• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.208-208
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• 1999

It is found that with increasing power, the measured electron energy distribution by Langmuir probe evolves into a Druyvesteyn-like electron energy distribution in the low-pressure regime of 1mTorr in a small inductively coupled plasma. Electron bounce resonance is introduced to explain the transition of the electron energy distribution against the rf power, The energy diffusion coefficients which determine the shape of the electron energy distribution in elastic range are calculated with and without electron bounce resonance. This electron energy distribution transition is well explained by the electron bounce resonance.

• 마이크로전자및패키징학회지
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• 제7권3호
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• pp.13-17
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• 2000

ECR (Electron Cyclotron Resonance) 식각 공정에 따른 층간 절연막 폴리이미드의 전기적 특성에 관하여 연구하였다. 알루미늄 식각시 일반적으로 사용되는 $Cl_2$플라즈마는 폴리이미드의 유전상수 값을 증가시킨 반면에 $SF_{6}$플라즈마의 경우는 높은 식각률과 유전상수 값의 감소를 가져왔다. 폴리이미드의 누설 전류는 ECR 식각 공정 후에 감소되었다. 다중 금속화 구조를 구현하는데 있어 $Cl_2$플라즈마를 사용하여 알루미늄을 식각하고 $SF_{6}$ 플라즈마를 사용하여 폴리이미드를 식각하는 것이 최적일 것으로 판단된다.

• 대한전기학회논문지
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• 제33권5호
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• pp.173-180
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• 1984

The spectra of scattering light fromlaser-produced plasma near its fundamental and second harmonic wavelength were observed respectively by means of spectroscopic technique. The experimental results and the generation mechanism of nonlinear effects such as the second garmonics and the brillouin scattering were analysed theoretically. The spectra of reflected laser light became wider than that of incident laser light. And the peak of spectrum of reflected light shifted to red-side from that of incident light. The second harmonic light is generated from the nonlinear interaction of the incident laser light and the electron plasma wave excited in resonance region by the oblique incidence of laser light to the plasma. The Brillouin backscattering from laser-produced plasmas of hydrogen and deuterium has shown an isotope effect in the red-side region of the generated second harmonic light. This isotope shift is explained by the parametric instability at the cutoff (resonance) region using frequency-and phase-matching conditions of the waves.

• 한국진공학회지
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• 제2권4호
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• pp.501-506
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• 1993

The spatial potential distribution of electron cyclotron resonance plasma is measured as a function of tehsubstrate DC bias by Langmuir probe method. It is observed that the substrate DC bias changes the slope of the plasma potential near the subsrate, resulting in changes in flux and energy of the impinging ions across plasma $_strate boundary along themagnetric field. The effect of the substrate DC bias on the low-temperature silicon homoepitaxy (below $560^{\circ}C$) is examine dby in situ reflection high energy electron diffraction (RHEED), cross-section transmission electron microscopy (XTEM),plan-view TEM and high resolution transmision electron microscopy(HRTEM). While the polycrystalline silicon layers are grow withnegative substrate biases, the single crystaline silicon layers are grown with negative substrate biases, the singel crystalline silicon layers are grown with positive substrate biases. As the substrate bias changes form negative to positive values, the growth rate decreases. It is concluded that the control of the ion energy during plasma deposition is very important in silicon epitaxy at low temperatures below $560^{\circ}C$ by UHV-ECRCVD.VD.

• 한국재료학회지
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• 제10권12호
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• pp.819-824
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• 2000

본 연구에서는 Electron Cyclotron Resonance plasma etching system 을 이용한 Ta 박막의 미세 식각 특성을 연구하였다. 염소 plasma를 사용하여 microwave power, RF Power, working pressure, gas chemistry 등의 변화에 따른 식각 profile의 영향을 조사하였고, pattern density가 증가함에 따라 발생하는 microloading 현상을 $0.2{\mu\textrm{m}}$ 이하의 패턴에서 확인 하였다. 이를 개선하기 위하여 식각 과정을 두 단계로 분리하는 2단계 식각 공정을 수행하였으며 이를 통해 우수한 식각 profile을 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.274-274
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• 2012

