• Title/Summary/Keyword: Plasma resistance glass

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Study on Property of Diamond Mobile Telephone Windows

  • Lin, Liu-Tie;Sheng, Yang-Guang;Wu, Zhou-Jian;Ning, Sun-Yi
    • Journal of Korean Vacuum Science & Technology
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    • v.6 no.2
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    • pp.105-107
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    • 2002
  • a-C:H films were coated on windows of mobile telephone by RF plasma chemical vapor deposition equipment made in our company. Thickness of the coatings is about 0.7 micrometers and they have high hardness, low friction coefficient, good adhesion, high optical transparency and chemical inertness. Knoop hardness of the diamond-like carbon films on glass substrate is 2328 kg/mm$^2$. The adherence between films and substrate is good and shows to be 69 N by scratching test. The optical performance is improved obviously owing to coat the film on it. The index of the coated windows is 2.5, transmission of visible light is larger than 90%, and transmission of ultraviolet light decreases by 30% and the ultraviolet light can be obstructed obviously. The coated glass also has self-clean effect and decontamination ability. The films have hydrophobic character and the soakage angle of water drop is larger than 90 degrees. The windows have fog-proof ability owing to eliminate the capillary phenomena in the inner surface. The physics and chemical properties of the coated windows are steady. Study indicates that the performance of a-C:H coated mobile phone windows are improved notably on wear-resistance, corrosion-proof and optical properties and it is excellent mobile windows protective coatings.

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Interface Control to get Higher Efficiency in a-Si:H Solar Cell

  • Han, Seung-Hee;Kim, En-Kyeom;Park, Won-Woong;Moon, Sun-Woo;Kim, Kyung-Hun;Kim, Sung-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.193-193
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    • 2012
  • In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.

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Formation of $Al_O_3$Barrier in Magnetic Junctions on Different Substrates by $O_2$Plasma Etching

  • Wang, Zhen-Jun;Jeong, Won-Cheol;Yoon, Yeo-Geon;Jeong66, Chang-Wook;Joo, Seung-Ki
    • Journal of Magnetics
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    • v.6 no.3
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    • pp.90-93
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    • 2001
  • Co/$Al_O_3$/NiFe and CO/$Al_O_3$/Co tunnel junctions were fabricated by a radio frequency magnetron sputtering at room temperature with hard mask on glass and $4^{\circ}$ tilt cut Si (111) substrates. The barrier layer was formed through two steps. After the Al layer was deposited, it was oxidized in the chamber of a reactive ion etching system (RIE) with $O_2$plasma at various conditions. The dependence of the TMR value and junction resistance on the thickness of Al layer (before oxidation) and oxidation parameters were investigated. Magnetoresistance value of 7% at room temperature was obtained by optimizing the Al layer thickness and oxidation conditions. Circular shape junctions on $4^{\circ}$tilt cut Si (111) substrate showed 4% magnetoresistance. Photovoltaic energy conversion effect was observed with the cross-strip geometry junctions on Si substrate.

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Optically Transparent ITO Film and the Fabrication of Plasma Signboard (투명 전극 ITO 박막의 열처리 영향과 플라즈마 응용 표시소자 제작에 관한 연구)

  • Jo, Young Je;Kim, Jae-Kwan;Han, Seung-Cheol;Kwak, Joon-Seop;Lee, Ji-Myon
    • Korean Journal of Metals and Materials
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    • v.47 no.1
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    • pp.44-49
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    • 2009
  • Indium tin oxide(ITO) thin films were deposited on the glass substrates by radio-frequency (RF) magnetron sputtering method. The influence of rapid thermal annealing (RTA) treatment on the optical and electrical properties of the films were investigated for the purpose of fabricating plasma display signboard. Structural properties, surface roughness, sheet resistance and transmittance of the ITO film were analysed by using x-ray diffraction method, atomic force microscopy (AFM), four point prove, and ultraviolet-visible spectrometer, respectively. It was found that the RTA treatment increased the transmittance and decreased the resistivity of the ITO film, respectively. Furthermore, we successfully demonstrated the direct-current plasma signboard by using ITO electrode and phosphors.

