• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.29-34
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• 2003

Ferroelectric YMnO$_3$ thin films were etched with Ar/C1$_2$ and CF$_4$/C1$_2$ Plasma. The maximum etch rate of YMnO$_3$ thin film was 300 $\AA$/min at a Cl$_2$/Ar gas mixing ratio of 8/2, an RF power of 800 W, a do bias of-200 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. From the X-ray photoelectron spectroscopy (XPS) analysis, yttrium was not only etched by chemical reactions with Cl atoms, but also assisted by Ar ion bombardments in Ar/C1$_2$ plasma. In CF$_4$/C1$_2$ plasma, yttrium formed nonvolatile YF$_{x}$ compounds and remained on and the etched surface of YMnO$_3$. Manganese etched effectively by forming volatile MnCl$_{x}$ and MnF$_{y}$. From the X-ray diffraction (XRD) analysis, the (0004) diffraction peak intensity of the YMnO$_3$ thin film etched in Ar/Cl$_2$ plasma shows lower than that in CF$_4$/Cl$_2$ plasma. It indicates that the crystallinty of the YMnO$_3$ thin film is more easily damaged by the Af ion bombardment than the changes of stoichiometry due to nonvolatile etch by-products.cts.s.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.1
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• pp.97-97
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• 2012

Hinode/XRT has observed coronal mass ejections (CMEs) since it launched on Sep. 2006. Observing programs of Hinode/XRT, called 'CME watch', perform several binned observations to obtain large FOV observations with long exposure time that allows the detection of faint CME plasmas in high temperatures. Using those observations, we determine the upper limit to the mass of hot CME plasma using emission measure by assuming the observed plasma structure. In some events, an associated prominence eruption and CME plasma were observed in EUV observations as absorption or emission features. The absorption feature provides the lower limit to the cold mass while the emission feature provides the upper limit to the mass of observed CME plasma in X-ray and EUV passbands. In addition, some events were observed by coronagraph observations (SOHO/LASCO, STEREO/COR1) that allow the determination of total CME mass. However, some events were not observed by the coronagraphs possibly because of low density of the CME plasma. We present the mass constraints of CME plasma and associated prominence as determined by emission and absorption in EUV and X-ray passbands, then compare this mass to the total CME mass as derived from coronagraphs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.363-366
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• 2000

In this study, SrBi$_2$Ta$_2$$O_{9}$ (SBT) thin films were etched at different Cl$_2$gas mixing ratio in Cl$_2$/Ar. The maximum etch rate of SBT was 883 $\AA$/min in Cl$_2$(20%)/Ar(80%). The result indicates that physical sputtering of charged particles is dominant to chemical reaction in etching SBT thin films. To evaluate the changes of morphology and crystallinity on the near surface of etched SBT, atomic force microscopy (AFM) and x-ray diffraction (XRD) were used. The rms values of etched samples in Ar only or Cl$_2$ only plasma were higher than that of as-deposited, Cl$_2$/Ar Plasma. The SBT (105) crystalinity of the etched samples decreased in Af only or Cla only plasma, but maintain constant in ClyAr plasma. This can be illustrated by a decrease of Bi content or nonvolatile etching products (Sr-Cl and Ta-Cl), resulting in the changes of stoichiometry on the etched surface of the SBT thin films. The decrease of Bi content and nonvolatile etch products were revealed by x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS).).

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.346-350
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• 2015

In this study, we carried out an investigation of the etch characteristics of TiO₂ thin films and the selectivity of TiO₂ to SiO₂ in adaptive coupled C1₂/Ar plasma. The maximum etch rate of the TiO₂ thin film was 136±5 nm/min at a gas mixing ratio of C1₂/Ar (75%:25%). The X-ray photoelectron spectroscopy (XPS) analysis showed the efficient destruction of oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface.

