• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.867-869
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• 1999

In this study, $SrBi_{2}Ta_{2}O_{9}$(SBT) thin films were etched as a function of $SF_6$/Ar gas mixing ratio in magnetically enhanced inductively coupled plasma(MEICP) system fer a fixed rf power, dc-bias voltage, and chamber pressure. The etch rate of SBT thin film was $1500{\AA}/min$ and the selectivities of photoresist (PR) and $SiO_2$ to SBT thin film were 0.48 and 0.62, respectively when the samples were etched at a rf power of 600W, a dc-bias voltage of -150V, a chamber pressure of 10 mTorr and a gas mixing ratio of $SF_6/(SF_6+A)$=0.1. In order to examine the chemical reactions on the etched surface, X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry(SIMS) were done.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.114-120
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• 2010

Conventional surface texturing in crystalline silicon solar cell have been use wet texturing by Alkali or Acid solution. But conventional wet texturing has the serious issue of wafer breakage by large consumption of wafer in wet solution and can not obtain the reflectance below 10% in multi crystalline silicon. Therefore it is focusing on RIE texturing, one method of dry etching. We developed large scale plasma RIE (Reactive Ion Etching) equipment which can accommodate 144 wafers (125 mm) in tray in order to provide surface texturing on the silicon wafer surface. Reflectance was controllable from 3% to 20% in crystalline silicon depending on the texture shape and height. We have achieved excellent reflectance below 4% on the weighted average (300~1,100 nm) in multi crystalline silicon using plasma texturing with gas mixture ratio such as $SF_6$, $Cl_2$, and $O_2$. The texture shape and height on the silicon wafer surface have an effect on gas chemistry, etching time, RF frequency, and so on. Excellent conversion efficiency of 16.1% is obtained in multi crystalline silicon by RIE process. In order to know the influence of RF frequency with 2 MHz and 13.56 MHz, texturing shape and conversion efficiency are compared and discussed mutually using RIE technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.163.2-163.2
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• 2010

We developed a simple method to synthesis a nitrogen doped graphene, nitrogen plasma treated graphene (NPG) sheets thought nitrogen plasma etching of graphene oxide (GO). X-ray photo electron spectroscopy (XPS) study of NPG sheets treated at various plasma conditions reveal that N-doping is classified to 3 kinds of binding configurations. The nitrogen doping concentration is at least 1.5 at % and up to 3 at% with changing of ratio of nitrogen configuration in NPG. Our group demonstrate ultracapacitor with high capacity and extremely durable using a NPG sheets that are comparable to pristine graphene supercapacitor, and pseudocapacitor using polymer and metal oxide with redox reaction, capacitance that are three-times higher, and a cycle life that are extremely stable. We also realized flexible capacitor by using the paper electrode that are coated by NPG sheets. NPG paper capacitor presented almost same performance compare with NPG on a metal substrate, and durability is much more enhanced than that. To additionally explain that how different kind of atoms in graphene layers can act as the ion absorption sites, we simulated the binding energy between nitrogen in graphene layer and ions in electrolyte. Increasing the energy density and long cycle life of ultracapacitor will enable them to compete with batteries and conventional capacitors in number of applications.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.45-48
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• 2000

High dielectric (Ba,Sr)TiO$_3$thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$increases in C1$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystallinity of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.490-495
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• 1999

In 0.18 $\mu \textrm m$ LOGIC device, the etch rate of NMOS polysilicons is different from that of PMOS polysilicons due to the state of polysilicon to manufacture gate line. To control the etch profile, we tested the ratio of $Cl_2$/HBr gas and the total chamber pressure, and also we reduced Back He pressure to get the vertical profile. In the case of manufacturing the gate photoresist line, we used Bottom Anti-Reflective Coating (BARC) to protect refrection of light. As a result we found that $CF_4O_2$ gas is good to etch BARC, because of high selectivity and good photoresist line profile after etching BARC. in the results of the characterization of plasma damage to the antenna effect of gate oxide, NO type thin film(growing gate oxide in 0, ambient followed by an NO anneal) is better than wet type thin film(growing gate oxide in $0_2+H_2$ ambient).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.45-48
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• 2000

High dielectric (Ba,Sr)TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$ increases in Cl$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystalliility of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$ only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.8-11
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• 2001

In this study. the recovery of plasma induced damage in the etched PZT thin film with $O_2$ re-annealing have been investigated. The PZT thin films were etched as a function of $Cl_2/Ar$ and additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etch rates of PZT thin films were $1600\dot{A}/min$ at $Cl_{2}(80%)/Ar(20)%$ gas mixing ratio and $1970\dot{A}/min$ at 30 % additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etched profile of PZT films was obtained above 70 by SEM. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From XPS analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of TixOy is recovered by $O_2$ recombination during rapid thermal annealing process. From AFM images, it shows that the surface roughness of re-annealed sample after etching is improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.701-709
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• 2011

In semiconductor wafer fabrication, etching is one of the most critical processes, by which a material layer is selectively removed. Because of difficulty to correct a mistake caused by over etching, it is critical that etch should be performed correctly. This paper proposes a new approach for etch endpoint detection of small open area wafers. The traditional endpoint detection technique uses a few manually selected wavelengths, which are adequate for large open areas. As the integrated circuit devices continue to shrink in geometry and increase in device density, detecting the endpoint for small open areas presents a serious challenge to process engineers. In this work, a high-resolution optical emission spectroscopy (OES) sensor is used to provide the necessary sensitivity for detecting subtle endpoint signal. Partial Least Squares (PLS) method is used to analyze the OES data which reduces dimension of the data and increases gap between classes. Support Vector Machine (SVM) is employed to detect endpoint using the data after PLS. SVM classifies normal etching state and after endpoint state. Two data sets from OES are used in training PLS and SVM. The other data sets are used to test the performance of the model. The results show that the trained PLS and SVM hybrid algorithm model detects endpoint accurately.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.103-107
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• 2003

The inductively coupled plasma(ICP) etching process was selected to fabricate RF Surface Acoustic Wave(SAW) filters and a Pt thin film was sputtered on a $LiTaO_3$ substrate applied to electrode materials to reduce the spurious response and improve the power durability. Steep sidewall pattern was achieved employing $C_4F_8/Ar/Cl_2$ gas chemistry. We investigated an etching mechanism and parameter dependence of the Pt thin film about $C_4F_8$ addition. Sidewall etch angle was about $80^{\circ}$ at the $C_4F_8$ 20% mixing ratio. Fabricated SAW filter is consists of some series and parallel arm SAW resonators which work as impedance elements and show capacitance characteristics at out of the passband. It can be modified for $800{\sim}900\;MHz$ RF filters. External matching circuits were unnecessary.