• 제목/요약/키워드: Polishing temperature

검색결과 194건 처리시간 0.034초

CMP 공정에서 발생하는 연마온도 분포에 관한 연구 (A Study on the Distribution of Friction Heat generated by CMP Process)

  • 김형재;권대희;정해도;이용숙;신영재
    • 한국정밀공학회지
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    • 제20권3호
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    • pp.42-49
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    • 2003
  • In this paper, we provide the results of polishing temperature distribution by way of infrared ray measurement system as well as polishing resistance, which can be interpreted as tribological aspects of CMP, using force measurement system. The results include the trend of polishing temperature, its distribution profile and temperature change during polishing. The results indicate that temperature affects greatly to the removal rate. Polishing temperature increases gradually and reaches steady state temperature and the period of temperature change occurs first tens of seconds. Furthermore, the friction force also varies as the same pattern with polishing temperature from high friction to low. These results suggest that the first period of the whole polishing time greatly affects the nonuniformity of removal rate.

치과 주조용 Co-Cr-Mo alloy에서 전해용액 온도와 전해시간에 따른 전해연마의 특성 (Effect of polishing solution temperature and times by electro-polishing in dental casting Co-Cr-Mo alloy)

  • 장재영;송재상;나정숙
    • 대한치과기공학회지
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    • 제34권2호
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    • pp.145-153
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    • 2012
  • Purpose: The purpose of this study was to investigate to effect of the electro-polishing condition according to electrolyte temperature and current and polishing time on surface morphology and composition by scanning electron microscopy(SEM) and energy dispersive X-ray spectrometer(EDS) in dental casting Co-Cr-Mo alloys. Methods: 16 specimens were divided into 4 groups which have each 4 specimens. The size of specimens were 10mm wide and 5mm height. the electro-polishing of specimens are by polishing solution temperature and times in Co-Cr-Mo alloy by SEM and EDS analysis. Results: The results shows that most smooth surface is obtained when electro-polishing is performed at $49^{\circ}C$ for 30-40sec with electro gap of 10mm and 8 voltage. Conclusion: The morphologies of specimens after electro-polishing were scratch absent and significant between at $40^{\circ}C$ for 45sec and at $49^{\circ}C$ for 45sec.

Experimental and Numerical Analysis of A Novel Ceria Based Abrasive Slurry for Interlayer Dielectric Chemical Mechanical Planarization

  • Zhuanga, Yun;Borucki, Leonard;Philipossian, Ara;Dien, Eric;Ennahali, Mohamed;Michel, George;Laborie, Bernard;Zhuang, Yun;Keswani, Manish;Rosales-Yeomans, Daniel;Lee, Hyo-Sang;Philipossian, Ara
    • Transactions on Electrical and Electronic Materials
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    • 제8권2호
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    • pp.53-57
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    • 2007
  • In this study, a novel slurry containing ceria as the abrasive particles was analyzed in terms of its frictional, thermal and kinetic attributes for interlayer dielectric (ILD) CMP application. The novel slurry was used to polish 200-mm blanket ILD wafers on an $IC1000_{TM}$ K-groove pad with in-situ conditioning. Polishing pressures ranged from 1 to 5 PSI and the sliding velocity ranged from 0.5 to 1.5 m/s. Shear force and pad temperature were measured in real time during the polishing process. The frictional analysis indicated that boundary lubrication was the dominant tribological mechanism. The measured average pad leading edge temperature increased from 26.4 to $38.4\;^{\circ}C$ with the increase in polishing power. The ILD removal rate also increased with the polishing power, ranging from 400 to 4000 A/min. The ILD removal rate deviated from Prestonian behavior at the highest $p{\times}V$ polishing condition and exhibited a strong correlation with the measured average pad leading edge temperature. A modified two-step Langmuir-Hinshelwood kinetic model was used to simulate the ILD removal rate. In this model, transient flash heating temperature is assumed to dominate the chemical reaction temperature. The model successfully captured the variable removal rate behavior at the highest $p{\times}V$ polishing condition and indicates that the polishing process was mechanical limited in the low $p{\times}V$ polishing region and became chemically and mechanically balanced with increasing polishing power.

