• Transactions on Electrical and Electronic Materials
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• 제18권2호
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• pp.74-77
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• 2017

In this work, we investigated the etching characteristics of TaNO thin films and the selectivity of TaNO to $SiO_2$ in an $O_2$/CF4/Ar inductively coupled plasma (ICP) system. The maximum etch rate of TaNO thin film was 297.1 nm/min at a gas mixing ratio of O2/CF4/Ar (6:16:4 sccm). At the same time, the etch rate was measured as a function of the etching parameters, such as the RF power, DC-bias voltage, and process pressure. X-ray photoelectron spectroscopy analysis showed the efficient destruction of the oxide bonds by the ion bombardment, as well as the accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CF_4$-containing plasmas.

• Transactions on Electrical and Electronic Materials
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• 제13권1호
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• pp.6-9
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• 2012

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$) of ZnO thin films in $N_2/Cl_2$/Ar inductivity coupled plasma. A maximum etch rate and selectivity of 108.8 nm/min and, 3.21, respectively, was obtained for ZnO thin film at a $N_2/Cl_2$/Ar gas mixing ratio of 15:16:4 sccm. The plasmas were characterized by optical emission spectroscopy. The x-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment. An accumulation of low volatile reaction products on the etched surface was also shown. Based on this data, an ion-assisted chemical reaction is proposed as the main etch mechanism for plasmas containing $Cl_2$.

• ETRI Journal
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• 제30권3호
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• pp.383-393
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• 2008

The etching mechanism of $ZrO_2$ thin films and etch selectivity over some materials in both $BCl_3$/Ar and $BCl_3/CHF_3$/Ar plasmas are investigated using a combination of experimental and modeling methods. To obtain the data on plasma composition and fluxes of active species, global (0-dimensional) plasma models are developed with Langmuir probe diagnostics data. In $BCl_3$/Ar plasma, changes in gas mixing ratio result in non-linear changes of both densities and fluxes for Cl, $BCl_2$, and ${BCl_2}^+$. In this work, it is shown that the non-monotonic behavior of the $ZrO_2$ etch rate as a function of the $BCl_3$/Ar mixing ratio could be related to the ion-assisted etch mechanism and the ion-flux-limited etch regime. The addition of up to 33% $CHF_3$ to the $BCl_3$-rich $BCl_3$Ar plasma does not influence the $ZrO_2$ etch rate, but it non-monotonically changes the etch rates of both Si and $SiO_2$. The last effect can probably be associated with the corresponding behavior of the F atom density.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.31-36
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• 2003

We investigated dry etching of GaAs and AlGaAs in a high density planar inductively coupled plasma system with $BCl_3$ and $BCl_3/Ar$ gas chemistry. A detailed process study as a function of ICP source power, RIE chuck power and $BCl_3/Ar$ mixing ratio was performed. At this time, chamber pressure was fixed at 7.5 mTorr. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RE chuck power. It was also found that etch rate of GaAs in $BCl_3$ gas with 25% Ar addition was superior to that of GaAs in a pure $BCl_3$ (20 sccm $BCl_3$) plasma. The result was same with AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AIGaAs features etched at 20 sccm $BCl_3$ and $15BCl_3/5Ar$ with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.16-19
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• 2002

(Ba,Sr)TiO3(BST) thin film is an attractive material for the application in high-density dynamic random access memories (DRAMs) because of the high relative dielectric constant and small variation in dielectric properties with frequency. In this study, (Ba0.6,Sr0.4)TiO3 thin films on Pt/Ti/SiO2/Si substrates were deposited by a sol-gel method and the CF4/Ar inductively coupled plasma (ICP) etching behavior of BST thin films had been investigatedby varying the process parameters such as chamber pressure, ICP power, and substrate bias voltage. To analysis the composition of surface residue following etching BST films etched with different Ar/CF4 gas mixing ratio were investigated using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS).

