• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1991년도 한국자동제어학술회의논문집(국제학술편); KOEX, Seoul; 22-24 Oct. 1991
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• pp.1956-1960
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• 1991

This paper describes the measured results upon monochromatic light, compound light, and light emanated from light emitting diodes by a simplified wavemeter with a semiconductor color sensor. Since a single unit element of a semiconductor color sensor with two PN junction photodiodes has been developed, the author has fabricated the simplified wave detector by using the element. The simplified wive detector has been measured results upon monochromatic light, compound light, and light emanated from light emitting diodes. Since luminescent color of each diode locates in luminosity region, comparison of measured values of PD-150 and PD-151 resulted no remarkable difference in averaged wave length. As for monochromatic light, PD-151 showed very cross value to the color filter peak value rather than PD-150. As for compound light, PD-150 has shown such influence of long wave length light which reaches to near infrared ray with respect to PD-151.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 하계학술대회 논문집
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• pp.187-190
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• 1991

The analytical model to investigate the effects of the drift and diffusion carrier transport upon the Hall effect is presented and applied to the general PN junction structure. The diffusion current effect on the Hall coefficient can not be considered in the conventional model, which produces the conversion of the direction of the induced Hall field between measured and calculated values. The proposed analytical model which considers the diffusion current effect provides the coincident results with the previous experimental results.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.2003.1-2004
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• 2011

LED는 친환경 광원으로써 메탈램프에 비해 높은 광 변환 효율과 긴 수명을 갖고 있어 차세대 광원으로 널리 쓰이고 있다. 그러나 이러한 특성은 LED의 접합온도가 일정하게 유지 되어야 가능하다. 실제 LED는 PN접합으로 구성되어 접합온도가 상승될 경우 광 변환 효율의 저하, 색온도의 변화, 사용 수명의 감축을 야기 시키는 요소로 작용한다. 따라서 LED는 방열설계가 중요하며 방열설계가 제대로 되지 못한 경우에 대해서는 온도보상이 필요하다. 본 논문은 LED모듈에 접합온도를 LED업체에서 제공하는 그래프를 이용하여 간접적으로 추정하고 LED의 접합온도를 일정하게 유지 시키는 시스템을 제안하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.934_935
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• 2009

LED는 기존조명에 비해 친환경적이고, 긴 수명을 갖기 때문에 현재에 이르러 광고조명이나 백라이트 유닛 그리고 실내 외 조명으로 각광받기 시작했다. LED를 조명으로 사용 함에 있어서 LED의 PN 접합부에서 발생하는 접합온도 상승을 고려해야한다. 접합온도 상승은 LED의 광 출력과 수명의 감소, 광색의 변화를 초래하기 때문에 광 출력 및 광색을 유지시키고, 수명을 예측하기 위해서는 LED의 접합온도를 일정하게 유지시키는 LED 전용의 전력제어 시스템이 필요하다. 본 논문은 LED 접합온도 측정 시스템과 구동전원을 설계 및 제작하였으며, 측정된 온도를 구동전원에 궤환시켜 접합온도를 일정하게 유지시키는 시스템을 제안하였다.

• 전자공학회논문지A
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• 제29A권10호
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• pp.29-34
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• 1992

JFET's with gate lengths ranging from 1$\mu$m to 8.3$\mu$m are successfully fabricated on InP substrate where the long haul (1.3$\mu$m~8.3$\mu$m) OEIC's(OptoElectronic Integrated Circuits) have been made. The pn junction of InP JFET's is made by co-implantation and RTA process. JFET's have etched-mesa-gate structure and the maximum gm larger than 90mS/mm was measured and this is the highest record in JFET's of such structure without S/D n$^{+}$ ion implantation. To maintain maximum g$_m$ should be well controlled the overetch of n-layer which inevitably occurs during etching off the unused p-layer. The I-V characteristic is checked during p-layer etch, for this purpose. A dc voltage gain of 11 is obtained from a preamplifier circuit thus fabricated.

• 전기학회논문지
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• 제61권3호
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• pp.422-426
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• 2012

Transient radiation is emitted during a nuclear explosion. Transient radiation causes a fatal error in the CMOS circuit as a Upset and Latch-up. In this paper, transient radiation NMOS, PMOS, INVERTER SPICE model was proposed on the basisi of transient radiation effects analysis using TCAD(Technology Computer Aided Design). Photocurrent generated from the MOSFET internal PN junction was expressed to the current source and Latch-up phenomenon in the INVERTER was expressed to parasitic thyristor for the transient radiation SPICE model. For example, the proposed transient radiation SPICE model was applied to CMOS NAND circuit. SPICE simulated characteristics were similar to the TCAD simulation results. Simulation time was reduced to 120 times compared to TCAD simulation.

• 전자통신동향분석
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• 제32권6호
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• pp.40-47
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• 2017

One of the main technical constraints of a conventional battery is the limited lifetime of electric energy supplied. With self-power generation using an internal radioisotope as an emitter of beta particles, and a PN-junction semiconductor as an absorber of the beta particles, a betavoltaic battery can provide electric energy to electric devices in a semi-permanent manner. Hence, a betavoltaic battery can be adopted as the solution to the power source issue of IoT devices placed in locations that people cannot easily access, such as in the deep sea, a desert, and space, and requiring a long operation time without an electrical charging. This paper covers the current trends in betavoltaic batteries including issues regarding their technology, application, and patents.

• 대한전자공학회논문지
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• 제27권7호
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• pp.1042-1048
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• 1990

The approximations of charge relationships at normally doped semiconductor interfaces were qualitatively derived basis on electrical neutrality conditions. Effects of ion adsorptions, activation processes, interfacial structures, rectifying phenomena, and effects of surface potential barriers at the p- and n-Si/CsNO3 aqueous electrolytes, and the p-Si/(1HF:3HNO3:6H2O) electrolyte solutions were investigated using a cyclic voltammetric method. The space charge acts the most important role for the pn junction structures, the rectifying phenomena, and the activation processes. The Current-Voltage (I-V) characteristics curves significantly depend on developing of the Helmholtz double layers and charging of the show surface states during the activation processes. A linear Current-Voltage characteristics region was observed at the p-Si/(1HF:3HNO3: 6H2O) electrolyte solution interface.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권7호
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• pp.358-363
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• 2004

A new 600 V dual gate transistor employing thyristor action, which incorporates floating PN junction and trench gate IGBT, is proposed to improve the forward current-voltage characteristics and the short circuit ruggedness. Our two-dimensional numerical simulation shows that the proposed device exhibits low forward voltage drop and eliminates the snapback phenomena compared with conventional trench gate IGBT and EST The proposed device achieves high current saturation characteristics by separating floating N+ emitter and cathode. The proposed device achieves low saturation current value compared with conventional devices, and the short-circuit ruggedness is improved. The proposed device may be suitable for the use of high voltage switching applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.208-212
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• 2003

Silicon transient voltage suppressors (TVSs) are clamping devices that limit voltage spikes by low impedance avalanche breakdown of a rugged silicon PN junction. They are used to protect sensitive components from electrical overstress such as that caused by induces lightning, inductive load switching and electrostatic discharge. In this paper, we present static and dynamic characteristics of TVS diode using thermal analysis simulation software. And also, it is presented that the thermal dissipation characteristics of TVS diode in the transient state.