• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.123-123
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• 1999

Amorphous hydrogenated silicon carbide (a-SiC:H) films were deposited at the temperature of 40$0^{\circ}C$ using plasma enhanced chemical vapor deposition. The a-SiC:H films were characterized by x-ray photoelectron spectroscopy (XPS) and nanoindentation method. By increasing the plasma power from 20W to 160W, the oxygen content of the a-SiC:H films were observed to decrease from 12.1% to 4.4%. On the other hand, the plasma power did not affect the ratio of carbon to silicon in our experiment where the 1, 3-disilabutane was used as the precursor. Microhardness of the films was observed to increase as the plasma power increased, while the elastic modulus was observed to gave a maximum value at the plasma power of 80W. Microhardness of the film is thought to be strongly affected by the content of adventitious oxygen in the film and it is concluded that the hardness of the film can be improved by increasing the plasma power.

• Journal of the Korean institute of surface engineering
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• v.57 no.3
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• pp.155-164
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• 2024

Physical properties of carbon nanomaterials are dependent on their nanostructures and they are modified by diverse synthesis methods. Among them, thermal plasma method stands out for synthesizing carbon nanomaterials by controlling chemical and physical reactions through various design and operating conditions such as plasma torch type, plasma gas composition, power capacity, raw material injection rate, quenching rate, kinds of precursors, and so on. The method enables the production of carbon nanomaterials with various nanostructures and characteristics. The high-energy integration at high-temperature region thermal plasma to the precursor is possible to completely vaporize precursors, and the vaporized materials are rapidly condensed to the nanomaterials due to the rapid quenching rate by sharp temperature gradient. The synthesized nanomaterials are averagely in several nanometers to 100 nm scale. Especially, the thermal plasma was validated to synthesize low-dimensional carbon nanomaterials, carbon nanotubes and graphene, which hold immense promise for future applications.

• Applied Chemistry for Engineering
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• v.20 no.5
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• pp.536-541
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• 2009

Plasma-polymerized acrylic acid films were deposited on Si wafer and KBr pellet by remote plasma-enhanced chemical vapor deposition (PECVD). Effects of plasma power, reaction pressure, indirect plasma method on the growth rate, chemical structure, and chemical bonding state of the films were investigated. Chemical structure and chemical state of the films were characterized by Fourier transformed infrared (FT-IR) spectroscopy and X-ray photoelectron spectroscopy (XPS) analysis and curve fitting technique. Growth rate of the film increased to a saturation value with plasma power of 100 W, but showed the maximum with reaction pressure at 300 mtorr. Whenever W/FM factor (applied energy per gas molecule) increased by increasing plasma power or lowering pressure, the fragmentation of acrylic acid molecules was promoted. From the XPS curve fitting analyses, we found that the intensity of carboxyl COO bonding peak decreased with W/FM factor, and the tendency of intensity change of carboxylic COO peak was contrary to those of ether C-O and carbonyl C=O peaks.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.188-194
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• 2024

This paper introduces an optimized oxygen (O₂) plasma surface treatment technique to enhance sphere lithography on hydrophobic photoresist surfaces. The focus is on semiconductor manufacturing, particularly the creation of finer structures beyond the capabilities of traditional photolithography. The key breakthrough is a method that makes substrate surfaces hydrophilic without altering photoresist patterns. This is achieved by meticulously controlling the O₂ plasma treatment duration. The result is the consistent formation of nano and microscale patterns across large areas. From an academic perspective, the study deepens our understanding of surface treatments in pattern formation. Industrially, it heralds significant progress in semiconductor and precision manufacturing sectors, promising enhanced capabilities and efficiency.

• Textile Coloration and Finishing
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• v.21 no.3
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• pp.19-25
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• 2009

Polymerization of tetraethoxysilane on a glass substrate was investigated by remote microwave plasma using argon with portions of nitrous oxide as carrier gas. Transparent layer like a thickness of 0.5 ${\mu}m$ 3 ${\mu}m$ were obtained, differing in chemical composition, depending on plasma power and treatment time as well as on ageing time. In general the milder the treatment and the shorter the ageing was, the higher was the content of organic structural elements in the layer. We have identified that the chemical structure of our samples composed of mainly Si O and Si C groups containing aliphatics, carbonyl groups. These results were obtained by X ray photon spectroscopy, Fourier transformed infrared spectroscopy, and scanning electron microscope combined with Energy dispersive X ray spectroscopy.

• Korean Membrane Journal
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• v.7 no.1
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• pp.19-27
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• 2005

PP hollow fiber membrane was hydrophilized by EVOH dip coating followed by low temperature plasma treatment and UV irradiation. EVOH coating attained high water flux without any prewetting but its stability did not guaranteed at high water permeation rate. At high water permeation rate, water flux declined gradually due to swelling and delamination of the EVOH coating layer causing pore blocking effect. However, plasma treatment reduces the swelling, which suppress delamination of the EVOH coating layer from PP support result in relieving the flux decline. Also, UV irradiation helped the crosslinking of the EVOH coating layer to enhance the performance at low water permeation rate. FT-IR and ESCA analyses reveal that EVOH dip coating performed homogeneously through not only membrane surface but also matrix. Thermogram of EVOH film modified plasma treatment and W irradiation show that crosslinking density of EVOH layer increased. Chemical modification by plasma treatment and UV irradiation stabilized the hydrophilic coating layer to increase the critical flux of the submerged membrane.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.277.1-277.1
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• 2009

• Environmental Engineering Research
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• v.24 no.3
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• pp.412-417
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• 2019

This paper presents the results of using cold plasma to treat surface water for domestic use purpose. Experimental results showed that cold plasma was an effective method for destroying bacteria in water. After treatment with cold plasma, concentration of coliform and Escherichia coli dramatically reduced. Besides, cold plasma significantly removed water odor, increased dissolved oxygen and decreased the concentration of chemical oxygen demand. However, cold plasma significantly raised the concentration of nitrite and nitrate. Other disadvantages of treating with cold plasma were conductivity increase and pH reduction. Pretreatment steps of coagulation, flocculation, sedimentation and sand filtration followed by disinfection with cold plasma exhibited a high efficiency in surface water treatment. All parameters of surface water after treatment by using the prototype satisfied with the allowance standard of domestic water quality.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• Korean Chemical Engineering Research
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• v.49 no.6
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• pp.835-839
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• 2011

The characteristics of torch-type atmospheric pressure plasma and its sterilization effects have been analyzed. The length of plasma flame was varied with the level of applied voltage and the mixture gases composed of argon and oxygen. The effect of plasma flame on the temperature increase of surface treated was limited to $43^{\circ}C$ as a maximum temperature under exposing time of 10 min. The sterilization for E. coli was strongly affected by the applied voltage, the oxygen ratio in the mixture gas and the treatment time. At a high concentration of ozone, the increase of treatment time under the direct contact with plasma flame yields to maximize the effect of the sterilization on E. coli.