• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.55-56
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• 2006

In this paper, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ($Ba_{0.6}Sr_{0.4}TiO_3$), PZT ($Pb_{1.1}(Zr_{0.52}TiO_{0.48})O_3$) and BTO ($BaTiO_3$) ferroelectric film are fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of BST, PZT, BTO films. Their dependence on slurry composition was also investigated. We expect that our results will be useful promise of global planarization for ferroelectric random access memories (FRAM) application in the near future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.297-302
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• 2005

Chemical mechanical polishing(CMP) performances can be optimized by several process parameters such as equipment and consumables (pad, backing film and slurry). Pad properties are important in determining removal rate and planarization ability of a CMP process. It is investigated the performance of oxide CMP process using commercial silica slurry after the pad conditioning temperature was varied. Conditioning process with the high temperature made the slurry be unrestricted to flow and be hold, which made the removal rate of oxide film increase. The pad became softer and flexible as the conditioning temperature increases. Then the softer pad provided the better surface planarity of oxide film without defect.

• Korean Journal of Materials Research
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• v.32 no.4
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• pp.230-236
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• 2022

The formation behavior of a passive state film on the surface of STS304 in electrolytic solution was analyzed to determine its metallic ion composition. The properties of passive state films vary depending on the Fe and Cr ions in the electrolytic solution. It was observed that the passive state film surface became flat and glossy as the concentration of Fe and Cr ions in the electrolytic solution increased. The corrosion resistance property of the passive state film was proportional to the amount of Fe and Cr in the electrolytic solution. An initial passive state film with high Fe concentration was formed on the surface of STS304 during early electrolytic polishing. Osmotic pressure of Fe ions occurs between the passive state film and electrolytic solution due to the Fe ion concentration gradient. The Fe in the passive state film is dissolved into the electrolyte, and Cr fills up the Fe ion vacancies. As a result, a good corrosion-resistant floating film was formed. The more Fe ions in the electrolytic solution, the faster the film is formed, and as a result, a flat passive state film containing a large amount of Cr can be formed.

• Korean Journal of Materials Research
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• v.16 no.5
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• pp.308-311
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• 2006

The purpose of this study is to investigate the difference of the wafer nanotopography impact on the oxide-film thickness variation between the STI CMP using ceria slurry and STI CMP using fumed silica slurry. The nanotopography impact on the oxide-film thickness variation after STI CMP using ceria slurry is 2.8 times higher than that after STI CMP using fumed silica slurry. It is attributed that the STI CMP using ceria slurry follows non-Prestonian polishing behavior while that using fumed silica slurry follows Prestonian polishing behavior.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.935-938
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• 1997

Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.11a
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• pp.172-176
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• 1996

The rapid structural change of ULSI chip includes minimum features, multilevel interconnection and large diameter wafers. Demands for the advanced chip structure necessitates the development of enhanced deposition, etching and planarization techniques. Planarization refers to a process that make rugged surfaces flat and uniform. One of the emerging technologies for planarization is chemical mechanical polishing(CMP). Chemical and mechanical removal actions occur during CMP, and both appear to be closely interrelated. The purpose of this study is the optimal application of the slurry to the various types of device materials during CMP. We investigates the effect of slurry on CMP characteristics for thermal oxide and sputtered Al blanket wafers. Results from the polishing rate and the uniformity of residual film include mechanical and chemical reactions between several set of slurry and work material.

• Journal of the Korean Society for Precision Engineering
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• v.32 no.7
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• pp.627-631
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• 2015

Conventional etching technology is in the face of problems such as dishing, erosion resulting from non-uniform removal of film. Advanced printed circuit board (PCB) requires accurate wire formation with the aid of planarization by chemical mechanical polishing (CMP). Linear roll CMP is a line contact continuous process which removes the film by pressurization and rotation while slurry is supplied to polishing pad attached to the roll. This paper focuses on the design of floating nozzle on the linear roll CMP equipment which makes the slurry supply uniformly on the roll pad. Experimental results show that removal rate using the floating nozzle increases 3 times higher than that without it and non-uniformity is less than 15%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.113-114
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• 2005

Sufficient removal rate with adequate selectivity to realize the pattern mask of tetra-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained by chemical mechanical polishing (CMP) with commercial silica slurry as a function of pH variation. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.71-76
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• 2022

We evaluated and developed a 6th generation large-size polisher in the type of face-up and Oscar. We removed the hillocks of the low temperature poly-silicon (LTPS) thin film with this polisher. The surface roughness of LTPS was lowered from 7.9 nm to 0.6 nm after CMP(chemical mechanical polishing). The thickness of the LTPS is measured through reflectance in real time during polishing, and the polishing process is completed according to this thickness. The within glass non-uniformity (WIGNU) was 6.2% and the glass-to-glass non-uniformity (GTGNU) was 2.5%, targeting the LTPS thickness of 400Å. In addition, the residual slurry after the CMP process was removed through the Core Flow PVA Brush and alkaline chemical.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2003.11a
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• pp.227-232
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• 2003

Anodizing film was prepared by anodic oxidation of pure aluminum(purity > 99.50) using DC power supply for constant current mode in an electrolytic solution of surface of sulfuric acid. Effects of pre-treatment process such as chemical polishing, acid cleaning, alkali etching before anodic oxidation, were studied to microstructures and surface morphologies. A roughness on surface of anodizing film had to be decreased for amorphous phase by anodic oxidation. A roughness on surface of anodizing film decrease as annealing temperature increased in chemical polishing.