Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Planarization Characteristics of CMP for WO3 Film with an Addition of Oxidizers

산화제 첨가에 따른 WO3 박막의 CMP 평탄화 특성

  • 이우선 (조선대학교 전기공학과) ;
  • 고필주 (조선대학교 전기공학과) ;
  • 김남훈 (조선대학교 에너지자원신기술연구소) ;
  • 서용진 (대불대학교 전기전자공학과)
  • Published : 2005.01.01
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Abstract

Chemical mechanical polishing (CMP) process is one of the most useful methods for improving the surface roughness of films. The effects of CMP on the surface morphology of WO$_3$ films prepared by RF sputtering system were investigated in this paper. A removal rate of films increased, and the uniformity performance of surface decreased with the addition of an oxidizer to the tungsten slurry. Non-uniformity performance of surface was superior as its value was below 5 % when oxidizers of 5.0 vol% and 2.5 vol%, respectively, were added to the tungsten slurry. The optimized oxidizer concentration, reflected both the improved roughness values and hillock-free surface with the good uniformity performance, was 5.0 vol% as an atomic force microscopy(AFM) analysis of thin film topographies. Our CMP results will be a useful reference for advanced technology of thin films for gas sensor applications in the near future.

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References

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