연마시 여러 가지 수복재와 이장재의 사용에 따른 치수내 온도변화 (TEMPERATURE CHANGES IN THE PULP ACCORDING TO VAR10US RESTORATIVE MATERIALS AND BASES DURING POLISHING PROCEDURE)

  • 백병주;이두철;김미라;김재곤
    • 대한소아치과학회지
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    • 제27권3호
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    • pp.410-418
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    • 2000
  • 치아수복시 마무리 과정에서의 연마는 수복물의 수명 및 심미성을 결정하는 중요한 과정으로서 연마시 마찰열의 발생으로 인하여 치수에 위해작용을 줄 수 있으므로 주의를 하여야 한다. 여러 가지 수복 재료를 연마하는 동안 치수내에서 발생하는 열의 변화를 수복물 종류, 이장재 종류, 잔존 상아질의 두께, 연마 시간의 차이에 따라 조사하고자 발치된 구치에 수복물을 충전한 후 aluminum-oxide coated disc를 이용하여 연마하는 과정에서 thermocouple을 이용하여 치수내 온도값을 측정하였으며, 이에 대한 통계적 분석을 시행하여 다음과 같은 결과를 얻었다. 모든 경우에서 연마 시간이 증가함에 따라 치수내 온도가 증가하였으며, 아말감 연마시 다른 수복 재료에 비해 큰 온도 증가치를 보였으나 composite resin, glass ionomer cement, 그리고 compomer에서는 연마에 따른 온도 변화차가 관찰되지 않았다. 아말감 하방에 이장재를 사용한 경우에 이장재를 사용하지 않았을 경우에 비해 온도 증가량이 적었으며, 다른 수복재에서는 이장재 사용여부에 따른 온도 증가량의 차이는 존재하지 않았다. 본 실험에서 사용된 이장재 중 glass ionomer cement와 zinc phosphate cement에 비해 zinc oxide eugenol cement의 열 차단 효과가 가장 작았다. 수복물에 간헐적인 연마를 시행한 경우, 지속적인 연마를 시행한 경우에 비해 온도 증가량이 작았으며, 아말감 하방의 잔존 상아질의 두께가 감소하면 온도 증가량이 더 커졌으나, 다른 세 종류의 수복재에서는 잔존 상아질의 두께에 따른 차이가 발생하지 않았다.

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대면적 전자빔 폴리싱 공정 시 발생하는 온도 분포 유한요소해석 연구 (Finite Element Analysis of Large-Electron-Beam Polishing-Induced Temperature Distribution)

  • 김지수;김진석;강은구;이석우;박형욱
    • 한국생산제조학회지
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    • 제22권6호
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    • pp.931-936
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    • 2013
  • Recently, the use of large-electron-beam polishing for polishing complex metal surfaces has been proposed. In this study, the temperature induced by a large electron beam was predicted using the heat transfer theory. A finite element (FE) model of a continuous wave (CW) electron beam was constructed assuming Gaussian distribution. The temperature distribution and melting depth of an SUS304 sample were predicted by changing electron-beam polishing process parameters such as energy density and beam velocity. The results obtained using the developed FE model were compared with experimental results for verifying the melting depth prediction capability of the developed FE model.

Technical Overview on the Electron Backscattered Diffraction Sample Preparation

  • Kim, Dong-Ik;Kim, Byung-Kyu;Kim, Ju-Heon
    • Applied Microscopy
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    • 제45권4호
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    • pp.218-224
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    • 2015
  • A technical overview on the various sample preparation methods for electron backscattered diffraction (EBSD) analysis is carried out. The mechanical polishing with colloidal silica finish, electro-chemical polishing, dual layer coating and ion beam milling are introduced for the common sample preparation methods for EBSD observation and some issues that are frequently neglected by the common EBSD users but should be considered to get a reliable EBSD data are discussed. This overview would be especially helpful to the people who know what EBSD technique is but do not get a reliable EBSD data because of difficulties in sample preparation.

