• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2010년도 춘계학술발표대회
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• pp.1062-1065
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• 2010

Plasma 물성 데이터는 Plasma내에서 일어나는 입자(전자, 원자, 이온, 분자 등)들의 충돌에 대한 데이터로써 Plasma 발생 장치 설계 및 제어의 핵심 요소이며, Plasma 공정조건 확립을 위한 필수 정보가 된다. 참조표준은 과학기술데이터나 정보에 대하여 정확도와 신뢰도에 대한 분석 및 평가가 이루어진 공인데이터를 말한다. 이러한 플라즈마 물성 정보를 체계적으로 관리하고 신뢰성 있는 데이터를 필요로 하는 산업체에 지원하기 위하여 특정 참조표준과 참조데이터로 제정, 보급하는 Plasma 물성 참조표준 수집평가 시스템이 필요하고, 이에 대한 설계가 필요하다.

• 한국표면공학회지
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• 제29권5호
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• pp.357-362
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• 1996

Several applications of radio-frequency (RF) thermal plasma to film formation are reviewed. Three types of injection plasma processing (IPP) technique are first introduced for the deposition of materials. Those are thermal plasma chemical vapor deposition (CVD), plasma flash evaporation, and plasma spraying. Radio-frequency (RF) plasma and hybrid (combination of RF and direct current(DC)) plasma are next introduced as promising thermal plasma sources in the IPP technique. Experimental data for three kinds of processing are demonstrated mainly based on our recent researches of depositions of functional materials, such as high temperature semiconductor SiC and diamond, ionic conductor $ZrO_2-Y_2O_3$ and high critical temperature superconductor $YBa_2Cu_3O_7-x$. Special emphasis is given to thermal plasma flash evaporation, in which nanometer-scaled clusters generated in plasma flame play important roles as nanometer-scaled clusters as deposition species. A novel epitaxial growth mechanism from the "hot" clusters namely "hot cluster epitaxy (HCE)" is proposed.)" is proposed.osed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.183-183
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• 2016

Inductively coupled plasma having the high-density is often used for high productivity in the plasma processing. In large area processing, the plasma can be generated by using the multi-pole connected in parallel. However, in case of this, the power cannot transfer to plasma uniformly. To address the problem, we studied the mechanism of inductively coupled plasma connected in parallel by using transformer model. We also studied about the change of the plasma parameters over the time through the power balance equation and particle balance equation.

• 복식문화연구
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• 제11권1호
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• pp.66-74
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• 2003

This study is to improve the worst lightfastness of a natural dye. To modify the fiber surface, low temperature oxygen plasma was carried out on silk fabric. The result is followed below after the examination of surface shape, dyeability, color change, UV absorbent influence and lightfastness. 1. When electric discharge outputs are 60W, 80W and 100w, and processing times are 10minutes, 20minutes and 40minutes, the etching effect of surface increased as electric discharge outputs and processing times increased. 2. When examined UV absorbent for 5hours, 10hours, 20hours, 40hours and 80hours, the value changes of E are 1.47, 2.51, 2.91, 3.71, 4.51 and 5.31 in case of Al pre-mordanting/ prasma 80W, 20min./ UVabsorbent 5% (100:1), 2.31, 2.47, 3.84, 3.90, 3.61 and 4.42 in case of Al pre-mordanting/prasma 80W, 20min.1 UV absorbent 5% (o.w.f.). The lightfastness decreased when UV absorbent increased. 3. Dyeability of the samples pre-treated with five different methods was in the following order: plasma processing for 20minutes at 60W/Al pre-mordanting > Al pre-mordanting > plasma processing for 20minutes at 60W > Al after-mordanting. non mordanting Plasma treatment had superior effect on dyeability. 4. When UV absorbent was applied in fabric, the sample under higher electric discharge out puts showed more effective in improving lightfastness.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.364-366
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• 1997

