• Title/Summary/Keyword: Polishing temperature

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A Study on the Distribution of Friction Heat generated by CMP Process (CMP 공정에서 발생하는 연마온도 분포에 관한 연구)

  • 김형재;권대희;정해도;이용숙;신영재
    • Journal of the Korean Society for Precision Engineering
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    • v.20 no.3
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    • pp.42-49
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    • 2003
  • In this paper, we provide the results of polishing temperature distribution by way of infrared ray measurement system as well as polishing resistance, which can be interpreted as tribological aspects of CMP, using force measurement system. The results include the trend of polishing temperature, its distribution profile and temperature change during polishing. The results indicate that temperature affects greatly to the removal rate. Polishing temperature increases gradually and reaches steady state temperature and the period of temperature change occurs first tens of seconds. Furthermore, the friction force also varies as the same pattern with polishing temperature from high friction to low. These results suggest that the first period of the whole polishing time greatly affects the nonuniformity of removal rate.

Effect of polishing solution temperature and times by electro-polishing in dental casting Co-Cr-Mo alloy (치과 주조용 Co-Cr-Mo alloy에서 전해용액 온도와 전해시간에 따른 전해연마의 특성)

  • Jang, Jae-Young;Song, Jae-Sang;Nah, Jung-Sook
    • Journal of Technologic Dentistry
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    • v.34 no.2
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    • pp.145-153
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    • 2012
  • Purpose: The purpose of this study was to investigate to effect of the electro-polishing condition according to electrolyte temperature and current and polishing time on surface morphology and composition by scanning electron microscopy(SEM) and energy dispersive X-ray spectrometer(EDS) in dental casting Co-Cr-Mo alloys. Methods: 16 specimens were divided into 4 groups which have each 4 specimens. The size of specimens were 10mm wide and 5mm height. the electro-polishing of specimens are by polishing solution temperature and times in Co-Cr-Mo alloy by SEM and EDS analysis. Results: The results shows that most smooth surface is obtained when electro-polishing is performed at $49^{\circ}C$ for 30-40sec with electro gap of 10mm and 8 voltage. Conclusion: The morphologies of specimens after electro-polishing were scratch absent and significant between at $40^{\circ}C$ for 45sec and at $49^{\circ}C$ for 45sec.

Experimental and Numerical Analysis of A Novel Ceria Based Abrasive Slurry for Interlayer Dielectric Chemical Mechanical Planarization

  • Zhuanga, Yun;Borucki, Leonard;Philipossian, Ara;Dien, Eric;Ennahali, Mohamed;Michel, George;Laborie, Bernard;Zhuang, Yun;Keswani, Manish;Rosales-Yeomans, Daniel;Lee, Hyo-Sang;Philipossian, Ara
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.2
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    • pp.53-57
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    • 2007
  • In this study, a novel slurry containing ceria as the abrasive particles was analyzed in terms of its frictional, thermal and kinetic attributes for interlayer dielectric (ILD) CMP application. The novel slurry was used to polish 200-mm blanket ILD wafers on an $IC1000_{TM}$ K-groove pad with in-situ conditioning. Polishing pressures ranged from 1 to 5 PSI and the sliding velocity ranged from 0.5 to 1.5 m/s. Shear force and pad temperature were measured in real time during the polishing process. The frictional analysis indicated that boundary lubrication was the dominant tribological mechanism. The measured average pad leading edge temperature increased from 26.4 to $38.4\;^{\circ}C$ with the increase in polishing power. The ILD removal rate also increased with the polishing power, ranging from 400 to 4000 A/min. The ILD removal rate deviated from Prestonian behavior at the highest $p{\times}V$ polishing condition and exhibited a strong correlation with the measured average pad leading edge temperature. A modified two-step Langmuir-Hinshelwood kinetic model was used to simulate the ILD removal rate. In this model, transient flash heating temperature is assumed to dominate the chemical reaction temperature. The model successfully captured the variable removal rate behavior at the highest $p{\times}V$ polishing condition and indicates that the polishing process was mechanical limited in the low $p{\times}V$ polishing region and became chemically and mechanically balanced with increasing polishing power.

TEMPERATURE CHANGES IN THE PULP ACCORDING TO VAR10US RESTORATIVE MATERIALS AND BASES DURING POLISHING PROCEDURE (연마시 여러 가지 수복재와 이장재의 사용에 따른 치수내 온도변화)

  • Baik, Byeong-Ju;Lee, Doo-Cheol;Kim, Mi-Ra;Kim, Jae-Gon
    • Journal of the korean academy of Pediatric Dentistry
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    • v.27 no.3
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    • pp.410-418
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    • 2000
  • An in vitro study was performed to evaluate the effect of four variables on the temperature rise produced by polishing of restorations. The four variables were : restorative material, base, thickness of remaining dentin, continuous polishing or intermittent polishing. Class V cavities were cut on extracted molar and restored with composite resin, resin-modified glass ionomer cement, compomer, amalgam on the various bases (glass ionomer cement, zinc oxide eugenol cement, zinc phosphate cement) Dentin thickness under the restoration was 0.5mm, 1.5mm. Polishing was done with an aluminum oxide-coated disc. Polishing time was continuous or intermittent for up to 1 minute. Intra-pulpal temperature increased almost linearly in all cases. Amalgam produced highest temperature rises at the pulp, while the composite resin, resin-modified glass ionomer cement and compomer were not different for each other. The rate and extent of temperature rising of amalgam restoration was reduced by presence of a cement base. Zinc oxide eugenol cement bases showed the highest temperature rise, while glass ionomer cement, zinc phosphate cement were not different to the untreated tooth Thickness of remaining dentin was only significant for the amalgam restoration. Continuous polishing produced higher temperature rise than intermittent polishing.

