• 분석과학
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• 제19권5호
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• pp.394-399
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• 2006

본 연구에서는 반도체 웨이퍼 연마 공정에 사용한 산화제와 첨가제의 연마 속도에 미치는 영향과 전기 화학적 특성에 대해 조사하였다. 산화제로는 과산화수소, 질산화 철과 요오드산 칼륨을 사용하였으며, 이들은 연마액의 pH와 종류에 따라 텅스텐 막질에서 상이한 산화반응을 나타내었다. 이러한 차이점은 연마성능에 영향을 끼치며, 과산화수소는 식각반응이 질산화 철과 요오드산 칼륨에서는 부동태 반응이 우세하였다. 그리고 염기성 화합물인 TMAH와 KOH를 연마액에 첨가하였을 때 텅스텐에 대한 전위 에너지 변화 증가 및 연마 제거속도 증가를 확인할 수 있었으며, 제타 전위 값의 절대 값 증가를 통해 분산성 향상에도 도움이 되는 것을 알 수 있었다. 마지막으로 음이온 계면 활성제중 평균 분자량이 25만인 폴리아크릴산을 100 ppm 첨가시 연마 입자의 뭉침 현상이 줄어들면서 분산성 향상에 효과적인 것을 알 수 있었다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 추계학술대회
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• pp.1522-1527
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• 2004

In this paper, slurry fluid motion, abrasive particle motion, and effects of groove sizing on the pads are numerically investigated in the 2D geometry. Groove depth is optimized in order to maximized the abrasive effect. The simulation results are analyzed in terms of shear stress on pad, groove and wafer, streamline and velocity vector. The change of groove depth entails vortex pattern change, and consequently affects material removal rate. Numerical analysis is very helpful for disclosing polishing mechanism and local physics.

• 대한기계학회논문집A
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• 제26권5호
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• pp.976-985
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• 2002

The purpose of this paper is that the roughness(Rrms = 31$\AA$, Rp-v = 270$\AA$) of ITO thin film deposited by sputtering method for OELD is improved to Rrms $\leq$ 10$\AA$, Rp-v $\leq$ 80$\AA$ by chemical mechanical polishing(CMP). First, ITO thin films are polished with a variety of consumables (Pads, Slurries) to choose proper some for the roughness improvement and the CMP mechanism of ITO thin films is demonstrated on the ground of the experiment results. Henceforth, the CMP characteristics (Removal rate, Non-uniformity) of chosen consumables are evaluated according to processing conditions (Polishing pressures, Table velocities) and suitable conditions for ITO film CMP are selected. Finally, the electrical and optical properties (Sheet resistance, Transmittance) of ITO thin films are investigated to verify whether or not ITO thin film are still suitable for OELD after polished.

• 한국전기전자재료학회논문지
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• 제19권10호
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• pp.889-893
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• 2006

Chemical mechanical polishing (CMP) achieves surface planrity through combined mechanical and chemical means. The role of slurry is very important in metal CMP. Slurry used in metal CMP normally consists of oxidizers, complexing agents, corrosion inhibitors and abrasives. This paper investigates the effects of citric acid as a complexing agent for Cu CMP with $H_2O_2$. In order to study chemical effects of citric acid, X-ray photoelectron spectroscopy (XPS) was peformed on Cu sample after etching test. XPS results reveal that CuO, $Cu(OH)_2$ layer decrease but $CU/CU_2O$ layer increase on Cu sample surface. To investigate nanomechanical properties of Cu sample surface, nanoindentation was performed on Cu sample. Results of nanoindentation indicate wear resistance of Cu surface decrease. According to decrease of wear resistance on Cu surface removal rate increases from $285\;{\AA}/min\;to\;8645\;{\AA}/min$ in Cu CMP.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.34-37
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• 2001

As the integrated circuit device shrinks to smaller dimensions, chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the inter-metal dielectrics (IMD) layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. To prevent agglomerated slurry particle from inflow, we installed 0.5${\mu}m$ POU (point of use) filter, which is depth-type filter and has 80% filtering efficiency for the $1.0{\mu}m$ size particle. In this paper, we studied the relationship between defect generation and pad count to understand the exact efficiency of the slurry filtration, and to find out the appropriate pad usage. Our preliminary results showed that it is impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize the flow rate of slurry to overcome depth type filters weak-point, and to install the high spray of de-ionized Water (DIW) with high pressure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.731-734
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. Polishing pads play a key role in CMP, which has been recognized as a critical step to improve the topography of wafers for semiconductor fabrication. It is investigated the performance of $SiO_2-CMP$ process using commercial silica slurry as a pad conditioning temperature increased after CMP process. This study also showed the change of SEM images in the pore geometry on the CMP pad surface after use with a different pad conditioning temperature.

