• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.11
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• pp.7773-7780
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• 2015

Analysis of existing kettle and its heating system has been the topic for localization technology development. Test pieces are made, polished and etched for existing kettle analysis. Surface of test pieces is observed using SEM, the kettle is verified to be made by deep drawing process from Ferrite-Perlite material. The kettle is also identified to be plated $16{\sim}49{\mu}m$ of thickness with Nickel(16%). Also heat transfer characteristics based on hot wire arrangement is investigated and optimal hot wire system is developed. Developed control system detects overheating and stops the whole system on the long operating time. Developed kettle takes the performance evaluation test for volume expansion and satisfied for standard 'KS G3602'.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.171-175
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics and metal, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter level dielectrics and metal. Especially, defects like (micro-scratch) lead to severe circuit failure, and affects yield. Current conditioning method - bladder type, orbital pad motion - usually provides unsuitable pad profile during ex-situ conditioning near the end of pad life. Since much of the pad wear occurs by the mechanism of bladder tripe conditioning and its orbital motion without rotation, we need to implement new ex-situ conditioner which can prevent abnormal regional force on pad caused by bladder-type and also need to rotate the pad during conditioning. Another important study of ADPC is related to the orbital scratch of which source is assumed as diamond grit dropped from the strip during ex-situ conditioning. Scratch from diamond grit damaged wafer severely so usual1y scraped. Figure 1 shows the typical shape of scratch damaged from diamond. We suspected that intensive forces to the edge area of bladder type stripper accelerated the drop of Diamond grit during conditioning, so new designed Flat stripper was introduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.166-169
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• 2003

In this study, we evaluated the characteristics by the addition of 3 different kinds of nonionic surfactant to improve the dispersion stability of slurries. Slurry stability is an issue in any industry in which settling of particles can result in poor performance. So we observed the variation of particle size and settling rate when the concentration and addition time of surfactant are changed. When the surfactant is added after milling process, the particle size and pH became low. It is supposed that the particle agglomeration was disturbed by adsorption of surfactant on alumina abrasive. The settling rate was relatively stable when nonionic surfactant is added about 0.1~1.0 wt%. When molecular weight(MW) is too small like Brij 35, it was appeared low effect on dispersion stability. Because it can't prevent coagulation and subsequent settling with too small MW. The proper quality of MW for slurry stability was presented about 500,000. Consequently, the addition of nonionic surfactant to alumina slurry has been shown to have very good effect on slurry stabilization. If we apply this results to copper CMP process, it is thought that we will be able to obtain better yield.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.527-527
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• 2007

CMP가 1980년 IBM에 의해 반도체 웨이퍼의 표면 연마를 위해 적용된 후, 많은 연구 개발의 노력으로 반도체 집적회로의 제조 공정에서 필수 핵심기술이 되었으나, 소모자재(연마패드, 탄성지지대, 슬러리, 패드 컨디셔너)의 비용이 CMP 공정 비용의 70% 이상을 차지하는 등 제조단가가 높다는 단점을 극복할 수가 없었다. 특히, 고가의 슬러리가 차지하는 비중이 40% 이상을 넘고 있어, 슬러리 원액의 소모량을 줄이기 위한 연구들이 현재 활발히 연구 중이다. 슬러리의 변수로는 연마입자의 종류 및 특성, 용액의 pH, 연마입자의 슬러리내 안정성 등이 있다. 슬러리내 연마입자는 연마량과 균일도 측면에서 밀접한 관계를 가지고 있다. 또한, 연마제의 영향에 따라 연마율의 차이 즉, CMP 특성의 변화를 보이고 있기 때문에 투입량 또한 최적화가 필요하다. 본 연구에서는 새로운 연마제의 특성을 알아보기 위해 탈이온수(de-ionized water; DIW)에 $CeO_2,\;MnO_2,\;ZrO_2$ 등을 첨가한 후 분산시간에 따른 연마 특성과 atomic force microscopy (AFM)분석을 통해 표면 거칠기를 비교 분석하였다. 그리고, 세 가지 종류의 연마제를 각각 1wt%, 3wt%, 5wt% 첨가하여 산화막에 대한 CMP 특성을 알아본 후, scanning electron microscopy (SEM) 측정과 입도 분석을 통해 그 가능성을 알아보았다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.649-650
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• 2005

