• 제목/요약/키워드: Plasma organic coating

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Properties of Inkjet and Screen Printed Circuits with Substrate Treatments

  • Lee, Min-Su;Kim, Yong-Uk;Kim, Yeong-Hun;Yu, Ui-Deok
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.4.1-4.1
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    • 2011
  • Recently, circuit printing technology has been considered as a promising alternative to conventional PCB fabrication, for it can greatly reduce the manufacturing costs. Even though printed circuit has many advantages over typical subtractive technology such as fewer processes, it has some disadvantages. The major problems are low adhesion and poor resolution. Efforts to overcome these problems have been mainly focused on ink developments with a limited success. And surface treatments showed some improvements. Therefore, various plasma treatments and primer coatings on plastic substrates have been tested. Plasma treatments using hydrocarbon gases including methane and propane improved the pattern quality of the inkjet printed circuit, which are further improved upon heating of substrate. On the other hand, there is little effect on the adhesion, which is improved only by a special primer coating. The adhesion of inkjet printed circuit has been increased more than 10 times upon treatment. As for the screen printed circuits, the overall effects are less significant since there is some organic binder in the ink. Nonetheless, the treatment has strong positive effects on pattern quality and adhesion. The adhesion of 1 kgf/cm2, which is comparable with those of the conventional PCB circuits, is possible through primer coating for both screen and inkjet printed circuits. The resulting circuit also showed good thermal, mechanical and electrical properties.

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DEVELOPMENT OF MEMBRANE AND COLD-CONDENSATION PROCESS FOR REMOVAL AND RECOVERY OF VOLATILE ORGANIC COMPOUNDS

  • Kim, Sung-Soo;Lee, Jong-Hwa;Kim, Hyunki;Kim, Sang-Yong
    • Proceedings of the Membrane Society of Korea Conference
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    • 2003.07a
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    • pp.69-72
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    • 2003
  • Volatile organic compounds (VOC) cause air pollution problem and deterioration of atmosphere of petrochemical and fine chemical plants. Hybrid process of membrane and cold-condensation were developed and it effectively removed and recycled the VOC. Operation parameters of the process were optimized to attain hish removal and recycle of VOC. Composite membranes for organic vapor separation were developed in this work by PDMS coating and plasma polymerization on polypropylene and polysulfone support membranes. PDMS and various silicone monomers were tested for several organic vapors such as benzene, toluene, TCE, and HCFC, which are produced in petrochemical and fine chemical industry and causes air pollution problems if are released to atmosphere. Composite membranes prepared in this work showed appreciable performance in terms of organic vapor removal and reuse. Performance variation of the membranes was correlated with their surface characteristics.

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Atmospheric Pressure Plasma를 이용한 Oxide Thin Film Transistor의 특성 개선 연구

  • Mun, Mu-Gyeom;Kim, Ga-Yeong;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.582-582
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    • 2013
  • Oxide TFT (thin film transistor) active channel layer에 대한 저온 열처리 공정은 투명하고 flexibility을 기반으로하는 display 산업과 AMOLED (active matrix organic light emitting diode) 분야 등 다양한 분야에서 필요로 하는 기술로서 많은 연구가 이루어지고 있다. 과거 active layer는 ALD (atomic layer deposition), CVD (chemical vapor deposition), pulse laser deposition, radio frequency-dc (RF-dc) magnetron sputtering 등과 같은 고가의 진공 장비를 이용하여 증착 되어져 왔으나 현재에는 진공 장비 없이 spin-coating 후 열처리 하는 저가의 공정이 주로 연구되어 지고 있다. Flexible 기판들은 일반적인 OTFT (oxide thin films Transistor)에 적용되는 열처리 온도로 공정 진행시 열에 의한 기판의 손상이 발생한다. Flexible substrate의 열에 의한 기판 손상을 막기 위해 저온 열처리 공정이 연구되고 있지만 기존 열처리와 비교하여 소자의 특성 저하가 동반 되었다. 본 연구에서는 Si 기판위에 SiO2 (100)를 절연층으로 증착하고 그 위에 IZO (indium zinc oxide) solution을 spin-coating 한뒤 $250^{\circ}C$ 이하의 온도에서 열처리하였다. 저온 공정으로 인하여 소자의 특성 저하가 동반 되었으므로 소자의 저하된 특성 복원하고자 post-treatment로 고가의 진공장비가 필요 없고 roll-to roll system 적용이 수월한 remote-type의 APP (atmospheric pressure plasma) 처리를 하였다. Post-treatment로 APP를 이용하여 $250^{\circ}C$ 이하에서 소자에 적용 가능한 on/off ratio를 얻을 수 있었다.

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Optical properties of the $O_2$ plasma treatment on BZO (ZnO:B) thin films for TCO of a-Si solar cells

  • Yoo, Ha-Jin;Son, Chang-Gil;Cho, Won-Tea;Park, Sang-Gi;Choi, Eun-Ha;Kwon, Gi-Chung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.454-454
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    • 2010
  • In order to achieve a high efficient a-Si solar cell, the TCO (transparent conductive oxide) substrates are required to be a low sheet resistivity, a high transparency, and a textured surface with light trapping effect. Recently, a zinc oxide (ZnO) thin film attracts our attention as new coating material having a good transparent and conductive for TCO of solar cells. In this paper the optical properties of $H_2$ post-treated BZO (boron doped ZnO, ZnO:B) thin film are investigated with $O_2$-plasma treatment. The BZO thin films by MOCVD (Metal Organic Chemical Vapor Deposition) are investigated and the samples of $H_2$ post-treated BZO thin film are tested with $O_2$-plasma treatment by plasma treatment system with 13.56 MHz as RIE (Reactive Ion Etching) type. We measured the optical properties and surface morphology of BZO thin film with and without $O_2$-plasma treatment. The optical properties such as transmittance, reflectance and haze are measured with integrating sphere and ellipsometer. This result of the BZO thin film with and without $O_2$-plasma treatment is application to the TCO for solar cells.

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New Approaches for Overcoming Current Issues of Plasma Sputtering Process During Organic-electronics Device Fabrication: Plasma Damage Free and Room Temperature Process for High Quality Metal Oxide Thin Film

  • Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.100-101
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    • 2012
  • The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

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High Quality Nano Structured Single Gas Barrier Layer by Neutral Beam Assisted Sputtering (NBAS) Process

  • Jang, Yun-Sung;Lee, You-Jong;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.251-252
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    • 2012
  • Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low Water Vapor Transition Rate (WVTR) of $1{\times}10^{-6}g/m^2$/day. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2$/day) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study, we developed an $Al_2O_3$ nano-crystal structure single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS system is based on the conventional RF magnetron sputtering and neutral beam source. The neutral beam source consists of an electron cyclotron Resonance (ECR) plasma source and metal reflector. The Ar+ ions in the ECR plasma are accelerated in the plasma sheath between the plasma and reflector, which are then neutralized by Auger neutralization. The neutral beam energies were possible to estimate indirectly through previous experiments and binary collision model. The accelerating potential is the sum of the plasma potential and reflector bias. In previous experiments, while adjusting the reflector bias, changes in the plasma density and the plasma potential were not observed. The neutral beam energy is controlled by the metal reflector bias. The NBAS process can continuously change crystalline structures from an amorphous phase to nano-crystal phase of various grain sizes within a single inorganic thin film. These NBAS process effects can lead to the formation of a nano-crystal structure barrier layer which effectively limits gas diffusion through the pathways between grain boundaries. Our results verify the nano-crystal structure of the NBAS processed $Al_2O_3$ single gas barrier layer through dielectric constant measurement, break down field measurement, and TEM analysis. Finally, the WVTR of $Al_2O_3$ nano-crystal structure single gas barrier layer was measured to be under $5{\times}10^{-6}g/m^2$/day therefore we can confirm that NBAS processed $Al_2O_3$ nano-crystal structure single gas barrier layer is suitable for OLED application.

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Removal of Volatile Organic Compounds by Photo-Catalytic Oxidation

  • Lee, Byeong-Kyu;Jung, Kwang-Ryun
    • Journal of Korean Society for Atmospheric Environment
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    • v.16 no.E
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    • pp.39-46
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    • 2000
  • Volatile Organic Compounds (VOCs) are considered as the precursors of atmospheric ozone and photochemical smog formation. In particular, chemical plants have produced a lot of VOCs and thus they have been forced to reduce or remove air emissions from the on-site chemical facilities. For the effective removal of VOCs produced in the chemical plants, the authors employed a titanium oxide(TiO$_2$) mediated photo-catalytic oxidation method. The initiation methods employed in this study to produce oxygen radicals for th photo-catalytic oxidation of the VOCs were Ultra-Violet(UV), Non-Thermal Plasma(NTS), and a combination of Uv and NTP. This study focused on a comparison of the removal efficiencies of VOCs as a function of the initiation method such as NTP and/or UV techniques. Removal efficiency change of VOCs as was investigated as a function of the wavelength of the UV lamp(254, 302, and 365 nm) and the degree of TiO$_2$ coating (10 and 30%). In this study, it was identified that removal efficiencies if the VOCs under the normal air environment were much better than those under the nitrogen gas environment containing small amount of oxygen. Removal efficiency by NTP technique was much better than the UV or the combination of UV and NTP techniques. In a comparison if UV wavelengths employed, it was found that shorter wavelength showed better removal efficiency, compared with longer ones. When the removal efficiencies of VOCs were compared in terms of the degree of TiO$_2$ coating, the higher TiO$_2$coating showed better removal efficiency that the lower TiO$_2$ coating

