• Journal of the Korean Society of Manufacturing Process Engineers
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• v.17 no.6
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• pp.91-97
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• 2018

Chemical mechanical polishing(CMP) realizes a surface planarity through combined mechanical and chemical means. In CMP process, Preston equation is known as one of the most general approximation of the removal rate. Effects of pressure and relative speed on the mechanical property of Cu CMP has been investigated. On the other hand, The amount of abrasion also increased with changes in pressure and speed, resulting in a proportional increase of temperature during CMP. Especially this temperature is an important factor to change chemical reaction in a Cu CMP. However, when the slurry temperature became higher than $70^{\circ}C$, the removal rate went lower due to abrasives aggregation and scratching occurred on the Cu film. Therefore, it was found that the slurry temperature should not exceed $70^{\circ}C$ during Cu CMP. Finally, authors could increase the pressure, speed and slurry temperature up to a ceratin level to improve the removal rate without surface defects.

• Tribology and Lubricants
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• v.25 no.6
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• pp.404-408
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• 2009

In this paper, the relationship between the material removal rate and the interfacial mechanical properties at particle-surface contact situation, which can be seen in an abrasive machining process using micro/nano-sized particles, was discussed. Friction and stiffnesses were measured experimentally on an atomic force microscope (AFM) by using colloidal probes which have a silica colloid particle in place of tip to simulate a particle-flat surface contact in an abrasive machining process. From the experimental investigation and theoretical contact analysis, the interfacial contact properties such as lateral stiffness of contact, friction, the material removal rate were presented with respect to some of material surfaces and the relationship between the properties as well.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.28-31
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• 2003

Copper CMP in terms of the effect of slurry chemicals (oxidizer, corrosion inhibitor, complexing agent) on the process characteristics has been performed. Corrosion inhibitors, benzotriazole (BTA) and tolytriazol (TTA) were used to control the removal rate and avoid isotropic etching. When complexing agent is added with H$_2$O$_2$ 2 wt% in the slurry, the corrosion rate was presented very well. In the case of complexing agent, it was estimated that the proper concentration is 1 wt%, because the addition of tartaric acid to alumina slurry causes low pH and the slurry dispersion stability become unstable. There was not much change of the removal rate. It was assumed that BTA 0.05 wt% is suitable. Most of all, it was appeared that BTA is possible to be replaced by TTA. TTA was distinguished for the effect among complexing agents.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1891-1894
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• 1999

We can classify the scratches after CMP process into micro-scratch and macro-scratches according to the scratch size, scratch intensity and defect map, etc. The micro-scratches on wafer after CMP process are discussed in this paper. From many causes, major factor that influences the formation of micro-scratch is known as particle size distribution of slurry.(1) It is indefinite what size or type of particle can cause micro-scratch on wafer surface, but there is possibility caused by large particle over 1um. The best way for controlling these large particle to inflow is to use the slurry filter on POU(Point of user). But the slurry filter(especially, depth-type filter) has sometimes the problem which makes more sever micro-scratches on wafer surface after CMP. We studied that depth-type slurry filter has what kind of week-points and the number of scratch could be reduced by lowering slurry flow rate and by using high spray bar which sprays DIW on polishing pad with high pressure.

• Journal of the Korean Society for Precision Engineering
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• v.33 no.3
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• pp.167-172
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• 2016

The computer controlled optical surfacing (CCOS) technique provides superior fabrication performance for optical mirrors when compared to the conventional method, which relies heavily on the skill of the optician. The CCOS technique provides improvements in terms of mass production, low cost, and short polishing time, and are achieved by estimating and controlling the moving speed of the tool and toolpath through a numerical analysis of the tool influence function (TIF). Hence, the exact estimation of various TIFs is critical for high convergence rates and high form accuracy in the CCOS process. In this paper, we suggest a new model for TIFs, which can be applied for various tool shapes, different velocity distributions, and non-uniform tool pressure distributions. Our proposed TIFs were also verified by comparisons with experimental results. We anticipate that these new TIFs will have a major role in improving the form accuracy and shortening the polishing time by increasing the accuracy of the material removal rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.38-41
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• 2004

The oxidizer plays an important role in the metal chemical mechanical polishing(CMP) slurry. Currently, the oxidizer used in CMP slurry is nearly divided into several kinds such as $Fe(NO_3)_3$, $H_2O_2$, $KIO_3$, and $H_5IO_6$. It is generally known that oxidizer character of $H_2O_2$ is more effective than other oxidizers. In this work, we have been studied the characteristics for the $H_2O_2$ concentration of copper slurry, which can applicable in the recent semiconductor manufacturing process. Also, it plays an important role in the planarization of copper films using copper slurries during micro-electronic device fabrication. In this work, we confirmed that removal rate of Cu/TaN changed by $H_2O_2$ concentration on copper slurry. And we used $KMnO_4$ in the measurement method of $H_2O_2$. In analysis results, we confirmed that the difference of results is large. We thought that the difference was due to organic component existence. So in titration method of $H_2O_2$ concentration, we used $Na_2S_2O_3$ instead of $KMnO_4$ as solution. Consequently, using the titration method, we could calculate correct data reduced error. And $H_2O_2$ concentration has been adjusted to the target concentration of 0.1 wt%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.185-188
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• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2 \; (PN_2)$ gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and $PN_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.5
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• pp.191-195
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• 2002

Chemical mechanical Polishing (CMP) process is widely used for the global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2$ ($PN_2$) gas, point of use (POU) slurry filler and high spray bar (HSB) were installed. Our experimental results show that DW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.13 no.4
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• pp.13-20
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• 2014

In this paper, the effects of a nonionic surfactant on the etch uniformity and the etch profile during the wet-etching process of high-purity aluminum were investigated for the fabrication of uniform micropattern arrays. To improve the surface roughness of a high-purity aluminum plate, a mechanical lapping process and an electrolytic polishing process were used. After electrolytic polishing process, the surface roughness, Ra, of the high-purity aluminum plate was improved from $1.25{\mu}m$ to $0.02{\mu}m$. A photoresist was used as an etching mask during the aluminum etching process, where the mixture of phosphoric acid, acetic acid, nitric acid, a nonionic surfactant and water was used as the aluminum etchant. Different amounts of the Triton X-100 nonionic surfactant were added to the aluminum etchant to investigate the effect of a nonionic surfactant during the wet-etching process of high-purity aluminum. The etch rate and the etch profile were measured by an optical interferometer and a scanning electron microscope.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.39 no.2
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• pp.115-120
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• 1994

To find out the effects of preharvest sprouted degrees of barley on yield, grain quality and germination rate, various sprouted grains were planted. The grains sprouted upto 2 mm and 4mm of root lengths showed regerminating rates of 68% and 49% respectively, and those above 4mm of root length decreased seriously in regerminating rate. First of all, the PI (promptness index) of sprouted barley compared with that of intact barley decreased conspicuously even in 2mm of root length. Grain yield decreased inversely with the growth of root lengths of sprouted grains. The times required to polish the naked barley up to polishing yield of 72% and husked one upto that of 64% were shortened inversely with the root lengths of sprouted grains. The rate of split kernel against sound one after polishing increased greatly by 17.6% to 36% in sprouted barley compared to 2% to 3.5% of the control which presoaked in water for 2 hours. Whiteness indexes of polished kernels of the sprouted barley and the control were higher than that of intact one. The index, however, was lowered inversely with root lengths in sprouted barley.