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Finite Element Analysis of Large-Electron-Beam Polishing-Induced Temperature Distribution (대면적 전자빔 폴리싱 공정 시 발생하는 온도 분포 유한요소해석 연구)

  • Kim, J.S.;Kim, J.S.;Kang, E.G.;Lee, S.W.;Park, H.W.
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.22 no.6
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    • pp.931-936
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    • 2013
  • Recently, the use of large-electron-beam polishing for polishing complex metal surfaces has been proposed. In this study, the temperature induced by a large electron beam was predicted using the heat transfer theory. A finite element (FE) model of a continuous wave (CW) electron beam was constructed assuming Gaussian distribution. The temperature distribution and melting depth of an SUS304 sample were predicted by changing electron-beam polishing process parameters such as energy density and beam velocity. The results obtained using the developed FE model were compared with experimental results for verifying the melting depth prediction capability of the developed FE model.

Technical Overview on the Electron Backscattered Diffraction Sample Preparation

  • Kim, Dong-Ik;Kim, Byung-Kyu;Kim, Ju-Heon
    • Applied Microscopy
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    • v.45 no.4
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    • pp.218-224
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    • 2015
  • A technical overview on the various sample preparation methods for electron backscattered diffraction (EBSD) analysis is carried out. The mechanical polishing with colloidal silica finish, electro-chemical polishing, dual layer coating and ion beam milling are introduced for the common sample preparation methods for EBSD observation and some issues that are frequently neglected by the common EBSD users but should be considered to get a reliable EBSD data are discussed. This overview would be especially helpful to the people who know what EBSD technique is but do not get a reliable EBSD data because of difficulties in sample preparation.

The Study on the Machining Characteristics of 300mm Wafer Polishing for Optimal Machining Condition (최적 가공 조건 선정을 위한 300mm 웨이퍼 폴리싱의 가공특성 연구)

  • Won, Jong-Koo;Lee, Jung-Taik;Lee, Eun-Sang
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.17 no.2
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    • pp.1-6
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    • 2008
  • In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon wafer. For further improvement of the ultra precision surface and flatness of Si wafer necessary to high density ULSI, it is known that polishing is very important. However, most of these investigation was experiment less than 300mm diameter. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This study reports the machining variables that has major influence on the characteristic of wafer polishing. It was adapted to polishing pressure, machining speed, and the slurry mix ratio, the optimum condition is selected by ultra precision wafer polishing using load cell and infrared temperature sensor. The optimum machining condition is selected a result data that use a pressure and table speed data. By using optimum condition, it achieves a ultra precision mirror like surface.

Polishing Mechanism of TEOS-CMP with High-temperature Slurry by Surface Analysis

  • Kim, Nam-Hoon;Seo, Yong-Jin;Ko, Pil-Ju;Lee, Woo-Sun
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.4
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    • pp.164-168
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    • 2005
  • Effects of high-temperature slurry were investigated on the chemical mechanical polishing (CMP) performance of tetra-ethyl ortho-silicate (TEOS) film with silica and ceria slurries by the surface analysis of X-ray photoelectron spectroscopy (XPS). The pH showed a slight tendency to decrease with increasing slurry temperature, which means that the hydroxyl $(OH^-)$ groups increased in slurry as the slurry temperature increased and then they diffused into the TEOS film. The surface of TEOS film became hydro-carbonated by the diffused hydroxyl groups. The hydro-carbonated surface of TEOS film could be removed more easily. Consequently, the removal rate of TEOS film improved dramatically with increasing slurry temperature.

TEMPERATURE CHANGE IN THE PULP ACCORDING TO POLISHING CONDITION OF VARIOUS RESTORATIVE MATERIALS (여러가지 수복물의 polishing조건에 따른 치수 온도변화)

  • Baik, Byeong-Ju;Park, Jong-Ha;Yang, Jeong-Suk;Lee, Seung-Young;Kim, Jae-Gon
    • Journal of the korean academy of Pediatric Dentistry
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    • v.26 no.2
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    • pp.365-376
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    • 1999
  • The importance of finishing and polishing the restoration has been described by several authors. The final step provides for improved metallurgical properties, better marginal adaptation, reduced plaque accumulation. Unfortunately, finishing of the restorations can produce damage from temperature rises at the pulpal wall. The aim of this study was to determine the changes in temperature can be occurred during the use of finishing and polishing instruments under a variety of conditions. ; with or without a water coolant, intermittent or continuous operation, high or low rotation speed, remaining dentin thickness and various restorative materials. Class V preparations were cut on extracted molars and restored with composite resin(Z 100), resin-modified glass ionomer cements(Dyract, Fuji II LC), and amalgam. Finishing was done with aluminum oxide coated disc($Sof-lex^{(R)}$ polishing disc, 3M, USA). The following results were obtained. 1. The rise of temperature during polishing of amalgam restorations was the highest among the all experimental groups except polishing with water coolant(P<0.05). However, there were no statistical differences in temperature rises between Z 100, Dyract and Fuji II LC(P>0.05). 2. The intrapulpal temperature was greatly influenced by the applied time, and intermittent polishing was showed significantly lower temperature rises than continuous polishing(P<0.01). 3. The intrapulpal temperature was increased according to the application of polishing regard less of using water coolant. However, polishing with water coolant showed significantly lower temperature in the pulp than not used water coolant(P<0.01).

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