• Journal of Powder Materials
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• v.11 no.4
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• pp.328-332
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• 2004

Fe nanopowders were successfully synthesized by plasma arc discharge (PAD) process using Fe rod. The influence of chamber pressure on the microstructure was investigated by means of X-ray Diffraction (XRD), Field Emission Scanning Electron Microscope (FE-SEM), Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). The prepared particles had nearly spherical shapes and consisted of metallic cores (a-Fe) and oxide shells (Fe$_{3}$O$_{4}$), The powder size increased with increasing chamber pressure due to the higher dissolution and ejection rate of H$_2$ and gas density in the molten metal.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.1-5
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• 2000

Diamond films have been achieved on Si(100) substrates using helicon plasma chemical vapor deposition(HPCVD), Gas mixtures with methane and hydrogen have been used. The growth characteristics were investigated by means of X-ray photoelectroton spectroscopy, Atomic force microscopy and X-ray diffraction. We obtained a plasma density as high as 10$\^$10/~10$\^$11/ cm$\^$-3/ by helicon source. The smooth(100) faces of submicron diamond crystallites were found to exhibit pyramidal shaped architecture, The XPS spectrum for the nucleation layer indicates the presence of diamond at 285.4 eV, close to the reported value of 285.5 eV for diamond , XRD results demonstrates the existence of polycrystalline diamond as the diamond (111) and (220) peaks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.208-211
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.457-457
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• 2012

We presented plasma processing using a DC Arc Plasmatron for diamond deposition on Al2O3 ceramic substrates. Plasma surface treatments were conducted to improve deposition condition before processing for diamond deposition. The Al2O3 ceramic substrates deposited, $5{\times}15mm^2$, were investigated by Scanning Electron Microscopy (SEM), Fourier Transform Infrared Spectroscopy (FTIR) and X-ray Diffraction (XRD). Properties of diamond (111), (220) and (311) peaks were shown in XRD. We identified nanocrystalline diamond films on substrates. The results showed that deposition rate was approximately $2.2{\mu}m/h$ after plasma surface treatments. Comparing the above result with a common processing, deposition rate was improved. Also, the surface condition was improved more than a common processing for diamond deposition on Al2O3 ceramic substrates.

• Journal of the Korean institute of surface engineering
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• v.53 no.2
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• pp.53-58
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• 2020

In this study, we developed plasma electrolytic oxidation (PEO) process for aluminum 7075 alloy to improve the corrosion and mechanical properties. The electrolyte consists of potassium hydroxide and sodium silicate. Additionally, sodium stannate was added into the electrolyte to investigate its effect on PEO film formation. Titanium was used as the counter electrode. Plasma generation voltage reduced from 300V to 150 V by adding 4 g/L of sodium stannate. The thin oxide films were observed by SEM(Scanning Electron Microscopy)/EDS (Energy Dispersive Spectroscopy) for quantitative and qualitative analyses. XRD (X-ray diffraction) and XRF (X-ray Fluorescences) analyses were also carried out to identify oxide layer on aluminum 7075 surface. Vicker's hardness test was performed on the PEO-treated aluminum 7075 surface.

• Journal of the Korean Ceramic Society
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• v.30 no.12
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• pp.1059-1065
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• 1993

The sliding wear behavior of the plasma sprayed zirconia containing 8wt% yttria was investigated over a range of room temperature to 800℃. Both of the friction coefficient and the wear loss increased reaching its maximum at about to 499℃. and then decreased again with increasing temperature up to 800℃. The worn surface at elevated temperature were observed and analyzed by scanning electron microscopy and X-ray diffractometer to study the mechanisms of high temperature wear behavior. Surface morphology of the worn samples changes with temperature. Monoclinic (m)/tetragonal (t) x-ray peak intensity ratio of wear debris and worn surface decreased with increasing temperature. Non-transformable tetragonal (t') to metastable tetragonal (t) phase transformation of worn surface increased with increasing temperature. The results indicate that dehumidification and above phase changes are contributing to the high temperature wear behavior of the plasma sprayed ZrO2-Y2O3 coatings.