• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.731-734
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. Polishing pads play a key role in CMP, which has been recognized as a critical step to improve the topography of wafers for semiconductor fabrication. It is investigated the performance of $SiO_2-CMP$ process using commercial silica slurry as a pad conditioning temperature increased after CMP process. This study also showed the change of SEM images in the pore geometry on the CMP pad surface after use with a different pad conditioning temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.12-16
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• 2005

Chemical mechanical polishing (CMP) process is one of the most useful methods for improving the surface roughness of films. The effects of CMP on the surface morphology of WO$_3$ films prepared by RF sputtering system were investigated in this paper. A removal rate of films increased, and the uniformity performance of surface decreased with the addition of an oxidizer to the tungsten slurry. Non-uniformity performance of surface was superior as its value was below 5 % when oxidizers of 5.0 vol% and 2.5 vol%, respectively, were added to the tungsten slurry. The optimized oxidizer concentration, reflected both the improved roughness values and hillock-free surface with the good uniformity performance, was 5.0 vol% as an atomic force microscopy(AFM) analysis of thin film topographies. Our CMP results will be a useful reference for advanced technology of thin films for gas sensor applications in the near future.

• Journal of the Korean institute of surface engineering
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• v.53 no.1
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• pp.29-35
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• 2020

In this study, five different specimen preparation methods were introduced and their advantages and disadvantages were presented. One of them, an epoxy mounting method has advantages of constant exposure area, ease of surface preparation without touching the specimen surface during polishing or cleaning, use of small amount of material and ease of specimen reuse by polishing or etching. However, in order to eliminate unexpected errors resulting from preferable reaction at the specimen/epoxy interface and contact resistance between the specimen and copper conducting line for electrical connection, it is recommended to cover the wall side of the specimen with porous anodic oxide films and to remain the contact resistance lower than 1 ohm. The increased contact resistance between the specimen and Cu conducting line appeared to result in increases of anodizing voltage and solution temperature during anodizing by which thickness and hardness of anodizing film on Al2024 alloy were drastically decreased and color of the films became more brightened.

• The korean journal of orthodontics
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• v.26 no.5 s.58
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• pp.613-622
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• 1996

The purposes of this study were to evaluate and compare the frequency of ceramic bracket fracture, frequency of enamel fracture, bond fracture site, adhesive remnant index after mechanical and electrothermal debracketing, to evaluate effectiveness of high and low speed rotary instrument and ultrasonic instrument during residual adhesive remnants removal, and to measure resin film surface(percentage) using by image analyser(Leco 300). Bond fracture site, bracket fracture, and enamel surface damage were examined by scanning electron microscope. The following results were obained : 1. In the mechanical debracketing group, the bond failed predominantly at enamel-adhesive interface with the bulk of adhesive remaining on bracket base. 2. In the eletrothermal debracketing group, the bond failed predominantly at adhesive-bracket interface with the bulk of adhesive remaining on enamel surface. 3. The most effectiveness of residual resin removal was obtained by means of the resin polishing bur and the order of scratch formation was the procedure using tungsten carbide bur, ultrasonic scaler, sof-lex disc, and polishing bur. 4. The order of the resin film surface percentage was ultrasonic scaler, tungsten carbide bur, sof-lex disc, and resin polishing bur.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.103-104
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• 2006

In this paper. we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interlace. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then. we compared the structural characteristics before and alter CMP process of PZT films. Their dependence on slurry composition was also investigated. We expect that our results will be useful promise of global planarization for ferroelectric random access memories (FRAM) application in the near future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.521-526
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• 2005

Within wafer non-uniformity(WIWNU) improves as the stiffness of pad decrease. We designed the pad groove to study of pad stiffness on WIWNU in Chemical mechanical polishing(CMP) and measured the pad stiffness according to groove width. The groove influences effective pad stiffness although original mechanical properties of pad are unchanged by grooving. Also, it affects the flow of slurry that has an effect on the lubrication regime and polishing results. An Increase of the apparent contact area of pad by groove width results in decrease of effective pad stiffness. WIWNU and profile of removal tate improved as effective pad stiffness decreased. Because grooving the pad reduce its effective stiffness and it makes slurry distribution to be uniform. Futhermore, it ensures that pad conforms to wafer-scale flatness variability. By grooving the top pad, it is possible to reduce its stiffness and hence reduce WIWNU and edge effect.