• Transactions on Electrical and Electronic Materials
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• 제14권1호
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• pp.12-15
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• 2013

In this study, we carried out an investigation of the etching characteristics (etch rate, and selectivity to $SiO_2$) of $ZrO_2$ thin films in a $CF_4$/Ar inductively coupled plasma (ICP) system. The maximum etch rate of 60.8 nm/min for $ZrO_2$ thin films was obtained at a 20 % $CF_4/(CF_4+Ar)$ gas mixing ratio. At the same time, the etch rate was measured as a function of the etching parameter, namely ICP chamber pressure. X-ray photoelectron spectroscopy (XPS) analysis showed efficient destruction of the oxide bonds by the ion bombardment, as well as an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch characteristics for the $CF_4$-containing plasmas.

• 전기학회논문지
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• 제56권3호
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• pp.566-570
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• 2007

The specific electrical, optical and acoustic properties of Zinc Oxide (ZnO) are important for semiconductor process which has many various applications. Piezoelectric ZnO films has been widely used for such as transducers, bulk and surface acoustic-wave resonators, and acousto-optic devices. In this study, we investigated etch characteristics of ZnO thin films in inductively coupled plasma etch system with $BCl_3/Ar$ gas mixture. The etching characteristics of ZnO thin films were investigated in terms of etch rates and selectivities to $SiO_2$ as a function of $BCl_3/Ar$ gas mixing ratio, RF power, DC bias voltage and process pressure. The maximum ZnO etch rate of 172 nm/min was obtained for $BCl_3$ (80%)/Ar(20%) gas mixture. The chemical states on the etched surface were investigated with X-ray photoelectron spectroscopy (XPS).

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.276-279
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• 2011

This work, the etching characteristics of $Ba_2Ti_9O_{20}$(BTO) thin films were investigated using an inductively coupled plasma (ICP) of $Ar/Cl_2$ gas mixture. The etch rate of BTO thin films as well as the $BTO/SiO_2$ and BTO/PR etch selectivity were measured as functions of $Ar/Cl_2$ mixing ratio (0~100% Ar) at a constants gas pressure (6 mTorr), total gas flow rate (50 sccm), input power (700 W) and bias power (200 W). The etch rate of BTO thin films decreased with increasing Ar fraction. To analyze the etching mechanism an optical emission spectroscopy (OES), double Langmuir probe(DLP) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out.

• 한국전기전자재료학회논문지
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• 제13권3호
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• pp.183-187
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• 2000

In this study the SrBi$_2$Ta$_2$$O_{9}$ (SBT) thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$plasma as function of CHF$_3$/(Ar+CHF$_3$)gas mixing ratio. Maximum etch rate of SBT thin films was 1650 $\AA$/min and the selectivities of SBT to Pt and photoresist(PR) were 1.35 and 0.94 respectively under CHF$_3$/(Ar+CHF$_3$) of 0.1 For study on etching mechanism of SBT thin film X-ray photoelectron spectroscopy (XPS) surface analyses and secondary ion mass spectrometry (SIMS) mass analysis of etched SBT surfaces were performed. Among the elements of SBT thin film. M(Sr, Bi, Ta)-O bonds are broken by Ar ion bombardment and form SrF and TaF$_2$by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardment. Scanning electron microscopy(SEM) was used for the profile examination of etched SBT film and the cross-sectional SEM profile of etched SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85$^{\circ}$X>.

• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.445-448
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• 2011

In this study, the etching characteristics of $Al_2O_3$ thin films were investigated using an ICP (inductively coupled plasma) of $BCl_3$/Ar gas mixture. The etch rate of $Al_2O_3$ thin films as well as the $SiO_2/Al_2O_3$ etch selectivity were measured as functions of $BCl_3$/Ar mixing ratio (0~100% Ar) at a constant gas pressure (10 mTorr), total gas flow rate (40 sccm), input power (800 W) and bias power (100 W). The behavior of the $Al_2O_3$ etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. To analyze the etching mechanism using DLP (double langmuir probe), OES (optical emission spectroscopy) and surface analysis using XPS (x-ray photoelectron spectroscopy) were carried out.