• 한국식품과학회지
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• 제15권2호
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• pp.136-140
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• 1983

도정수율별 보리의 수화특성(水和特性)을 $20{\sim}60^{\circ}C$ 범위에서 조사하고 속도론적으로 해석하였다. 흡수량(吸水量)은 수화시간(水和時間)의 평방근에 비례하였으며 흡수양상(吸水樣相)은 흡수량(吸水量) $0.45{\sim}0.55g\;H_2O/g$ solid 이후에서 변화하였다. 수화속도(水和速度)는 도정수율 50>70>95>90%>무도정맥의 순서였으며 수화온도(水和溫度)가 높을수록 증가하였다. 이 때 곡립내부(穀粒內部)로의 물의 확산도(擴散度)는 Arrhenius방정식에 의거하여 변화하였으며 활성화에너지는 도정맥의 경우 $6.9{\sim}9.5Kcal/mole$, 무도정맥의 경우 11.6Kcal/mole이었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.58-58
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• 2009

Uniformity related issues in chemical mechanical polishing (CMP) are within wafer non-uniformity (WIWNU), wafer to wafer non-uniformity (WTWNU), planarity and dishing/erosion. Here, the WIWNU that originates from spatial distribution of independent variables such as temperature, sliding distance, down force and material removal rate (MRR) during CMP, relies to spatial dependency. Among various sources of spatial irregularity, hardness and modulus of pad and surface roughness in sources for pad uniformity are great, especially. So, we investigated the spatial variation of pad surface characteristics using pad measuring system (PMS) and roughness measuring system. Reduced peak height ($R_{pk}$) of roughness parameter shows a strong correlation with the removal rate, and the distribution of relative sliding distance onwafer during polishing has an effect on the variation of $R_{pk}$ and WIWNU. Also, the results of pad wear profile thorough developed pad profiler well coincides with the kinematical simulation of conditioning, and it can contribute for the enhancement of WIWNU in CMP process.

• 대한치과교정학회지
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• 제22권4호
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• pp.823-836
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• 1992

Guiding a tooth along an arch wire results in a counteracting frictional force among arch wires, bracket and ligature. This frictional forces should be eliminated or minimized when orthodontic teeth movement is being planned. The purpose of this study was to evaluate the changes of width, cross-sectional forms and surface morphologies of stainless steel wire and $Elgiloy^{\circledR}$ wire after electropolising. Experimental variables included in this experiment were arch wire materials, current, electrolyte temperature and polishing time. Wire widths were measured by micrometer and cross-sectional forms and surface morphologies were examined with optical microscope and scanning electron microcope. The results were as follows: 1. The mean and standard deviation of widths of stainless steel wire and $Elgiloy^{\circledR}$ wire varying polishing time with condition of $249A/dm^2$ and $20^{\circ}C,\;249A/dm^2$ and, $332A/dm^2$ and $20^{\circ}C$ and $332A/dm^2$ and $250^{\circ}C$ were obtained. 2. With increasing polishing time, the widths of stainless steel wire and $Elgiloy^{\circledR}$ wire became decreased proportionally 3. The changes of widths of stainless steel wire and $Elgiloy^{\circledR}$ wire were statistically insignificant between $20^{\circ}C$ group and $25^{\circ}C$ group, but significant between $249A/dm^2$ group and $332A/dm^2$ group. 4 The cross-sectional forms of wire after electropolishing were not changed in stainless steel wire, and while it were changed to rounded corners in $Elgiloy^{\circledR}$ wire. 5. The surface morphologies of wire after electropolishing were scratch-absent and more smoothened both in stainless steel wire and $Elgiloy^{\circledR}$ wire.

• Restorative Dentistry and Endodontics
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• 제16권2호
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• pp.18-32
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• 1991

The purpose of this study was to observe characteristic properties of amalgam through the polarization curves and SEM images from 4 type amalgams (Amalcap, Shofu spherical. Dispersalloy and Tytin) with 3 different surface finish procedures (polishing, burnishing and carving) by using the potentiostats (EG & GPARC) and SEM (Jeol JSM-35). After each amalgam alloy and Hg was triturated as the direction of the manufacturer by means of mechanical amalgamator (Samki), the triturated mass was inserted into the cylndrical metal mold which was 12 mm in diameter and 10 mm in height and was pressed with $100kg/cm^2$. 4 specimens of each type amalgam were burnished with egg burnisher and another 4 specimens of each type amalgam were carved with Hollenback carver. Above 8 specimens and remaining untreated 4 specimens were stored at room temperature for about 7 days. Untreated 4 specimens of each type amalgam were polished with abrasive papers (Deer) from #400 to #1200 and finally on the polishing cloth with $0.5{\mu}m$ and $0.06{\mu}m$ $Al_2O_3 $ powder suspended water. Anodic polarization measurements was employed to compare the corrosion behaviours of the amalgams in 0.9% saline solution at $37^{\circ}C$. The open circuit potential was determined after 30 minutes immersion of specimen in electrolyte. The scan rate was 1 mV/sec and the surface area of amalgam exposed to the solution was $0.64cm^2$ for each specimen. All the potentials reported are with respect to a saturated calomel electrode (SCE). SEM images of each specimen were taken after + 800 mV (SCE) polarization. The results were as follows: 1. The corrosion potential of high copper amalgam was more anodic than that of low copper amalgam. 2. The polished amalgam were more resistant to corrosion than any other burnished and carved amalgam. 3. In the case of polishing, current density of high copper amalgam was lower than that of low copper amalgam.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.136-139
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• 2004

