• Journal of Magnetics
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• v.21 no.2
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• pp.222-228
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• 2016

Correlation between coil configurations and the discharge characteristics such as plasma density and the electron temperature in a newly designed magnetized inductively coupled plasma (M-ICP) etcher were investigated. Radial and axial magnetic flux density distributions as well as the magnetic flux density on the center of the substrate holder were controllable by placing multiple circular coils around the etcher. The plasma density increased up to 60.7% by arranging coils (or optimizing magnetic flux density distributions inside the etcher) properly although the magnetic flux density on the center of the substrate holder was fixed at 7 Gauss.

• Journal of Magnetics
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• v.20 no.4
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• pp.366-370
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• 2015

New ion beam etcher (IBE) using a magnetized inductively coupled plasma (M-ICP) has been developed. The magnetic flux density distributions inside the upper chamber, where the plasma is generated by inductive coupling, were successfully optimized by arranging a pair of circular coils very carefully. More importantly, the proposed M-ICP IBE exhibits higher etch rate than ICP.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.125-129
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• 2022

The current display technology tends to be highly integrated with high resolution, the element size is gradually downsized, and the structure becomes complicated. Inductively coupled plasma (ICP) dry etcher of various types of etching equipment is a structure that places a large multi-divisional antenna source on the top lid, passes current to the Antenna, and generates plasma using the induced magnetic field generated at this time. However, in the case of a device of a large area size, a support that can withstand a load structurally is necessary, and when these support portions are applied, arrangement of antenna becomes difficult, which causes reduction in uniformity. As described above, the development of antenna source of a large area having a uniform plasma density on the whole surface is difficult to restrict hardware (H/W). As a solution to this problem, we confirmed the change in uniformity of plasma by applying two kinds of specific shape faraday shield(FICP) to the lower part of the large area upper lid antenna of 6 and 8th more than that generation size. In this thesis, we verify the faraday shield effect which can improve plasma uniformity control of ICP dry etcher equipment applied to medium and large displays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.74-74
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• 2009

The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.

• Journal of Magnetics
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• v.20 no.4
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• pp.360-365
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• 2015

Spatial distributions of magnetic flux density in a newly designed magnetized inductively coupled plasma (M-ICP) etcher were investigated. Radial and axial magnetic flux densities as well as the magnetic flux density on the center of the substrate holder were controllable by placing multiple circular coils around the etcher properly. The plasma density non-uniformity in M-ICP (25 Gauss) can be reduced (1.4%) compared to that in ICP (16.7%) when the neutral gas pressure was 0.67 Pa and a right-hand circularly polarized wave (R-wave) can be propagated in to the etcher by making magnetic flux density increases both radially and axially from the center of the substrate holder.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.276-278
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• 1997

The reliable etching process is one of the essential steps in fabricating GaN based-device. High etch rate is needed to obtain a deeply etched structure and perfect anisotropic etched facet is needed to obtain lasing profile. In the research, therefore, we had proposed a planar inductively coupled plasma etcher (Planar ICP Etcher) as a high density plasma source, and studied the etching mechanism using the $CH_4/H_2$/Ar gas mixture. Dry etching characteristics such as etch rate, anisotropic etching profile and so on, for the III-V nitride layers were investigated using Planar ICP Etcher, based on the plasma characteristic as a variation of plasma process parameters.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.4
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• pp.361-365
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• 2003

A unipolar-type E-chuck was fabricated for the application of holding silicon wafers in the oxide etcher. For the fabrication of the unipolar ESC, core technologies such as coating of polyimide films and anodizing treatment of aluminum surface were developed. The polyimide films were prepared on thin coated copper substrates to minimize the plasma damage during the etch processing. Thin film heater technology was also developed for new type of E-chuck.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.309-314
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• 1999

The magnetized helical resonator plasma etcher has been built. Electron density and temperature were measured as functions of rf source power, axial magnetic field, and pressure. The results show electron density increases as the magnetic field increases and reached $2\times1012cm^{-3}$,/TEX>. The oxide etch rate and selectivity to polysilicon were investigated as the above mentioned conditions and self-bias voltage. We can obtain the much improved oxide etch selectivity to polysilicon (60 : 1) by applying the external axial weak magnetic field in magnetized helical resonator plasma etcher.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2008.05a
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• pp.23-29
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• 2008

- High Density Plasma Source-CCP-Dual/Triple, RF Frequency Control - Radical/Flux Analysis - Low Pressure Process - Chamber Design (Process gap/Wall gap) - Chamber Temp. Control. - ESC Dielectric Materials - Uniform Gas Injection

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.257-257
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• 2012

Fault detection was carried out in a etcher of capacitive coupled plasma with OES (Optical Emission Spectroscopy) and impedance by VI probe that are widely used for process control and monitoring at semiconductor industry. The experiment was operated at conventional Ar and Fluorocarbon plasma with variable change such as pressure and addition of N2 and O2 to assume atmospheric leak, RF power and pressure that are highly possible to impact wafer yield during wafer process, in order to observe OES and VI Probe signals. The sensitivity change on OES and Impedance by VI probe was analyzed by statistical method including PCA to determine healthy of process. The main goal of this study is to find feasibility and limitation of OES and Impedances for fault detection by shift of plasma characteristics and to enhance capability of fault detection using PCA.