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Atmospheric Pressure Plasma Etching Technology for Forming Circular Holes in Perovskite Semiconductor Materials (페로브스카이트 반도체 물질에 원형 패턴을 형성하기 위한 상압플라즈마 식각 기술)

  • Kim, Moojin
    • Journal of Convergence for Information Technology
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    • v.11 no.2
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    • pp.10-15
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    • 2021
  • In this paper, we formed perovskite (CH3NH3PbI3) thin films on glass with wet coating methods, and used various analytical techniques to discuss film thickness, surface roughness, crystallinity, composition, and optical property. The coated semiconductor material has no defects and is uniform, the surface roughness value is very small, and a high absorption rate has been observed in the visible light area. Next, in order to implement the hole shape in the organic-inorganic layer, Samples in the order of a metal mask with holes at regular intervals, a glass coated with a perovskite material, and a magnet were etched with atmospheric pressure plasma equipment. The shape of the hole formed in the perovskite material was analyzed by changing the time. It can be seen that more etching is performed as the time increases. The sample with the longest processing time was examined in more detail, and it was classified into 7 regions by the difference according to the location of the plasma.

Improving Smoothness of Hydrophilic Natural Polymer Coating Layer by Optimizing Composition of Coating Solution and Modifying Chemical Properties of Cobalt-Chrome Stent Surface (코팅 용액의 조성 최적화 및 코발트-크롬 금속스텐트의 화학적 표면개질을 통한 친수성 천연 고분자 코팅층의 표면 거칠기 개선)

  • Kim, Dae Hwan;Kum, Chang Hun
    • Journal of Chitin and Chitosan
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    • v.23 no.4
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    • pp.256-261
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    • 2018
  • Recently, the number of cardiovascular disease-related deaths worldwide has increased. Therefore, the importance of percutaneous cardiovascular intervention and drug-eluting stents (DES) has been highlighted. Despite the great clinical success of DES, the re-endothelialization at the site of stent implantation is retarded owing to the anti-proliferative effect from the coated drug, resulting in late thrombosis or very late restenosis. In order to solve this problem, studies have been actively carried out to excavate new drugs that promote rapid re-endothelialization. In this study, we introduced hydrophilic drug, tauroursodeoxycholate (TUDCA), that improves the proliferation of endothelial progenitor cells and promotes apoptosis of vascular smooth muscle cells. In addition, we utilized shellac, which is a natural resin from lac bug to coat TUDCA on the surface of the metal. When using conventional coating method including biodegradable polymers and organic solvents, phase separation between polymer and drug occurred in the coating layer that caused incomplete incorporation of drug into the polymer layer. However, when using shellac as a coating polymer, no phase separation was observed and drug was fully covered with the polymer matrix. In addition, by adjusting the composition of coating solution and modifying the hydrophilicity of the metal surface using oxygen plasma, the surface roughness decreased due to the increased affinity between coating solution and metal surface. This result provides a method of depositing a hydrophilic drug layer on the stent.

Microstructure and Hardness of Titanium Aluminide/Carbide Composite Coatings Prepared by Reactive Spray Method (반응성 스프레이방법으로 제작한 티타늄 알루미나이드/탄화물 복합박막의 미세조직과 경도)

  • Han, Chang-Suk;Jin, Sung-Yooun
    • Korean Journal of Materials Research
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    • v.30 no.7
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    • pp.350-358
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    • 2020
  • A variety of composite powders having different aluminum and carbon contents are prepared using various organic solvents having different amounts of carbon atoms in unit volume as ball milling agents for titanium and aluminum ball milling. The effects of substrate temperature and post-heat treatment on the texture and hardness of the coating are investigated by spraying with this reduced pressure plasma spray. The aluminum part of the composite powder evaporates during spraying, so that the film aluminum content is 30.9 mass%~37.4 mass% and the carbon content is 0.64 mass%~1.69 mass%. The main constituent phase of the coating formed on the water-cooled substrate is a non-planar α2 phase, obtained by supersaturated carbon regardless of the alloy composition. When these films are heat-treated at 1123 K, the main constituent phase becomes γ phase, and fine Ti2AlC precipitates to increase the film hardness. However, when heat treatment is performed at a higher temperature, the hardness is lowered. The main constitutional phase of the coating formed on the preheated substrate is an equilibrium gamma phase, and fine Ti2AlC precipitates. The hardness of this coating is much higher than the hardness of the coating in the sprayed state formed on the water-cooled substrate. When hot pressing is applied to the coating, the porosity decreases but hardness also decreases because Ti2AlC grows. The amount of Ti2AlC in the hot-pressed film is 4.9 vol% to 15.3 vol%, depending on the carbon content of the film.