• 한국생산제조학회지
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• 제22권2호
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• pp.298-303
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• 2013

Magnetic abrasive polishing is one of the most promising finishing methods applicable to complex surfaces. Nevertheless this process has a low efficiency when applied to very hardened materials. For this reason, EP-MAP hybrid process was developed. EP-MAP process is expected to machine complex and hardened materials. In this research, deburring process using EP-MAP hybrid process was proposed. EP-MAP deburring process is applied to micro channel, thereby it can obtain both deburring process and polishing process. EP-MAP deburring process on the micro channel was performed. Through design of experiment method, error of height in this process according to process parameter is analyzed. When the level 1 parameter A(magnetic flux density) and level 2 parameter B(electric potential), C(working gap) and level 3 parameter D(feed rate) are applied in the deburring process using EP-MAP hybrid process, it provides optimum result of EP-MAP hybrid deburring process.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.86-89
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• 2003

Chemical Mechanical Planarization(CMP) has been accepted as the most effective processes for ultra large scale integrated (ULSI) chip manufacturing. However, as the polishing process continues, pad pores get to be glazed by polishing residues, which hinder the supply of new slurry. And pad surface is ununiformly deformed as real contact distance. These defects make material removal rate(MRR) decrease with a number of polishied wafer. Also the desired within-chip planarity, within wafer non-uniformity(WIWNU) and wafer to wafer non-uniformity(WTWNU) arc unable to be achieved. So, pad conditioning in CMP Process is essential to overcome these defects. The eletroplated or brazed diamond conditioner is used as the conventional conditioning. And. allumina long fiber, the jet power of high pressure deionized water, vacuum compression. ultrasonic conditioner aided by cavitation effect and ceramic plate conditioner are once used or under investigation. But. these methods arc not sufficient for ununiformly deformed pad surface and the limits of conditioning effect. So this paper focuses on the characteristics of diamond conditioner which reopens glazed pores and removes ununiformly deformed pad away.

• 한국해양공학회지
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• 제19권6호통권67호
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• pp.72-77
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• 2005

The materials used in a ship screw propeller are commonly made with brass. The seawater corrosion and seawater cavitation of the screw propeller reduces the propulsive performance of the ship. In screw manufacturing, the corrosion rust of the screw propeller is removed through a hand grinding method. The grinding process produces dust of the heavy metals from the brass. The dust creates a poor working environment that is harmful to the health of the workers. An automatic corrosionrust removing apparatus, using a blasting method, was developed for the improvement of screw polishing conditions and its working environment. The performance of this apparatus was investigated by surface roughness, weight loss rate, hardness, electrochemical corrosion resistance, and cavitation erosion, after removing of the corrosion rust under various blasting conditions. Two medias of alumina and emery were used in this experiment. The surface roughness and hardness of the screw were improved by this apparatus. The electrochemical corrosion potential (Ecorr) and current density (Icorr) were measured by the dynamic polarization method, using a potentiostat,under the conditions of surface polishing with grinding, blasting, wire brushing, and fine sand papering. The test results prove that the new corrosion rust-removing apparatus improves the surface performance of a screw propeller.

• 대한기계학회논문집A
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• 제33권5호
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• pp.514-520
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• 2009

In configuring an automated polishing system, a monitoring scheme to estimate the surface roughness is necessary. In this study, a precision polishing process, magnetic abrasive finishing (MAF), along with an in-process monitoring setup was investigated. A magnetic tooling is connected to a CNC machining to polish the surface of stavax(S136) die steel workpieces. During finishing experiments, both AE signals and force signals were sampled and analysed. The finishing results show that MAF has nano scale finishing capability (upto 8nm in surface roughness) and the sensor signals have strong correlations with the parameters such as gap between the tool and workpiece, feed rate and abrasive size. In addition, the signals were utilized as the input parameters of artificial neural networks to predict generated surface roughness. Among the three networks constructed -AE rms input, force input, AE+force input- the ANN with sensor fusion (AE+force) produced most stable results. From above, it has been shown that the proposed sensor fusion scheme is appropriate for the monitoring and prediction of the nano scale precision finishing process.