반도체는 고집적화, 고속도화, 저전력화를 목적으로 발전하고 있다. 이를 위하여 design rule의 감소, 새로운 물질과 프로세스의 적용 등 많은 연구가 이루어지고 있으며, RC delay time을 줄이기 위한 Cu 와 저유전율 재료의 적용이 그 대표적인 예라 할 수 있다. Cu 배선은 기존의 Al 배선에 비하여 높은 전자이동 (electro-migration)과 응력 이동 (stress-migration) 저항을 가짐으로써 전기적인 성능 (electrical performance) 에서 이점을 가지고 있다. 반도체에서의 Cu 배선 구조는 평탄화된 표면 및 배선들 사이에서의 좋은 전기적인 절연성을 가져야 하며, 이는 디싱(dishing)과 에로젼(erosion)의 중요한 인자가 된다. 기존의 평탄화 공정인 Cu CMP(Chemical Mechanical Polishing)에 있어서 이러한 디싱, 에로전과 같은 결함은 선결되어져야 할 문제로 인식되고 있다. 따라서 본 연구에서는 이러한 결합들을 감소시키기 위한 새로운 평탄화 방법으로 Cu gap-filling 을 하는 동시에 평탄화된 표면을 이루는 ECMD(Electro-Chemical Mechanical Deposition) 공정의 전기적 기계적 특성을 파악하였다.

• Korean Journal of Materials Research
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• v.16 no.12
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• pp.731-738
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• 2006

It is seriously considered using Al CMP (chemical mechanical planarization) process for the next generation 45 nm Al wiring process. Al CMP is known that it has a possibility of reducing process time and steps comparing with conventional RIE (reactive ion etching) method. Also, it is more cost effective than Cu CMP and better electrical conductivity than W via process. In this study, we investigated 4 different kinds of slurries based on abrasives for reducing scratches which contributed to make defects in Al CMP. The abrasives used in this experiment were alumina, fumed silica, alkaline colloidal silica, and acidic colloidal silica. Al CMP process was conducted as functions of abrasive contents, $H_3PO_4$ contents and pressures to find out the optimized parameters and conditions. Al removal rates were slowed over 2 wt% of slurry contents in all types of slurries. The removal rates of alumina and fumed silica slurries were increased by phosphoric acid but acidic colloidal slurry was slightly increased at 2 vol% and soon decreased. The excessive addition of phosphoric acid affected the particle size distributions and increased scratches. Polishing pressure increased not only the removal rate but also the surface scratches. Acidic colloidal silica slurry showed the highest removal rate and the lowest roughness values among the 4 different slurry types.

• Korean Journal of Optics and Photonics
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• v.19 no.4
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• pp.249-254
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• 2008

We developed a new x-ray image sensor utilizing a reflection-mode liquid crystal panel as its sensitive element, and tested its functionality by using it to obtain an x-ray image of a printed circuit board. In the liquid crystal x-ray image sensors hitherto reported, the liquid crystal layer is in direct contact with the photoconductive film which is deposited on a glass substrate. In the fabrication of the new x-ray image sensor, a liquid crystal panel is fabricated in the first step by using a pair of glass plates of a few centimeters thicknrss. Then one of the glass substrates is ground until its thickness is reduced to about $60\;{\mu}m$. After polishing the glass plate, dielectric films for high reflectance at 630 nm, a film of amorphous selenium for photoconduction, and a transparent conductive film for electrode are deposited in sequence. The new x-ray image sensor has several merits: primarily, fabrication of a large area sensor is more easily compared with the old fashioned x-ray image sensors. Since the reflection type liquid crystal panel has a very steep response curve, the new x-ray sensor has much more sensitivity to x-rays compared with the conventional x-ray area sensor, and the radiation dosage can be reduced down to less then 20%. By combining the new x-ray sensor with CCD camera technology, real-time x-ray images can be easily captured. We report the structure, fabrication process and characteristics of the new x-ray image sensor.