Dielectric and Passivation-Related Properties of Pecvd PSG (PECVD PSG의 유전 및 보호막특성에 관한 연구)

  • 유현규;강영일
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.22 no.2
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    • pp.90-96
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    • 1985
  • The properties of plasma-enhanced CVD phosphorous silicate glass (PECVD PSG) for passivation layer are studied . Phosphorous contentration was analyzed with X-ray fluores-cence. As a result, PECVD PSG has a limiting phosphors concentration of about 8 mole%. Curves relating to etcll rate, infrared absorption ratio, and sheet resistivity were adapted to monitor phosphorous concentration indirectly Dielectric properties, step coverage, crack resistance, and gettering effect are discussed in both of atmospheric pressure CVD (APCVO) and PECVD oxide. PECVD SiO2 film have density of about 2.4 g/㎤ at deposition rate of 450$\AA$/min, refractive index of about 1.53, and breakdown at fields of II-13 MV/cm. Crack resistance of PECVD oxide is greater than APCVD oxide. PECVD PSG films contained with 2 mole % phosphorous show good step coverage and gettering ability. The obtained results show more advantages in PECVD PSG than in APCVD PSG for device passivation.

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Effects of ceramic fillers on fracture resistance of barrier ribs of PDP

  • Baek, Se-Kyung;Kim, Yong-Seog
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.552-554
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    • 2004
  • Barrier ribs of plasma display panel (PDP) are glass matrix composite reinforced with alumina particles. Mechanical properties of the ribs are very crucial for the improvement in reliability of the panel as the ribs might fracture during transportation and service. In this study, therefore, the effects of filler type and content on the mechanical properties of the ribs were investigated. The fillers used include $Al_2O_3$, $TiO_2$, $ZrO_2$ and fused silica. The content of the filler was changed from 0 to 40 vol.%. The mechanical properties of the ribs measured were hardness, Young's modulus, fracture toughness, and 3-point bending modulus. The fracture toughness evaluated by micro-Vicker's indentation of the composites, in general, was measured to increase with the content of the filler until the sintered density does not decrease significantly. The improvement, however, was dependent on the type of filler employed.

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The invariant design of planar magnetron sputtering TFT-LCD

  • Yoo, W.J.;Demaray, E.;Hosokawa;Pethe, R.
    • Journal of Korean Vacuum Science & Technology
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    • v.3 no.2
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    • pp.101-106
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    • 1999
  • The main consideration factor to design a magnetron of the sputtering system for TFT-LCD metallization is high sheet resistance (Rs) uniformity which is provided by the high target erosion and high current efficiency. The present study has developed a rectangular magnetron for TFT-LCD to bve considered full target erosion and high film uniformity. After an aluminum-2 at.% and alloy target was installed in a magnetron source and the film was deposited on the glass of 600${\times}$720 mm, the Rs uniformity of the deposited film was measured as functions of the magnet tilt and magnet scanning configuration. And the target erosion profile was observed with the target voltage. When sputtered at 4mtorr and 10kW, the magnet tilt for the high Rs uniformity of 8.38% was 7mm. The plasma voltage at the dwell home and end for full-face target erosion, when scanned the magnetron was 120% compared to the mean voltage of the other area.

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A Study on the Anti-Stiction Coating of Glass Lens Mold for Optical Communication (광통신용 글라스렌즈 성형 금형의 이형성 코팅에 관한 연구)

  • Jeong, Woon-Jo;Cho, Jae-Cheol
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.6
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    • pp.962-967
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    • 2017
  • The Diamond-Like-Carbon (DLC) coating is a new carbon-based amorphous material. Carbon ions in the plasma are electrically accelerated and collide with the substrate to form a thin film. This film has similar properties to diamonds such as high surface hardness, low coefficient of friction, corrosion resistance and durability that do not react with acids and bases. Also, since there is no thermal deformation, it can be printed at room temperature. and coated on almost all materials such as paper, polymer, ceramics and various metals even aspheric lens it is possible to mirror surface coating with excellent surface roughness. In this paper, we have analyzed the DLC film formed by Filtered Arc Ion Plating (Filtered AIP) process.

