• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.1
• /
• pp.39-46
• /
• 2002

High-senstivity temperature sensor based on the wavelength selectivity of single mode fiber-to-planar waveguide coupler, was demonstrated. The resonant wavelength of the coupler was shifted with large rate of -3.43nm/$^{\circ}C$ owing to good thermo-optic effects of polymer planar waveguide. The device design technique to reduce the polarization dependent properties and increase the temperature sensitivity was presented.

• Proceedings of the Optical Society of Korea Conference
• /
• 2000.02a
• /
• pp.96-97
• /
• 2000

Incoherent broadband optical sources have been applied in various areas such as a light source for optical device characterization, fiber-optic gyroscopes$^{(1)}$ , and spectrum sliced light source in wavelength division multiplexing (WDM) system$^{(2)}$ . To utilize the inherent low loss in silica optical fibers, various types of incoherent light sources are being developed. Among the light sources, the amplified spontaneous emission (ASE) from a rare earth doped fiber has benefits in temperature stability, high output power, low polarization dependence over semiconductor diodes$^{(3)}$ . Recently erbium doped fibers (EDF) have been intensively researched for ASE sources as well as optical amplifiers$^{(4)}$ . The spectrum of ASE from an EDF, however, is limited in the 1520~1560 nm range in conventional configurations. In this letter we described a new broadband ASE source which included both the conventional ASE band of Er$^{3+}$ ion, 1520nm~1560nm and ASE band from Tm$^{3+}$ ions that extends the bandwidth further. For the first time, to the best knowledge of authors, a fiber ASE source based on the energy transfer between Er$^{3+}$ and Tm$^{3+}$ ions in the range of 1460~1550 nm, has been demonstrated using a single 980nm pump laser diode. (omitted)omitted)

• Proceedings of the KIEE Conference
• /
• 2005.11a
• /
• pp.87-89
• /
• 2005

$Bi_{3.25}Y_{0.75}Ti_{3}O_{12}$[BYT] ferroelectric thin films were deposited by RF-Sputtering method on the $Pt/Ti/SiO_2/Si$. We investigated the effects of processing condition (especially post-annealing) on the structural and ferroelectric properties of the BYT thin films. Increasing the annealing temperature, the peak intensity of (117) increased and c-axis orientation decreased. The BYT thin films crystallized well at $600^{\circ}C$ for 30min. No secondary phases observed in the XRD pattern. At annealing temperature of $700^{\circ}C$, the thin films had no cracks and the grain was uniform. The calculated lattice constants of BYT thin films were a=0.539nm, b=0.536nm, c=3.288nm. The remnant polarization of the $Bi_{3.25}Y_{0.75}Ti_{3}O_{12}$ capacitor reached $1.8uC/cm^2$ at an applied field about 400kV/cm. The BYT thin films can be used as capacitors in Ferroelectric Random Access Memory device.

• Journal of the Korean Geophysical Society
• /
• v.2 no.3
• /
• pp.225-233
• /
• 1999

Electrical resistivity of a rock-sample is dependant on not only formation factor of rock itself but also many parameters such as fluid type, measuring device, temperature, water saturation, electrical contact between electrode and core section, induced polarization, and frequency of electric source. In this study, we attempt to verify various affecting factors in core resistivity measurements and to find a better environment for core resistivity measurement. Particularly great attention has been paid to understanding the effects of temperature, water saturation, contact condition between sample and electrodes, and frequency of electric source. Precise measurement of resistivity can be achieved by utilizing silver paste for better contacts, taping samples for constant moisture contents, and using time-series resistivity data.