The requirement of planarity, such as with-in-wafer nonuniformity, post thickness range, have become increasingly stringent as critical dimensions of devices are decreased and a better control of a planarity become important. The key factors influencing the planarity capability of the CMP process have been well understood through numerous related experiments. These usually include parameters such as process pressures, relative velocities, slurry temperature, polishing pad materials and polishing head structure. Many study have been done about polishing pad and its groove structure because it's considered as one of the key factors which can decide wafer uniformity directly. But, not many study have been done about polisher head structure, especially about polisher head plate design. The purpose of this paper is to know how the plate structure can affect wafer uniformity and how to deteriorate wafer yield. Furthermore, we studied several new designed plate to improve wafer uniformity and also improve wafer yield.

• 한국재료학회지
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• 제10권11호
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• pp.784-788
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• 2000

The Vickers microhardness was measured on the basal (0001) plane of sapphire single crystals in the temperature range from 25$^{\circ}C$to 1000$^{\circ}C$. The substructure surrounding the indents was investigated using selective chemical polishing and etching, optical microscopy, and trasmission electron microscopy (TEM). At room temperature, cracks were predominant, and at intermediate temperatures (400$^{\circ}C$and 600$^{\circ}C$), extensive rhombohedral twinning was observed. On the other hand, at higher temperatures, prism plane slip bands on prism plane {1120}(원문참조) were dominant in the microstructure. TEM observations revealed that the dislocation substructure at the vicinity of the indents consisted of fairly straight dislocations lying in basal and/or prism planes and aligned along the <1100> and <1120> directions. The details of the glide dissociation of perfect <110> screw dislocations into three collinear 1/3<1100> partials on the prism plane and the Peierls potential for sapphire single crystals were discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.645-646
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• 2005

The increasing hydroxyl ($OH^-$) groups diffused into the TEOS and then weakened reactants such as H-C-O-Si bonds on the surface of TEOS film were actively generated with the increase of slurry temperature. These soft reactants on the surface of TEOS film could be removed easily by mechanical parts of CMP.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.68-71
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• 2000

In this paper, we have measured the oxygen contents by FTIR in silicon wafer various process technology(slicing, lapping, polishing). The measured data are also compared with the data of etching process(KOH, Bright etching). Also we have measured the surface morpology in backside silicon wafer after etching treatment and etch pit density due to OISF after 4 step high temperature annealing process with optical microscope.

• 한국화재소방학회논문지
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• 제11권3호
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• pp.15-23
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• 1997

In this study, the alumina for gas sensor was prepared by anodic oxidation. It was stable thermally and chemically, and pore diameter and pore distribution was uniform. And the shape of pore was cylinderical. The aluminum plate was carried out by the thermal oxidation, chemical polishing and electropolishing pretreatment. The pore diameter, pore size distribution, pore density and thickness of alumina was observed with the change of reaction temperature, electrolyte concentration and current density. As a results, It was able to use for carrier because alumina which was prepared by anodic oxidationhas uniform pore size distribution.

• 한국기계가공학회지
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• 제17권6호
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• pp.91-97
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• 2018

Chemical mechanical polishing(CMP) realizes a surface planarity through combined mechanical and chemical means. In CMP process, Preston equation is known as one of the most general approximation of the removal rate. Effects of pressure and relative speed on the mechanical property of Cu CMP has been investigated. On the other hand, The amount of abrasion also increased with changes in pressure and speed, resulting in a proportional increase of temperature during CMP. Especially this temperature is an important factor to change chemical reaction in a Cu CMP. However, when the slurry temperature became higher than $70^{\circ}C$, the removal rate went lower due to abrasives aggregation and scratching occurred on the Cu film. Therefore, it was found that the slurry temperature should not exceed $70^{\circ}C$ during Cu CMP. Finally, authors could increase the pressure, speed and slurry temperature up to a ceratin level to improve the removal rate without surface defects.