Development of CNT Coating Process using Argon Atmospheric Plasma (아르곤 상압플라즈마를 이용한 CNT 코팅 공정 기술 개발)

  • Kim, Kyoung-Bo;Lee, Jongpil;Kim, Moojin
    • Journal of Industrial Convergence
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    • v.20 no.10
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    • pp.33-38
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    • 2022
  • In this paper, a simple method of forming a solution-based carbon nanotube (CNT) for use as a conductive material for electronic devices was studied. The CNT thin film coating was performed on the glass by applying the spin coating method and the argon atmospheric pressure plasma process. In order to observe changes in electrical and physical properties according to the number of coatings, samples formed in the same manner from times 1 to 5 were prepared, and surface shape, reflectance, transmittance, absorbance, and sheet resistance were measured for each sample. As the number of coatings increased, the transmittance decreased, and the reflectance and absorptivity increased in the entire measurement wavelength range. Also, as the wavelength decreases, the transmittance decreases, and the reflectance and absorption increase. In the case of electrical properties, it was confirmed that the conductivity was significantly improved when the second coating was applied. In conclusion, in order to replace CNT with a transparent electrode, it is necessary to consider the number of coatings in consideration of reflectivity and electrical conductivity together, and it can be seen that 2 times is optimal.

Characterization and Formation Mechanism of Zr-Cu and Zr-Cu-Al Metallic Glass Thin Film by Sputtering Process

  • Lee, Chang-Hun;Sun, Ju-Hyun;Moon, Kyoung-Il;Shin, Seung-Yong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.271-272
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    • 2012
  • Bulk Metallic Glasses (BMGs or amorphous alloy) exhibit high strength and good corrosion resistance. Applications of thin films and micro parts of BMGs have been used a lot since its inception in the research of BMGs. However, Application and fabrication of BMGs are limited to make structural materials. Thin films of BMGs which is sputtered on the surface of structural materials by sputtering process is used to improve limits about application of BMGs. In order to investigate the difference of properties between designed alloys and thin films, we identified that thin films deposited on the surface that have the characteristic of the amorphous films and the composition of designed alloys. Zr-Cu (Cu=30, 35, 38, 40, 50 at.%) and Zr-Cu-Al (Al=10 at.% fixed, Cu=26, 30, 34, 38 at.%) alloys were fabricated with Zr (99.7% purity), Cu (99.997% purity), and Al (99.99% purity) as melting 5 times by arc melting method before rods 2mm in diameter was manufactured. In order to analyze GFA (Glass Forming Ability), rods were observed by Optical Microscopy and SEM and $T_g$, $T_x$, ($T_x$ is crystallization temperature and $T_g$ is the glass transition temperature) and Tm were measured by DTA and DSC. Powder was manufactured by Gas Atomizer and target was sintered using powder in large supercooled liquid region ($=T_x-T_g$) by SPS(Spark Plasma Sintering). Amorphous foil was prepared by RSP process with 5 gram alloy button. The composition of the foil and sputtered thin film was analyzed by EDS and EPMA. In the result of DSC curve, binary alloys ($Zr_{62}Cu_{38}$, $Zr_{60}Cu_{40}$, $Zr_{50}Cu_{50}$) and ternary alloys ($Zr_{64}Al_{10}Cu_{26}$, $Zr_{56}Al_{10}Cu_{34}$, $Zr_{52}Al_{10}Cu_{38}$) have $T_g$ except for $Zr_{70}Cu_{30}$ and $Zr_{60}Al_{10}Cu_{30}$. The compositions with $T_g$ made into powders. Figure shows XRD data of thin film showed similar hollow peak.

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