Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.07a
- /
- Pages.113-114
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- 2005
Study on Characteristics of Chemical Mechanical Polishing of BTO Thin Film
BTO 박막의 화학적 기계적 연마 특성 연구
- Ko, Pil-Ju (Chosun Univ.) ;
- Kim, Nam-Hoon (Chosun Univ.) ;
-
Park, Jin-Seong
(Chosun Univ.)
;
- Seo, Yong-Jin (Daebul Univ.) ;
- Lee, Woo-Sun (Chosun Univ.)
- Published : 2005.07.07
Abstract
Sufficient removal rate with adequate selectivity to realize the pattern mask of tetra-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained by chemical mechanical polishing (CMP) with commercial silica slurry as a function of pH variation. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible.