• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.140-143
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• 2003

BST thin films have a good thermal-chemical stability, insulating effect and variety of phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.546-546
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• 2008

Copper (Cu) Chemical mechanical polishing (CMP) has been an essential process for Cu wifing of DRAM and NAND flash memory beyond 45nm. Copper has been employed as ideal material for interconnect and metal line due to the low resistivity and high resistant to electro-migration. Damascene process is currently used in conjunction with CMP in the fabrication of multi-level copper interconnects for advanced logic and memory devices. Cu CMP involves removal of material by the combination of chemical and mechanical action. Chemicals in slurry aid in material removal by modifying the surface film while abrasion between the particles, pad, and the modified film facilitates mechanical removal. In our research, we emphasized on the role of chemical effect of slurry on Cu CMP, especially on the effect of amine functional group on removal rate selectivity between Cu and Tantalum-nitride (TaN) film. We investigated the two different kinds of complexing agent both with amine functional group. On the one hand, Polyacrylamide as a polymer affected the stability of abrasive, viscosity of slurry and the corrosion current of copper film especially at high concentration. At higher concentration, the aggregation of abrasive particles was suppressed by the steric effect of PAM, thus showed higher fraction of small particle distribution. It also showed a fluctuation behavior of the viscosity of slurry at high shear rate due to transformation of polymer chain. Also, because of forming thick passivation layer on the surface of Cu film, the diffusion of oxidant to the Cu surface was inhibited; therefore, the corrosion current with 0.7wt% PAM was smaller than that without PAM. the polishing rate of Cu film slightly increased up to 0.3wt%, then decreased with increasing of PAM concentration. On the contrary, the polishing rate of TaN film was strongly suppressed and saturated with increasing of PAM concentration at 0.3wt%. We also studied the electrostatic interaction between abrasive particle and Cu/TaN film with different PAM concentration. On the other hand, amino-methyl-propanol (AMP) as a single molecule does not affect the stability, rheological and corrosion behavior of the slurry as the polymer PAM. The polishing behavior of TaN film and selectivity with AMP appeared the similar trend to the slurry with PAM. The polishing behavior of Cu film with AMP, however, was quite different with that of PAM. We assume this difference was originated from different compactness of surface passivation layer on the Cu film under the same concentration due to the different molecular weight of PAM and AMP.

• Tribology and Lubricants
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• v.15 no.1
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• pp.90-97
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• 1999

Chemical-Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active, abrasive containing slurry. CU process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves tribology. The liquid slurry is trapped between the wafer (work piece) and pad (tooling) forming a lubricating film. For the first step to understand material removal rate of the CMP process, the lubricational analyses were done with commercial 100mm diameter silicon wafers to get nominal clearance of the slurry film, roll and pitch angle at the steady state. For this purpose, we calculate slurry pressure, resultant forces and moments at the steady state in the range of typical industrial polishing conditions.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.245-246
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• 2010

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.259-260
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• 2009

• Journal of the Semiconductor & Display Technology
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• v.3 no.1
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• pp.15-20
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• 2004

Through shallow trench isolation (STI) chemical mechanical polishing (CMP) tests, we investigated the dependence of pad surface temperature on the abrasive and additive concentrations in ceria slurry under varying pressure using blanket film wafers. The pad surface temperature after CMP increased with the abrasive concentration and decreased with the additive concentration in slurries for the constant down pressure. A possible mechanism is that the additive adsorbed on the film surfaces during polishing decreases the friction coefficient, hence the pad surface temperature gets lower with increasing the additive concentration. This difference in temperature was more remarkable for the higher concentration of abrasives. In addition, in-situ measurement of spindle motor was carried out during oxide and nitride polishing. The averaged motor current for oxide film was higher than that for nitride film, meaning the higher friction coefficient.

• Transactions on Electrical and Electronic Materials
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• v.7 no.4
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• pp.167-172
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• 2006

Submicron colloidal silica coated with ceria were prepared by mixing of silica and nano ceria particles and modified by hydrothermal reaction. The polishing efficiency of the ceria coated silica slurry was tested over oxide film on silicon wafer. By changing the polishing pressure in the range of $140{\sim}420g/cm^2$ with the ceria coated silica slurries in $100{\sim}300nm$, rates, WIWNU and friction force were measured. The removal rate was in the order of 200, 100, and 300 nm size silica coated with ceria. It was known that the smaller particle size gives the higher removal rate with higher contact area in Cu slurry. In the case of oxide film, the indentation volume as well as contact area gives effect on the removal rate depending on the size of abrasives. The indentation volume increase with the size of abrasive particles, which results to higher removal rate. The highest removal rate in 200 nm silica core coated with ceria is discussed as proper combination of indentation and contact area effect.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.10
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• pp.7071-7077
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• 2015

In recently, the demand of cover-glass is increased because smart phone, tablet pc, and electrical device has become widely used. The display of mobile device is enlarged, so it is necessary to have a high strength against the external force such as contact or falling. In fabrication process of cover-glass, a grinding process is very important process to obtain high strength of glass. Conventional grinding process using a grinding wheel is caused such as a scratch, chipping, notch, and micro-crack on a surface. In this paper, polishing system using a abrasive film was developed for a grinding of mobile cover-glass. To evaluate structural stability of the designed system, finite element model of the polishing system is generated, and multi-body dynamic analysis of abrasive film polishing machine is proposed. As a result of the analysis, stress and displacement analysis of abrasive film polishing system are performed, and using laser displacement sensor, structural stability of abrasive film polishing system is confirmed by measuring displacement.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.13 no.1
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• pp.121-128
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• 2014

Superfinishing is essential for mirror surfaces, because among mechanical components cylindrical workpieces such as spindles must maintain precision and reliability with respect to functional characteristics. However, research on standardization of polishing film application combination to obtain mirror surfaces is insufficient. Consequently, this has been a factor in rising costs of mechanical components. Therefore, in this study, experiments have been conducted to determine efficient polishing film application combination for mirror surfaces ranging from ductile materials such as SM45C, brass, aluminium 7075, and titanium to brittle materials such as $Al_20_3$, SiC, $Si_3N_4$, and $ZrO_2$. From the experimental results, efficient polishing film application combination for metallic materials and ceramic materials is confirmed.

• Tribology and Lubricants
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• v.33 no.6
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• pp.282-287
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• 2017

SU-8 is an epoxy-type photoresist widely used for the fabrication of high-aspect-ratio (HAR) micro-structures in micro-electro-mechanical systems (MEMS). To fabricate highly integrated structures, chemical mechanical polishing (CMP) has emerged as the preferred manufacturing process for planarizing the MEMS structure. In SU-8 CMP, an oxidizer decomposes organic impurities and particles in the CMP slurry remove the chemically reacted surface of SU-8. To fabricate HAR microstructures using the CMP process, the adhesion between SU-8 and substrate material is important to avoid the delamination of the SU-8 film caused by the mechanical-dominant material removal characteristic. In this study, the friction force during the CMP process is measured with a CMP monitoring system to detect the delamination phenomenon and investigate the delamination of the SU-8 film from the silicon substrate under various pressure conditions. The increase in applied pressure causes an increase in the frictional force and wafer-edge stress concentration. The frictional force measurement shows that the friction force changes according to the delamination phenomenon of the SU-8 film, and that it is possible to monitor the delamination phenomenon during the SU-8 CMP process. The delamination at a high applied pressure is explained by the effect of stress distribution and pad deformation. Consequently, it is necessary to control the pressure of polishing, which can avoid the delamination in SU-8 CMP.