최적 가공 조건 선정을 위한 300mm 웨이퍼 폴리싱의 가공특성 연구 (The Study on the Machining Characteristics of 300mm Wafer Polishing for Optimal Machining Condition)

  • 원종구;이정택;이은상
    • 한국공작기계학회논문집
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    • 제17권2호
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    • pp.1-6
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    • 2008
  • In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon wafer. For further improvement of the ultra precision surface and flatness of Si wafer necessary to high density ULSI, it is known that polishing is very important. However, most of these investigation was experiment less than 300mm diameter. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This study reports the machining variables that has major influence on the characteristic of wafer polishing. It was adapted to polishing pressure, machining speed, and the slurry mix ratio, the optimum condition is selected by ultra precision wafer polishing using load cell and infrared temperature sensor. The optimum machining condition is selected a result data that use a pressure and table speed data. By using optimum condition, it achieves a ultra precision mirror like surface.

Polishing Mechanism of TEOS-CMP with High-temperature Slurry by Surface Analysis

  • Kim, Nam-Hoon;Seo, Yong-Jin;Ko, Pil-Ju;Lee, Woo-Sun
    • Transactions on Electrical and Electronic Materials
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    • 제6권4호
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    • pp.164-168
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    • 2005
  • Effects of high-temperature slurry were investigated on the chemical mechanical polishing (CMP) performance of tetra-ethyl ortho-silicate (TEOS) film with silica and ceria slurries by the surface analysis of X-ray photoelectron spectroscopy (XPS). The pH showed a slight tendency to decrease with increasing slurry temperature, which means that the hydroxyl $(OH^-)$ groups increased in slurry as the slurry temperature increased and then they diffused into the TEOS film. The surface of TEOS film became hydro-carbonated by the diffused hydroxyl groups. The hydro-carbonated surface of TEOS film could be removed more easily. Consequently, the removal rate of TEOS film improved dramatically with increasing slurry temperature.

여러가지 수복물의 polishing조건에 따른 치수 온도변화 (TEMPERATURE CHANGE IN THE PULP ACCORDING TO POLISHING CONDITION OF VARIOUS RESTORATIVE MATERIALS)

  • 백병주;박종하;양정숙;이승영;김재곤
    • 대한소아치과학회지
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    • 제26권2호
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    • pp.365-376
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    • 1999
  • 수복물의 연마의 중요성에 대하여 많은 연구들이 이루어져 왔으며, 이는 수복물의 금속성질의 개선, 변연적합성의 증가 그리고 치태축적의 감소 등을 이유로 시행된다. 그러나 불행하게도 수복물에 대한 연마시 열의 발생으로 인하여 치수부위에 손상을 초래하므로 열의 발생을 최소화하려는 노력이 뒤따라야 할 것이다. 이에 본 연구에서는 수복물의 연마시 회전속도의 차이, 냉각제의 적용 유무, 여러 종류의 수복물의 차이, 간헐적인 연마와 연속적인 연마의 차이 그리고 잔존 상아질의 두께의 정도에 따른 치수내부에서의 열의 변화를 알아보기 위하여 발거된 구치에 5급 와동을 형성한 후 복합레진(Z100, 3M co), resin-modified GIC(Dyract, Fuji II LC) 그리고 아말감(Degussa) 등으로 충전하였으며, 다양한 조건에서의 연마를 시행, 치수내부에서의 열의 변화를 측정하여 다음과 같은 결과를 얻었다. 1. Amalgam을 건조한 상태에서 연마시 다른 재료에 비해 가장 큰 치수내 온도 상승을 보였다(P<0.05). 그러나, Z100, Dyract Fuji II LC 간에는 간헐적 수복물 연마와 연속적인 수복물 연마 모두 어떤 경우든 유의차가 없었다(P>0.05). 2. 같은 조건으로 연마를 시행했을 때, 간헐적인 연마보다 연속적인 연마를 한 경우가 치수내 온도가 더 크게 상승하였다(P<0.01). 3. 아말감과 Dyract 에 있어서는 잔존 상아질의 차이에 따른 치수내 온도변화에 유의한 차이를 보였으나(P<0.01), Fuji II LC에 있어서는 유의성이 없었다(P>0.05). 4. 냉각제의 유무에는 관계없이 어떤 경우든 시간에 따른 온도 상승을 보였다. 그러나, 냉각제를 사용한 경우가 냉각제를 사용하지 않은 경우에 비해 온도 상승값이 훨씬 작았다(P<0.01).

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