantity, and oscillation distance were set to the fixed variables. In order to reduce defects and find a stable machining condition, a hall sensor was used on the polishing process. AE sensor was attached to the polishing machine to verify optimal condition. Applying data analysis of the sensor signal, experiments were performed. We can get better surface roughness from loading the quasi static force and improving wafer-holding method.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2008년도 추계학술대회 논문집
• /
• pp.89-90
• /
• 2008