• Korea-Australia Rheology Journal
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• v.14 no.2
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• pp.63-70
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• 2002

Chemical mechanical planarization (CMP) is the polishing process enabled by both chemical and mechanical actions. CMP is used in the fabrication process of the integrated circuits to achieve adequate planarity necessary for stringent photolithography depth of focus requirements. And recently copper is preferred in the metallization process because of its low resistivity. We have studied the effects of chemical reaction on the polishing rate and surface planarity in copper CMP by means of numerical simulation solving Navier-Stokes equation and copper diffusion equation. We have performed pore-scale simulation and integrated the results over all the pores underneath the wafer surface to calculate the macroscopic material removal rate. The mechanical abrasion effect was not included in our study and we concentrated our focus on the transport phenomena occurring in a single pore. We have observed the effects of several parameters such as concentration of chemical additives, relative velocity of the wafer, slurry film thickness or ash)tract ratio of the pore on the copper removal rate and the surface planarity. We observed that when the chemical reaction was rate-limiting step, the results of simulation matched well with the experimental data.

• Journal of the Korean Society for Precision Engineering
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• v.32 no.1
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• pp.69-74
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• 2015

Cadmium telluride (CdTe) is being developed for thin film of the X-Ray detector recently. But a rough surface of the CdTe should be improved for resolution and signal speed. This paper shows the study on the improvement of surface roughness and removal rate by applying Chemical Mechanical Polishing. The conventional potassium hydroxide (KOH) based colloidal silica slurry could not realize a mirror surface without physical defects, resulting in low material removal rate and many scratches on surface. In order to enhance chemical reaction such as form oxidized layer on the surface of cadmium telluride, we used hydrogen peroxide ($H_2O_2$) as an oxidizer. Consequently, in case of 3 wt% concentration of hydrogen peroxide, the highest MRR (938 nm/min) and the lowest surface roughness ($R_{p-v}=10.69nm$, $R_a=0.8nm$) could be obtained. EDS was also used to confirm the generated oxide of cadmium telluride surface.

• Transactions on Electrical and Electronic Materials
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• v.7 no.4
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• pp.163-166
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• 2006

The dishing and the erosion were evaluated on the tungsten CMP process with conventional and new developed slurry. The tungsten thin film was polished by orbital polishing equipment. Commercial pattern wafer was used for the evaluation. Both slurries were pre tested on the oxide region on the wafer surface and the removal rate was not different very much. At the pattern density examination, the erosion performance was increased at all processing condition due to the reduction of thickness loss in new slurry. However, the dishing thickness was not remarkably changed at high pattern density despite of the improvement at low pattern density. At the large pad area, the reduction of dishing thickness was clearly found at new tungsten slurry.

• Journal of Korean Ophthalmic Optics Society
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• v.19 no.1
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• pp.31-42
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• 2014

Purpose: The present study was conducted to investigate the effect of the physical properties of RGP lens induced by lens polishing on the actual wearer's subjective comfort, the tear film break-up time and the blinking rate as a follow-up study that revealed the relationship between the lens physical properties during lens manufacturing and lens wearer's factors. Methods: RGP lenses made from the three different polishing conditions (25, 50 and 100 seconds) were applied on 28 eyes of 17 subjects, aged 20 to 29 years, without any known disease and surgical history in the eyes. While the subjects were asked to wear the RGP lenses longer than a week, the questionnaire for the comfortability was administered everyday. Subjective and objective tear break-up time and blinking rate of the wearers were further measured. Results: The wearer's subjective comfortability showed some difference in the type of discomfort and satisfaction score according to the polishing status when wearing RGP lenses made from different polishing conditions longer than a week, and a bigger difference in satisfaction score induced by polishing condition was especially shown in experienced RGP lens wearer rather than un-experienced wearer. In the case of RGP lens wearer compared with the ones without the wearing experience, as the wearing time increased subjective and objective tear break-up time were increased and the blinking rate was decreased. However, subjective and objective tear break-up time were tended to decrease with even longer wearing time when wearing the RGP lens made from the polishment for 100 seconds. Conclusions: These results confirmed that the optimization of physical properties of the lens may not give the same effect on the wearer's subjective and objective symptoms and other factors when actual wearing. From the results, it can suggest that the success rate of RGP lens wear may be changed by physiological factors such as the stabilization of wearer's tear film, comfortability and lens wearing experience when wearing RGP lens based on 'The manufacturing standard for soft contact lens/hard contact lens' provided by Korea Food and Drug Administration.