• Journal of Korea Entertainment Industry Association
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• v.15 no.4
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• pp.101-111
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• 2021

This paper is a study that analyzes the use and techniques of rap in music that entered Melon Chart, one of the major music sites in Korea, during 2020. Among the songs that entered the chart, reflecting the public's preference, the trend of rap music, an important element of hip-hop music, is analyzed and musical features such as representative artists or frequently used rhythm patterns are analyzed. Through this paper, characteristics of rap music favored by the public and artists in recent popular music have been organized and formalized, and based on this, the elements of etude development for technical polishing are summarized. Through this, it is hoped that just like the long-time analyzed and structured performance techniques such as vocals and instruments, various styles of rap music can develop into a systematic and step-by-step technique system for students who want to learn and practice it.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.130-135
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• 2023

Plasma-resistant ceramic (PRC) is a material used to prevent internal damage in plasma processing equipment for semiconductors and displays. The challenge is to suppress particles falling off from damaged surfaces and increase retention time in order to improve productivity and introduce the latest miniaturization process. Here, we confirmed the effect of suppressing plasma deterioration and reducing the etch rate through surface treatment of existing PRC with an initial illumination level of 200 nm. In particular, quartz glass showed a decrease in etch rate of up to 10%. Furthermore, it is believed that micro-scale secondary particles formed on the microstructure of each material grow as crystals during the fluoridation process. This is a factor that can act as a killer defect when dropped, and is an essential consideration when analyzing plasma resistance. The plasma etching suppression effect of the initial illumination is thought to be due to partial over etching at the dihedral angle of the material due to the sputtering of re-emission of Ar+-based cations. This means that plasma damage due to densification can also be interpreted in existing PRC studies. The research results are significant in that they present surface treatment conditions that can be directly applied to existing PRC for mass production and a new perspective to analyze plasma resistance in addition to simple etching rates.

• Corrosion Science and Technology
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• v.9 no.6
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• pp.276-280
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• 2010

Copper(Cu) as an interconnecting metal layer can replace aluminum (Al) in IC fabrication since Cu has low electrical resistivity, showing high immunity to electromigration compared to Al. However, it is very difficult for copper to be patterned by the dry etching processes. The chemical mechanical polishing (CMP) process has been introduced and widely used as the mainstream patterning technique for Cu in the fabrication of deep submicron integrated circuits in light of its capability to reduce surface roughness. But this process leaves a large amount of residues on the wafer surface, which must be removed by the post-CMP cleaning processes. Copper corrosion is one of the critical issues for the copper metallization process. Thus, in order to understand the copper corrosion problems in post-CMP cleaning solutions and study the effects of DC biases and post-CMP cleaning solution concentrations on the Cu film, a constant voltage was supplied at various concentrations, and then the output currents were measured and recorded with time. Most of the cases, the current was steadily decreased (i.e. resistance was increased by the oxidation). In the lowest concentration case only, the current was steadily increased with the scarce fluctuations. The higher the constant supplied DC voltage values, the higher the initial output current and the saturated current values. However the time to be taken for it to be saturated was almost the same for all the DC supplied voltage values. It was indicated that the oxide formation was not dependent on the supplied voltage values and 1 V was more than enough to form the oxide. With applied voltages lower than 3 V combined with any concentration, the perforation through the oxide film rarely took place due to the insufficient driving force (voltage) and the copper oxidation ceased. However, with the voltage higher than 3 V, the copper ions were started to diffuse out through the oxide film and thus made pores to be formed on the oxide surface, causing the current to increase and a part of the exposed copper film inside the pores gets back to be oxidized and the rest of it was remained without any further oxidation, causing the current back to decrease a little bit. With increasing the applied DC bias value, the shorter time to be taken for copper ions to be diffused out through the copper oxide film. From the discussions above, it could be concluded that the oxide film was formed and grown by the copper ion diffusion first and then the reaction with any oxidant in the post-CMP cleaning solution.