• Title/Summary/Keyword: Polishing force

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Effect of Particle Size of Ceria Coated Silica and Polishing Pressure on Chemical Mechanical Polishing of Oxide Film

  • Kim, Hwan-Chul;Lim, Hyung-Mi;Kim, Dae-Sung;Lee, Seung-Ho
    • Transactions on Electrical and Electronic Materials
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    • v.7 no.4
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    • pp.167-172
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    • 2006
  • Submicron colloidal silica coated with ceria were prepared by mixing of silica and nano ceria particles and modified by hydrothermal reaction. The polishing efficiency of the ceria coated silica slurry was tested over oxide film on silicon wafer. By changing the polishing pressure in the range of $140{\sim}420g/cm^2$ with the ceria coated silica slurries in $100{\sim}300nm$, rates, WIWNU and friction force were measured. The removal rate was in the order of 200, 100, and 300 nm size silica coated with ceria. It was known that the smaller particle size gives the higher removal rate with higher contact area in Cu slurry. In the case of oxide film, the indentation volume as well as contact area gives effect on the removal rate depending on the size of abrasives. The indentation volume increase with the size of abrasive particles, which results to higher removal rate. The highest removal rate in 200 nm silica core coated with ceria is discussed as proper combination of indentation and contact area effect.

AFM based Surface Verifications of Pulse Electrochemical Polishing for Various Frequency Conditions (주파수 변화에 따른 AFM 기반의 펄스 전기화학 폴리싱 표면특성 분석)

  • Kim, Young-Bin;Kim, Jong-Tye;Ahn, Dong-Gyu;Park, Jong-Rak;Jeong, Sang-Hwa;Park, Jeong-Woo
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.21 no.2
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    • pp.246-251
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    • 2012
  • Pulse electrochemical polishing process has been used to improve mechanical properties such as surface roughness and corrosion resistance on conductive metallic materials. In addition, pulse electrochemical polishing process with various frequency may produce a lustrous, smoother, deburred and cleaned surface on workpiece. The aim of this paper is to study surface characteristics of pulse electrochemical polishing for various frequency conditions using AFM to verify localized surface variation in nanometer scale.

Surface polishing of Micro channel using Magneto-Rheological fluid (MR유체를 이용한 미세 채널구조물의 표면연마)

  • 이승환;김욱배;민병권;이상조
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.1873-1876
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    • 2003
  • Magneto-rheological polishing is a new technology used in precision polishing. It utilizes magneto-rheological fluid. nonmagnetic polishing abrasive, aqueous carrier fluids in magnetic field to remove material from a part surface. Silicon micro channel as work piece is fixed in the slurry which is made of MR fluid and CeO$_2$(10 vol%) abrasive particles. And permanent magnet rotate in the slurry to transfers magnetic force to abrasive particles by increasing yield strength of MR fluid. so, the obtained bottom surface roughness of micro channel by experiment reduced to Ra 0.010 $\mu\textrm{m}$ Rmax 0.103 $\mu\textrm{m}$ and finwall surface roughness of micro channel reduced to Ra 0.018 $\mu\textrm{m}$ Rmax 0.468 $\mu\textrm{m}$. At optimum conditions of variables, the workpiece as silicon micro channel have about 24 times smaller surface roughness than before polishing.

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The local polishing of material surface using the $CO_2$ laser ($CO_2$ 레이저를 이용한 시료 표면의 국부 폴리싱)

  • Kim, Young-Seop;Shon, Ik-Bu;Noh, Young-Chul
    • Laser Solutions
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    • v.12 no.2
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    • pp.7-10
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    • 2009
  • In this paper, we study experimentally the local polishing of $SiO_2$ surface using the $CO_2$ laser. For laser local polishing, we polished to remove the grooves or to be reformed the surface of grooves after forming the grooves on the material surface. We measured the reflectance, transmittance, and beam profile in order to measure the roughness of polished surface. The Atom Force Microscope (AFM) is used to measure roughness of local polishing surface. We can predict that the laser polishing contribute to the removal of generated debris and surface roughness on the micro processing.

