• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.3
• /
• pp.185-189
• /
• 2001

In this paper, since the research on the etching of SrBi$_2$Ta$_2$$O_{9}$(SBT) thin film was few (specially Cl$_2$-base) we had studied the surface reaction of SBT thin films. We have used the OES(optical emission spectroscopy) in high density plasma etching as a function of RF power, dc bias voltage, and Cl$_2$/(Cl$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction. The change of Cl radical density that was measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhanced to increase the etch rates SBT thin films. These results were confirmed by XPS(x-ray photoelectron spectroscopy) analysis.s.

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.6
• /
• pp.287-291
• /
• 2012

We investigated the etching characteristics of TaN thin films in an $O_2/BCl_3/Cl_2/Ar$ gas using a high density plasma (HDP) system. A maximum etch rate of the TaN thin films and the selectivity of TaN to $SiO_2$ were obtained as 172.7 nm/min and 6.27 in the $O_2/BCl_3/Cl_2/Ar$ (3:2:18:10 sccm) gas mixture, respectively. At the same time, the etch rate was measured as a function of the etching parameters, such as the RF power, DC-bias voltage, and process pressure. The chemical states on the surface of the etched TaN thin films were investigated using X-ray photoelectron spectroscopy. Auger electron spectroscopy was used for elemental analysis on the surface of the etched TaN thin films. These surface analyses confirm that the surface of the etched TaN thin film is formed with the nonvolatile by-product.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.40-44
• /
• 2000

In this paper, since the research on the etching of SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin film was few (specially Cl$_2$-base ), we had studied the surface reaction of SBT thin films using the OES in high density plasma etching as a function of rf power, dc bias voltage, and Cl$_2$(Cl$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction in our previous papers$^{1.2}$ . The change of Cl radical density that is measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhance to increase the etch rates of SBT thin films and these results were confirmed by XPS analysis.

• Transactions on Electrical and Electronic Materials
• /
• v.6 no.2
• /
• pp.46-50
• /
• 2005

BST thin films were etched with inductively coupled CF$_{4}$/(Cl$_{2}$+Ar) plasmas. The etch characteristics of BST thin films as a function of CF$_{4}$/(Cl$_{2}$+Ar) gas mixtures were analyzed using optical emission spectroscopy (OES) and Langmuir probe. The BST films in CF$_{4}$/Cl$_{2}$/Ar plasma is mainly etched by the formation of metal chlorides which depends on the emission intensity of the atomic Cl and the bombarding ion energy. The maximum etch rate of the BST thin films was 53.6 nm/min because small addition of CF$_{4}$ to the Cl$_{2}$/Ar mixture increased chemical and physical effect. A more fast etch rate of BST films can be obtained by increasing the DC bias and the RF power, and lowering the working pressure.

• Transactions on Electrical and Electronic Materials
• /
• v.16 no.6
• /
• pp.346-350
• /
• 2015

In this study, we carried out an investigation of the etch characteristics of TiO₂ thin films and the selectivity of TiO₂ to SiO₂ in adaptive coupled C1₂/Ar plasma. The maximum etch rate of the TiO₂ thin film was 136±5 nm/min at a gas mixing ratio of C1₂/Ar (75%:25%). The X-ray photoelectron spectroscopy (XPS) analysis showed the efficient destruction of oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.385-385
• /
• 2010

In this work, we have investigated the etching characteristics of $TiO_2$ and selectivity of $TiO_2$ over $SiO_2$ thin films as resistance in ReRAM using the inductively coupled plasma. The etch rate and selectivity were measured by varying the $BCl_3$ addition into Ar plasma. The maximum etchrate was obtained at 110.1nm/min at $BCl_3$/Ar=5sccm/10sccm, 500W for RFpower, -100v for DC-bias voltage, and 2Pa for the process pressure. The etched $TiO_2$ surface was investigated with X-ray photo electron spectroscopy. We explained the etching mechanism in two etch mechanisms, physiclas puttering and chemical reaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.124-125
• /
• 2005

ZnS:Mn thin films have attracted great interest as electroluminescence devices. In this study, inductively coupled BCl$_3$/Ar plasma was used to etch ZnS:Mn thin films. We obtained the maximum etch rate of ZnS:Mn thin films was 2209 ${\AA}$/min at a BCl$_3$(20%)/Ar(80%) gas mixing ratio, an RF power of 700 W, a DC bias voltage of-250 V, a total gas flow of 20 sccm, and a chamber pressure of 1 Pa. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• Electrical & Electronic Materials
• /
• v.9 no.2
• /
• pp.188-195
• /
• 1996

The AlSi etching process using the MERIE type reactor carried out with different process parameters such as C1$_{2}$ and N$_{2}$ gas flow rate, RF power and chamber pressure. The etching characteristics were evaluated in terms of etch rate, selectivity, uniformity and etched profile. As the N2 gas flow rate is increased, the AlSi etch rate is decreased and uniformity has remained constant within .+-.5%. The etch rate is increased and uniformity is decreased, according to increment of the C1$_{2}$ gas flow rate, RF power and chamber pressure. Selective etching of TEOS with respect to AlSi is decreased as the RF power is increased while it is increased by increment of the C1$_{2}$ gas flow rate and chamber pressure, on the other hand, selective etching of photoresist with respect to AlSi is increased by increment of the C1$_{2}$ gas flow rate and chamber pressure, it is decreased as the N$_{2}$ gas flow rate is increased.

• Journal of the Korean institute of surface engineering
• /
• v.42 no.6
• /
• pp.256-259
• /
• 2009

The wafer surface temperature is an important parameter in the etching process which influences the reaction probabilities of incident species, the vapor pressure of etch products, and the re-deposition of reaction products on feature surfaces. In this study, we investigated all of the effects of substrate temperature on the etch rate of $ZrO_2$ thin film and selectivity of $ZrO_2$ thin film over $SiO_2$ thin film in inductively coupled plasma as functions of $Cl_2$ addition in $BCl_3$/Ar plasma, RF power and dc-bias voltage based on the substrate temperature in range of $10^{\circ}C$ to $80^{\circ}C$. The elements on the surface were analyzed by x-ray photoelectron spectroscopy (XPS).

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.3
• /
• pp.566-570
• /
• 2007

The specific electrical, optical and acoustic properties of Zinc Oxide (ZnO) are important for semiconductor process which has many various applications. Piezoelectric ZnO films has been widely used for such as transducers, bulk and surface acoustic-wave resonators, and acousto-optic devices. In this study, we investigated etch characteristics of ZnO thin films in inductively coupled plasma etch system with $BCl_3/Ar$ gas mixture. The etching characteristics of ZnO thin films were investigated in terms of etch rates and selectivities to $SiO_2$ as a function of $BCl_3/Ar$ gas mixing ratio, RF power, DC bias voltage and process pressure. The maximum ZnO etch rate of 172 nm/min was obtained for $BCl_3$ (80%)/Ar(20%) gas mixture. The chemical states on the etched surface were investigated with X-ray photoelectron spectroscopy (XPS).