Measurement of Oxygen by FTIR in Silicon wafer process steps

실리콘 웨이퍼 공정스텝에서 FTIR에 의한 산소의 측정

In this paper, we have measured the oxygen contents by FTIR in silicon wafer various process technology(slicing, lapping, polishing). The measured data are also compared with the data of etching process(KOH, Bright etching). Also we have measured the surface morpology in backside silicon wafer after etching treatment and etch pit density due to OISF after 4 step high temperature annealing process with optical microscope.