We have researched on controlling an electron temperature and a plasma collision frequency to study the effect of collisions on helicon plasmas. So, we have designed and constructed an electron cyclotron resonance (ECR) heating system in the helicon device as an auxiliary heating source. Since then, we have tried to optimize experimental designs such as a magnetic field configuration for ECR heating and 2.45GHz microwave launching system for its power transfer to the plasma effectively, and have characterized plasma parameters using a Langmuir probe. For improving an efficiency of the ECR heating with R-wave in the helicon plasma, we would understand an effect of R-wave propagation with ECR heating in the helicon plasma, because the efficiency of ECR heating with R-wave depends on some factors such as electron temperature, electron density, and magnetic field gradient. Firstly, we calculate the effect of R-wave propagation into the ECR zone in the plasma with those factors. We modify the magnetic field configuration and this system for the effective ECR heating in the plasma. Finally, after optimizing this system, the plasma parameters such as electron temperature and electron density are characterized by a RF compensated Langmuir probe.

• Nuclear Engineering and Technology
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• 제54권1호
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• pp.207-219
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• 2022

The suppression of high-intensity blob structures in the scrape-off layer (SOL) by ion-cyclotron range of frequencies (ICRF) power, leading to a decrease in the turbulent fluctuation level, is observed first in the Experimental Advanced Superconducting Tokamak (EAST) experiment. This suppression effect from ICRF power injection is global in the whole SOL at EAST, i.e. blob structures both in the regions that are magnetically connected to the active ICRF launcher and in the regions that are not connected to the active ICRF launcher could be suppressed by ICRF power. However, more ICRF power is required to reach the full blob structure suppression effect in the regions that are magnetically unconnected to the active launcher than in the regions that are magnetically connected to the active launcher. Studies show that a possible reason for the blob suppression could be the enhanced E_r × B shear flow in the SOL, which is supported by the shaper radial gradient in the floating potential profiles sensed by the divertor probe arrays with increasing ICRF power. The local RF wave power unabsorbed by the core plasma is responsible for the modification of potential profiles in the SOL regions.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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• pp.87-96
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• 2000

The properties of polyimide for interlayer dielectric applications are investigated during plasma etching of aluminum on it. Chlorine-based plasma generally used for aluminum etching results in an increase in the (dielectric constant of polyimide, while $SF_6$ plasma exhibits a high polyimide etch rate and a reducing effect of the dielectric constant. The leakage current of polyimide is significantly suppressed after plasma exposure. An optimal combination of Al etch with $Cl_6$ plasma and polyimide etch with $SF_6$ plasma is expected to be a good tool for realizing multilevel metallization structures.

• 마이크로전자및패키징학회지
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• 제7권4호
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• pp.43-47
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• 2000

Electron cyclotron resonance플라즈마 식자 장비를 이용하여 순수 chlorine플라즈마로 Ta박 막의 식각 특성에 관해 조사하였다. Ta박막의 시각 기구를 연구하기 위해 Optical emission actinometry (OEA)를 사용하였고 OEA조사를 통하여 최적의 공정 조건을 얻었다. 이것에 기초하여 2단계 식각을 수행하였고 마이크로 로딩 철상을 성공적으로 제어하면서 0.15 $\mu\textrm{m}$ L & S 의 우수한 단면을 얻었다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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• pp.97-102
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• 2000

We have studied etching characteristic of Ta film using Electron Cyclotron Resonance (ECR) etcher system. Microwave source power. RF bias power. and working pressure were varied to investigate the etch Profile. And we have used two step etching method to acquire the goWe have studied etching characteristic of Ta film using Electron Cyclotron Resonance (ECR) etcher system. Microwave source power. RF bias power. and working pressure were varied to investigate the etch Profile. And we have used two step etching method to acquire the good etch profile preventing the microloading effect.od etch profile preventing the microloading effect.