An experimental helical resonator plasma system that can be applied to the next generation semiconductor processing was fabricated and its characteristics was investigated. Helical resonator plasma can operate both in a capacitive and an inductive mode. Such sources will produce an extended plasma for the capacitive mode and a plasma concentrated in the resonator for the inductive mode. Plasma parameters were measured with Double Langmuir Probes. Plasma densities of $10^{11}{\sim}10^{12}cm^{-3}$ were produced in argon for pressure in the $2{\sim}120\;mTorr$ range. From the results, we conclude that helical resonator plasma can be applied to the next generation semiconductor processing.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.293-293
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• 2014

The applicability of graphene has been demonstrated in the electronic fields. But, high performance of graphene is limited by the contact resistance (Rc) at the metal-graphene interface. Recently, Rc was found to be improved by forming edge-contacted graphene via theoretical simulation. Based on the differences between the surface and edge contacts at the M-G interface, we demonstrate "edge-contacted" graphene through the use of a controlled plasma processing technique that generates the edge structure of the bond and significantly reduces the contact resistance. The contact resistance attained by using pre-plasma processing was of $270{\Omega}{\cdot}{\mu}m$. Mechanisms of pre-plasma process leading to low Rc was revealed by SEM and Raman spectroscopy. In the end, controlled pre-plasma processing enabled to fabricate CVD-graphene field effect transistors with an enhanced adhesion and improved carrier mobility.

• 한국표면공학회지
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• 제32권3호
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• pp.297-302
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• 1999

In situ measurement of infrared absorption spectra has been performed during low-temperature plasma-enhanced chemical vapor depositiion of silicon-oxide films using tetramethoxysilane as a silicon source. Several absorption bands due to the reactant molecules are clearly observed before deposition. In the plasma, these bands completely disappear at any oxygen mixing ratio. This result shows that most of the tetramethoxysilane molecules are dissociated in the rf plasma, even C-H bonds. Existence of Si-H bonds in vapor phase and/or on the film surface during deposition has been found by infrared diagnostics. We observed both a decrease in Si-OH absorption and an increase in Si-O-Si after plasma off, which means the dehydration condensation reaction continues after deposition. The rate of this reaction is much slower than the deposition ratio of the films.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2009년도 추계학술대회 논문집
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• pp.358-361
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• 2009

The increasing interest in the surface modification technology by the plasma transferred arc overlaying process in the material processing is placing stringent demands on the manufacturing techniques and performance requirements, and the manufacture employs the high quality and efficiency plasma transferred arc overlaying technology. This paper covers recent technical trends of plasma transferred arc overlaying technology including the COMPENDEX DB analysis.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2002년도 ICCAS
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• pp.32.5-32
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• 2002

Processing plasmas are playing a crucial role in either depositing thin films or etching fine patterns. Any variability in process factors (such as radio frequency power or pressure) can cause a significant shift in plasma state. When this shift becomes large enough to change operating condition beyond an acceptable level, overall product quality can greatly be jeopardized. Thus, timely and accurate diagnosis of plasma malfunction is crucial to maintaining device yield and throughput. Many diagnostic systems have been developed, including HIPOCRATES [1] and PIES [2]. Plasma equipment was also diagnosed by combining neural network and expert system called Dempster-Schafer Theory [3]. A fact c...

• 한국안전학회지
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• 제20권1호
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• pp.94-100
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• 2005

The plasma, ionized gas state, is generally composed as the 4th state in the universe. Generating the plasma artificially has been studied by spending energy and it has been applied so much in human's life. There are several merits to modify the surface of polymer using plasma. Above all, plasma maintains the properties of polymer itself, but changes the properly of polymer surface only. Also, it is the environmentally fraternized because there are no waste processing from organic solvent. Furthermore, it is possible that continuous automated-processing in case of high-pressure plasma. Therefore, we have tried the reforming of surface to rise the adhesive strength between the material of polymer, and have experimented rising the adhesive strength through peel strength by virtue of processing time and using gas, of course, confirmed the change of polymer surface through measuring the contact angle analysis and scanning electron microscopy(SEM).