• Korean Journal of Optics and Photonics
• /
• v.14 no.2
• /
• pp.169-174
• /
• 2003

We report theoretical and experimental investigation of a polarizer made of single mode side-polished fiber covered with a metal film. The influence of the metal film thickness and the refractive index of overlay on the device performance has been analyzed in terms of the normal mode theory. Based on the theoretical prediction, a polarizer with 40 ㏈ of polarization extinction ratio and 0.5 ㏈ insertion loss at optical communication wavelength has been realized.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.29 no.2
• /
• pp.77-82
• /
• 2018

Electromagnetic wave transmission through periodic metal-insulator-metal(MIM) waveguides as a function of plate thickness has not been extensively studied at various terahertz frequencies. In this paper, we investigate the transmittances through gold MIM slits when a normally incident wave with parallel polarization is considered at several terahertz frequencies. In addition, the results are compared to the case of a perfect electric conductor, and the differences are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05c
• /
• pp.49-52
• /
• 2003

The role of gas ratio with the crystallization behavior and electrical properties in $Bi_{3.25}La_{0.75}Ti_3O_{12}$(BLT) thin films by rf magnetron sputtering method has not been precisely defined. In this work, the ferroelectric properties of these films with gas variation was investigated. BLT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all BLT films indicated perovskite polycrystalline structure with preferred orientation (020) and (0012). And no pyrochlore phase was observed. The fabricated film annealed with $O_2$ of 15 sccm showed that value of leakage current was $9.67{\times}10^{-7}A/cm^2$ at 50kV /em, and the value of remanent polarization (2Pr=Pr+-Pr-) was $11.8{\mu}C/cm^2$. Therefore we induce access to memory device application by rf-magnetron sputtering method in this report.

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.2022-2024
• /
• 2005

Electrical double-layer capacitor (EDLC) is an electrochemical energy storage device in which electric charges only accumulated by a pure electrostatic attraction force are stored on the electrolyte-electrode interface in a form of double layer and separated by the electrolyte. The composite was prepared by mixing nanosize $TiO_2$ and activated carbon through a means of ultrasonic vibration in ethanol solution for 30 min in various mass ratios of $AC:TiO_2$ to form activated carbone-semiconducting oxide composites. Either 1.0 M $LiClO_4/EC-DEC$ or $Et_4NBF_4$/EC-DEC was used as the electrolyte. It was found that with modification of $TiO_2$, the specific capacitance of activated carbon measured at $1mA/cm^2$ was increased from 40 to 50 F/g. This method is unique in comparison the conventional method because it uses semiconducting TiO2 other than electrochemically active materials such as $RuO_2$. The increase in specific capacitance could be attributed to the decrease in electric polarization, caused by the introduction of $RuO_2$.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.67 no.6
• /
• pp.799-803
• /
• 2018

We demonstrated memory thin-film transistors (MTFTs) with organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) and an amorphous oxide semiconducting indium gallium zinc oxide channel on the elastomeric substrate. The dielectric constant for the P(VDF-TrFE) thin film prepared on the elastomeric substrate was calculated to be 10 at a high frequency of 1 MHz. The voltage-dependent capacitance variations showed typical butterfly-shaped hysteresis behaviors owing to the polarization reversal in the film. The carrier mobility and memory on/off ratio of the MTFTs showed $15cm^2V^{-1}s^{-1}$ and $10^6$, respectively. This result indicates that the P(VDF-TrFE) film prepared on the elastomeric substrate exhibits ferroelectric natures. The fabricated MTFTs exhibited sufficiently encouraging device characteristics even on the elastomeric substrate to realize mechanically stretchable nonvolatile memory devices.

• Korean Journal of Optics and Photonics
• /
• v.3 no.3
• /
• pp.198-202
• /
• 1992

Silver ion-exchanged glass waveguide with its large surface index difference and shallow depth is suitable to be used for the hybrid integration of semiconductor device and glass waveguide using the semiconductor film grafting technique. We report characteristics of the planar and channel glass waveguides exchanged in the diluted silver nitrate melt in the visible and infrared spectral region. Especially, we determined the fabrication parameters for single-mode channel waveguide at 1.5.$\mu$m, an important wavelength in the optical communication. Directional couplers with several different configurations were fabricated, and their 3 dB coupling length was determined as a function of wavelenGh and polarization.