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A Study on Monitoring of the MAP for Non-magnetic Material by AE Signal Analysis (AE신호 분석을 통한 비자성체의 자기연마 모니터링에 관한 연구)

  • Lee, Sung-Ho;Kim, Sang-Oh;Kwak, Jae-Seob
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.20 no.3
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    • pp.304-309
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    • 2011
  • A monitoring system for magnetic abrasive polishing process is necessary to ensure the polishing products the high quality and integrity. Acoustic emission (AE) signal is known to reflect the material removal phenomena in other machining processes. In a case of the magnetic abrasive polishing of non-magnetic materials, application of AE method is very difficult because of lower machining force on the surface of workpiece and the level of AE signal is extremely lower. In this study, AE sensor-based monitoring system is applied to the magnetic abrasive polishing. The relation between the level of the AE RMS and the surface roughness during the magnetic abrasive polishing of magnesium alloy steel is investigated.

Design of a Novel Polishing Tool Mechanism with 3-axis Compliance

  • Gi-Seong Kim;Han Sung Kim
    • Journal of the Korean Society of Industry Convergence
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    • v.26 no.6_1
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    • pp.993-999
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    • 2023
  • In this paper, a novel polishing tool mechanism with 3-axis compliance is presented, which consists of 2-axis rotational and 1-axis linear compliances in series. The 2-axis rotational compliance mechanism is made up of four cantilever beams for adjusting rotational stiffness and one flexure universal joint at the center for constraining the z-axis deflection. The 2-axis rotational compliance can mechanically adjust the polishing tool to machined surfaces. The polishing press force can be simply controlled by using a linear spring along the z-axis. The 2-axis rotational and 1-axis linear compliance design is decoupled. The stiffness analysis of the 2-axis compliance mechanism was performed based on link compliance matrix and rigid body transformation. A 3-axis polishing tool was designed by configuring the 2-axis compliance mechanism and one linear spring.

Effects of different finishing/polishing protocols and systems for monolithic zirconia on surface topography, phase transformation, and biofilm formation

  • Mai, Hang-Nga;Hong, Su-Hyung;Kim, Sung-Hun;Lee, Du-Hyeong
    • The Journal of Advanced Prosthodontics
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    • v.11 no.2
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    • pp.81-87
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    • 2019
  • PURPOSE. The purpose of this study was to evaluate the effects of various protocols and systems for finishing and polishing monolithic zirconia on surface topography, phase transformation, and bacterial adhesion. MATERIALS AND METHODS. Three hundred monolithic zirconia specimens were fabricated and then treated with three finishing and polishing systems (Jota [JO], Meisinger [ME], and Edenta [ED]) using four surface treatment protocols: coarse finishing alone (C); coarse finishing and medium polishing (CM); coarse finishing and fine polishing (CF); and coarse finishing, medium polishing, and fine polishing (CMF). Surface roughness, crystal phase transformation, and bacterial adhesion were evaluated using atomic force microscopy, X-ray diffraction, and streptococcal biofilm formation assay, respectively. One-way and two-way analysis of variance with Tukey post hoc tests were used to analyze the results (${\alpha}=.05$). RESULTS. In this study, the surface treatment protocols and systems had significant effects on the resulting roughness. The CMF protocol produced the lowest roughness values, followed by CM and CF. Use of the JO system produced the lowest roughness values and the smallest biofilm mass, while the ME system produced the smallest partial transformation ratio. The ED group exhibited the highest roughness values, biofilm mass, and partial transformation ratio. CONCLUSION. Stepwise surface treatment of monolithic zirconia, combined with careful polishing system selection, is essential to obtaining optimal microstructural and biological surface results.

Effects of Friction Energy on Polishing Results in CMP Process (CMP 공정에서 마찰에너지가 연마결과에 미치는 영향)

  • Lee, Hyun-Seop;Park, Boum-Young;Kim, Goo-Youn;Kim, Hyoung-Jae;Seo, Heon-Deok;Jeong, Hae-Do
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.28 no.11
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    • pp.1807-1812
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    • 2004
  • The application of chemical mechanical polishing(CMP) has a long history. Recently, CMP has been used in the planarization of the interlayer dielectric(ILD) and metal used to form the multilevel interconnections between each layers. Therefore, much research has been conducted to understand the basic mechanism of the CMP process. CMP performed by the down force and the relative speed between pad and wafer with slurry is typical tribo-system. In general, studies have indicated that removal rate is relative to energy. Accordingly, in this study, CMP results will be analyzed by a viewpoint of the friction energy using friction force measurement. The results show that energy would not constant in the same removal rate conditions